RLZ 34 N Search Results

Contextual Info: K/Diodes RLZ J RLZ J Series Series y V =1 > 1 y 400mW 3È Œ' ; - K Silicon Epitaxial Planar 400mW Zener Leadless Diodes K * ^HK’+äsH /D im ensions Unit : mm • $ £ 1) /J 'S H * S 6 * < : / ? * $ (LL-34)„ 2) i l l • Features 1) Small surface mount type (LL-34).

rlz 34 n

Abstract: RLZ36B
Contextual Info: RLZ36B Diodes Zener diode RLZ36B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)

RLZ TE-11 7.5B

Abstract: RLZ33B rlz diode rohm rlz te -11-20A ll-34 diode
Contextual Info: RLZ33B Diodes Zener diode RLZ33B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)

RLZ TE-11 7.5B

Abstract: RLZ30B
Contextual Info: RLZ30B Diodes Zener diode RLZ30B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)

RLZ39B

Contextual Info: RLZ39B Diodes Zener diode RLZ39B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)

1SS134 ROHM

Abstract: ROHM 1SS292 1SS139
Contextual Info: $ < K /D io d es M 3 . -f y ^ > *7 $ - i $ — K /S w itc h in g Diodes • S & J f X 'f K /H ig h - S p e e d S w itching Diodes m Type B E S S IE Vr V i1 EE Cond. V f (V) Max. I f (mA) Package Page 1S2471 80 1.2 100 D O -35/S C -40 1187 1S2472 50 1.2 100

Contextual Info: FUJI SU 256K X 8 CMOS SRAM MODULE MB85403A-40 MB85W3A-50 T S 2 6 1 -A 8 8 Y N o v . 1988 CMOS 262,144 Words x 8-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 44-pin ceramic board.

17-18L

Contextual Info: 36 TO 9 BIFIFO IDT 7MB2002 FEATURES: DESCRIPTION: • First-in/Flrst-out memory module This module is a FIFO that has up to 8 IDT72041S 4K x 9 on board. The module is bidirectional with 4K x 36 transforming to 16K x 9 on one side and back to 4K x 36 on the other side. All logic nec­

Z8000

Abstract: z8000 manual
Contextual Info: Z8030/Z8530 SCC Serial Communications Controller DISTINCTIVE CHARACTERISTICS Tw o IM.bps full duplex serial channels Each channel has independent oscillator, baud-rate generator, and PLL fo r clock recovery, dram atically reducing external com ponents. Programmable protocols

1SR35-100

Abstract: 1SR139-100
Contextual Info: UJHOil VLU “ 4 - S 0 E f2 c S3” £,St<*t3s2>'£ ‘ T l^X D ^V —* C. tjLA —(\ : l o O o a o Q ;j ! i <; ' 1 ( . () () f; ;j •; : ) i'i () <i ( ) ( ) <) () { ) <> () { ; ( > Cj (; I ! o r •Q o o o siaioi-zn sauas r ZilOl 0Z~0ZZ±IAI 262SSI

Contextual Info: Q Q u a l it y S e m ic o n d u c t o r , I n c . Low Skew Clock Driver/ Buffer for Desktop PC w it h 4 DIM M S q s s s is advance INFORMATION FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS5818 is a high speed, low noise 1 - 1 8 non­

Contextual Info: !. f WS512K32-XCJC WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE p r e l im in a r y * FEATURES • A c c e s s T im e s o f 17, 2 0 , 2 5 , 3 5 a nd 4 5 n s ■ TTL C o m p a t ib l e In puts a nd C M O S O u tp u ts ■ 6 8 - l e a d , JLCC, P a c k a g e 701

Contextual Info: A N A LO G Four-Channel 12-Bit Sampling A/D Converter D E V IC E S _ for Digital Signal Processing □ _ADI334 1.1 Scope. This specification covers the detail requirements for a hybrid, 12-bit analog-to-digital converter including

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

455bk

Abstract: 80386 PD6600A U10454E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD63

Abstract: PD64 PD6600A UPD6600
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­

200H

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1S34

Contextual Info: S IE M E N S 3.3 V SDRAM Modules HYS 64Vx00 2 0G(C)D(L)-8/-10 144 pin SO-DIMM SDRAM Modules 32MB, 64MB & 128MB density • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC notebook applications • One bank 4M x 64, 8M x 64 and 16M x 64 non-parity module organization

26LS32 ic internal diagram

Abstract: 05393-001B AM26LS33PC 5962-7802001
Contextual Info: Am26LS32/Am26LS33 Advanced Micro Devices Quad Differential Line Receivers DISTINCTIVE CHARACTERISTICS • Input voltage range of 15 V differential or common mode on Am26LS33; 7 V (differential or common mode) on Am26LS32 ■ The Am26LS32 meets all the requirements of

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 68, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release function through key input, and programmable timer, the µPD67, 68, and 69 are ideal for infrared remote control

nn514405

Contextual Info: NN514405 / NN514405B series EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN514405/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405/B series is fabricated with advanced CMOS technology and de­

HOA4 Package

Abstract: HOA4 T 3512 H 67 diode 2b351
Contextual Info: 16-BIT 2:1 MUX/DEMUX SW ITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this

68b resistor code

Abstract: ASR10 PC10 PD6600A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD67B, 68B 4-BIT SINGLE-CHIP MICROCONTROLLERS FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 1.65 V low-voltage operation, carrier generator for infrared remote control transmission, standby release function through key input, and programmable timer, the µPD67B and 68B are ideal for infrared remote