514265 Search Results

hyb514265

Abstract: EDO RAM 514265
Contextual Info: 256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • EDO - Hyper Page Mode • Performance: • • Power Supply: HYB 514265BJ-400

MSM514265

Abstract: MSM514265CSL
Contextual Info: 514265C/CSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 514265C/CSL is a 262,144-word x 16-bit dynam ic R A M fabricated in O K I's C M O S silico n gate technology. The M SM 514265C/CSL achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple p o lysilico n sing le m etal C M O S. The M SM 514265C/CSL is

Contextual Info: SIEMENS 256K X 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information Power Supply: • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • EDO - Hyper Page Mode • Performance: HYB 514265BJ-400

514265

Contextual Info: O K I Sem iconductor_ M SM 514265B/BSL_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 514265B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 514265B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The 514265B/BSL is

MSM514265

Abstract: MSM514265BSL
Contextual Info: O K I Semiconductor_ 514265B/BSL_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 514265B/BSL is a 262,144-w ord x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The M SM 514265B/BSL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The M SM 514265B/BSL is

smd marking YB

Abstract: marking wl3 smd FAA 514265
Contextual Info: SIEMENS 256K X 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information Power Supply: • 262 144 words by 16-bit organization HYB 514265BJ-400 • 0 to 70 °C operating temperature HYB 514265BJ-40 • EDO - Hyper Page Mode

514265C

Abstract: m514265 m514265c MSM514265CSL 514265
Contextual Info: E2G0027-17-41 O K I Semiconductor Previous version: May 1997 M S M 514265C/CSL 262,144-Word x ~ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO D E S C R IP TIO N The 514265C/CSL is a 262,144-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate

SS-L70

Contextual Info: O K I Semiconductor MSM51 4 2 6 5 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE DESCRIPTION The M SM 514265B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514265B/BSL is OKI’s CMOS silicon gate process

256KX16

Abstract: HYB514265
Contextual Info: HYB 514265 BJ/BJL -40/-45/-50 256k x 16 - Bit EDO-Dynamic RAM INFORMATION NOTE High Speed 256kx16 DYNAMIC MEMORIES CHARACTERISATION DATA 3.97 INFOCD1.DOC This information note is intended to provide technical information on the SIEMENS 514265BJ/BJL high speed 256kx16 DYNAMIC ACCESS MEMORIES 16M

hyb514265

Abstract: 514265 WD55
Contextual Info: SIEMENS 256K X 1 6-Bit EDO-Dynamic RAM HYB 514265BJ-40Q/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information • 262 144 words by 16-bit organization Power Supply: • 0 to 70 °C operating temperature • EDO - Hyper Page Mode • Performance: HYB 514265BJ-400

NN514265

Abstract: nn514260 N092-FXX-00047 NN514260A 514265 EZ-34 tp NN514265A N092-FXX-00026
Contextual Info: NPN a 514265/ 514265A series EDO (Hyper Page) Mode CMOS 256Kx 16bit Dynamic RAM DESCRIPTION T he N N 514265/A series is a high perform ance C M OS D ynam ic Random A ccess M em ory organized as 262,144 w ords by 16 bits. The 514265/A series is fabricated w ith advanced C M OS technology and designed w ith innovative design

Contextual Info: 514265D Series HM51S4265D Series 262144-word x 16-bit Dynamic RAM HITACHI ADE-203-581A Z Rev. 1.0 Nov. 28, 1996 Description The Hitachi HM51(S)4265D Series is a CMOS dynamic RAM organized 262,144-word x 16-bit. HM51(S)4265D Series has realized higher density, higher performance and various functions by employing

CI 817a

Contextual Info: ADV601 Preliminary Data Sheet January 1996 For current information contact Analog Devices at 617 461-3881 APPLICATIONS FEATURES • • • • • • Precise Compressed Bit Rate Control • Field Independent Compression • Flexible Video Interface Supports All

Contextual Info: SIEMENS 256 K X 16-Bit EDO-Dynamic RAM 514265B J-400/40/-45/-50 HYB314265BJ L -45/-50 Preliminary Information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • EDO - Hyper Page Mode • Performance: • -400 -40 -45 -50

514265C

Contextual Info: 514265C Series Preliminary 2 6 2 ,1 4 4 -w o rd : 1 6 -b it D y n a m ic R a n d o m A c c e s s M e m o ry HITACHI The Hitachi H M 5 I 4 2 6 M ' is a C M O S dyn ami c R A M o r g a n i z e d 2 6 2 , 1 4 4 w or ds x 16 hits. HM 5 1426.‘> ’ has realized higher density, higher

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

Contextual Info: O K I Semiconductor 514265 B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE M ODE TYPE D ESC R IP T IO N The 514265B/BSL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the 514265B/BSL is OKI's CMOS silicon gate process

Contextual Info: O K I Semiconductor 514265B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE D ESC R IP T IO N T h e M SM 5 1 4 2 6 5 B/BSL is a n e w generation D yn am ic R A M org an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 4 2 6 5 B/BSL is O K I's C M O S silico n gate process

m514265

Contextual Info: 514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word x 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS process

str w 6554 a

Abstract: str 6554 STR 6456 str w 6554 str f 6456 str x 6456 BK2425-1320ALF str f 6554 NSH-03SB-S1-TG 12697
Contextual Info: Central Component Manufacturing - Cross Reference CCM PART # GCTJ-08-2-H-A1-BK-8-P1-S 22-11-2032 22-11-2042 22-11-2062 22-12-2024 22-12-2034 22-12-2034 22-12-2044 22-12-2104 30190 382811-5 39-30-1241 39-30-1241 41A-9-750 43045-0602 43045-0612 43045-0614 43045-0802

rt 4115

Abstract: 4072 1-331495-1
Contextual Info: AMP Specifications subject to change. For latest design specifications. Appendix E UG Number to AMP Number Cross Reference UG Part No. 21 21A AM P Part No. X 51692-2 1-227086-0 X X 1-227086-1 X 51692-1 X X 51692-2 1-227086-0 1 -2 270864 1-227086-1 X 225089-1

514265

Contextual Info: Ultralow Cost Video Codec ADV601LC a FEATURES 100% Bitstream Compatible w ith the ADV601 Precise Compressed Bit Rate Control Field Independent Compression 8-Bit Video Interface Supports CCIR-656 and M ultiplexed Philips Formats General Purpose 16- or 32-Bit Host Interface w ith

Contextual Info: O K I Semiconductor E 2 G 0 0 2 7 -1 7-41 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE M O DE TYPE WITH EDO DESCRIPTIO N The 514265C/CSL is a 262,144-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 514265C/CSL achieves high integration, high-speed operation, and