RL- 3208 A Search Results

Contextual Info: PANASONIC IN DL /E LE K 6 9 3 2 8 52 -CICJ 72 P A NASON IC D E ^ h^BcEASE! DODbMST S I N DL * E L E C T R O N I C 72 C -a»«,*.-.*0 -.-».»6 :4 5 9 . D MN3208 MN3208 2 0 4 8 g ffi;« E n - / -f X BBD 20 4 8 - S t a g e Lo w Voltage Operation, Low N o i s e B B D for Audio Sig na ls

Contextual Info: AVG Semiconductors DDi 1002 Technical Data DV74ALS1002A Quad 2-Input Positive-NOR Buffer N Suffix Plastic DIP AVG-001 Case This device contains four independent 2-input buffers, each of which performs the logic NOR function. • AVG’s ALS has guaranteed DC and AC specification over

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G S-LP3415ELT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ 3 Features Advanced trench process technology

Contextual Info: ACE2305B P-Channel Enhancement Mode Field Effect Transistor Description The ACE2305B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

2SA1645

Abstract: 2SA1645-Z DK4-H
Contextual Info: y ' j 3 > l*5>y7.$ / \ * 7 - Silicon Power Transistors 2 S A 1 6 4 5 , 2 S A 1 6 4 5 - Z iH ffl 2 S A 16 45ÌÌ, g iiL -X -f 7 T '=3 UC7^ - I ^ - y s x i s j < £ 3 K / n°7 - m m m a h 7 > y '7 2SA1645 CO D C -D C = i> /S -£ , / ’i, V U /< K > : mm d

AC05DGM

Abstract: 7544a AC05FGM AC05 nec 1SS50 ac05d AC05 SC-7544A H092
Contextual Info: NEC - t K U X 2 Thyristors AC05DGM,AC05FGM ô A Î-iU K T R IA C AC05 r J y ^ KWÆ FTRIACT", m < 0 i K L ¥ - ? * 7 * f f . î ± 4 0 0 V , 600 V X ' - f o & @h 10.5 MAX. tt OTO-220AB ' r - Z C D f z t b ' l ' i t m t T J b > , £ tzWM ') — FA* I E i c

2SA1845

Abstract: i301
Contextual Info: ~ r— $ y • — h / \ “7 - h - ÿ > v X ^ Silicon Power Transistor 2SA1845 P N P it 2SA1845&, £ / \ ° 7 - h 7 > v * $ ?16VcE sat ?‘h F E tf^ < 7 )T 'D C /D C = l > M L T S J iT 'f o «p « O 7 V 7 J 1 / 7 - t° > ^7 'i± t ïT ' é t A H ^ ^ ñ J ^ É o

nec 7815

Abstract: transistor NEC D 986 ic LC 7815 6111 WA NEC D 986 2SA1847 ic 7815 M/NEC 7815
Contextual Info: ~7~ — $ y • — h ÿ i j n > / \° 7 - S ilic o n P o w e r T r a n s is t o r 2SA1847 P N P X f $ * y T JU M y y ^ 2SA1847&, > h 7 > y ' X ^ h-7>v^^TföVcE(sat ThFE^' t'<7)TDC/DC=]>/\'U T U íS T -T o 7 i / T ) \ s T - £ > 7 m & T & t o n m * :ñ im t i: ''S v 'r - ;yr*¡ti>v, n £ i = i *

D1559

Abstract: 2SC4351 m027 TD-7509
Contextual Info: — y 3 1 • y — b # - ' J > b > n '7 Darlington Power Transistor 2SC4351 N P N lfc f^ + v r ^ y 2 S C 4 3 5 1 á , ït5 M ;M 7 W " - U > OA • F A ^ ^ í7 /^ X Í- ^ ^ 7 " 7 U =i> h 7 > v ^ i ' h > ^ 0,7 - F x ^ X ^ - C t o ÿ k X i - ^ W P W M ( # - U > h >JtíJí;

TH 2190 Transistor

Abstract: 2SC4815
Contextual Info: X — £ • y — h NEC V y = 3> / \ °7 - h 7 > P N X f c f 'J = i> V ÿ ' s y X Ç ¡É M U Z I N 7 > VX 9 Ti& VCE „ l t'hFE W Jv>ntDC/DC a 2SC4815IÌ, HjitX-i if# ;? -f- .2. J E — ^ (7) K ' 7 ' /f yS' t L T Îx iS ^ '^ o ft O h p E ^ Î Ê V cE (s a t)

GF-50

Contextual Info: f f ì HFA1130/883 H A R R IS S E M I C O N D U C T O R Output Clamping, 850MHz Current Feedback Amplifier J u ly 1994 Features Description • This Circuit Is Processed In Accordance to MIL-STD883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1.

2SC4552

Contextual Info: y ’ — • y — h - 1 > y U / \ ° 7 - Silicon Power Transistor 2SC4552 2SC 4552 i, isîÜ X 'f h 9 •/ y X ^ t'L o w VcE<sat T'hFE ^ ^ T ' ' D C / D C f-iX -^ c o L T A IÜ T -to ( M Ù l •’ mm) > n 10.0 + 0 .3 4.5 + 0.2 2.7 + 0.2 # m O hFE <( Î Ê VCE(sat) X ' " Ÿ o

2SC4813

Abstract: VDF pn C40r
Contextual Info: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è

2SA1843

Contextual Info: ~7~ — $ * V — h / \ °7 - h 7 > v 'x $ Silicon Power Transistor 2SA1843 P N P x e ^ v T ^ U ^ v y = i> / \ °7 - - h 7 > ÿ x ^ iS 3 S j* ^ - r i i f f l 2S A 1843là, ¡Ü itX - f b t f à f t Z f t t z / W - h ÿ > y ' Z $ T fé V cE sat ThFE#¡gi,'<7)T D C /D C = i > A A t L T Ä iS T '- t o

ic 4081 datasheet

Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
Contextual Info: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

data sw 3205

Contextual Info: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2SC4553

Abstract: transistor t 2190 TD-7637
Contextual Info: x — £ • y — h v U = i > / \ ° 7 - Silicon Power Transistor 2SC4553 N P N X t f ^ ^ v 7 7; U v U = I > h 7 > ÿ x ^ Ü 5lJ f X 2SC4553 là, ^ W ? S'° 7 £ - hÿ > ÌS x ? T\ ± 't fz hFE # < 4*1 Xi T O : mm) x ^ 'y f- > ^ £ lÈ Îl^ T'Itx. £ -to

ic7660

Abstract: tl o71 7660s LMC7660 LM35 DC converter 7660 lcm7660 LMC7660IN LMC7660MJ LMC7660S
Contextual Info: LMC7660 N a t i o n a l S e m i c o n d u c t o r LMC7660 Switched Capacitor Voltage Converter General Description Features The LMC7660 is a CMOS voltage converter capable of converting a positive voltage in the range of + 1 .5V to + 1 0V to the corresponding negative voltage of -1 .5 V to -1 0 V . The

741 IC

Abstract: PC151C PC741C 741G2 PC251 nec 741c PC741G nec pc741c PC151 ic 741
Contextual Info: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuits µPC151,741 汎用演算増幅回路 PC151, 741は高安定度の演算増幅回路で，入力電圧範囲が広く，位相補正回路を必要としません。出力の短絡保

2SA1069

Abstract: 2SA1069A MP-25 1069A mh 3212
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SA1069, 1069A PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 工業用 ★ 2SA1069,1069A は，高速度スイッチング用として開発された

mp7696

Contextual Info: MP7696 CMOS Very Low Power, 9-Bit Analog-to-Digital Converter M Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • Sampling Rates from 1 kHz to 2 MHz DNL better than 1/2 LSB typ up to 1 MHz Very Low Power CMOS - 30 mW (typ)

2SC2334

Abstract: 2SA1010 MP-25
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC2334 NPN エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 工業用 ★ 2SC2334 は，高速度スイッチング用として開発されたモールド

2SC2335

Abstract: transistor2sC2335 MP-25 2sc233 2sc2335 transistor
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC2335 NPN 三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 工業用 ★ 2SC2335 は，高速度高耐圧スイッチング用として開発された

G2JS

Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
Contextual Info: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7