RJP3 Search Results

TO-220FL

Contextual Info: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

rjp30

Abstract: RJP30E
Contextual Info: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

Contextual Info: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

RJP30h1

Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching
Contextual Info: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.

RJP30E3

Abstract: rjp30e3dpk RJP30e
Contextual Info: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

RJP30E3

Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30
Contextual Info: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

RJP30K3

Abstract: RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30
Contextual Info: Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage VCE(sat) = 1.1V typ

RJP30H1DPD

Abstract: rjp30h1 rjp30 rjp30H
Contextual Info: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.

PRSS0003AF-A

Abstract: RJP30H1 rjp30H
Contextual Info: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.

rjp30h1

Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30
Contextual Info: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.

rjp30e2

Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200
Contextual Info: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ

rjp30e2

Contextual Info: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ

Contextual Info: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

RJP30E2

Contextual Info: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ

Contextual Info: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ

RJP30E3

Contextual Info: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

Contextual Info: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ

RJP30H2

Abstract: rjp30h RJP30H2D RJP30H2dpk R07DS0467EJ0200 Rjp30
Contextual Info: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

rjp30e2

Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
Contextual Info: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

transistor RJp 30

Abstract: RJP3 transistor RJp 2Ghz mixer
Contextual Info: Tem ic U 2795 B-FP TELEFUNKEN Semiconductors 2-GHz Double Balanced Mixer Description U 2795 B is a 2-GHz mixer for R F telecom munications equipm ent, e.g. D E C T and PCN, built with T E L E FU N K E N ’s advanced bipolar technology. A double balanced approach was chosen to assure

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance