RITL Search Results

Contextual Info: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

Contextual Info: w # S G S -T H O M S O N M28010 V # « RitlD M li[Lli©inS lii!lD©i 1 Mbit 128Kb x 8) Parallel EEPROM with Software Data Protection PRODUCT PREVIEW FAST ACCESS TIME: 100ns 2.7V to 3.6V SINGLE SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST W RITE CYCLE: - 128 Bytes Page Write Operation

Contextual Info: r = 7 S G S 'T H O M S O N * 7 / . RitlD 13 lilLIOT(S iD(gi TDA7343 DIGITALLY CONTROLLED AUDIO PROCESSOR PRODUCT PREVIEW • INPUT MULTIPLEXER - TWO STEREO AND ONE MONO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTATION TO DIFFERENT SOURCES ■ FULLY PROGRAMMABLE

M48T18

Abstract: M48T06 DS1643 M48T08 SOH28 st 9431 ST M48T18
Contextual Info: w , SGS-THOMSON M 48T08 M 48T 18 k7 # » RitlDÊlM IlilLIKËinSM QtÊS 6 4 K 8 K x 8 TIMEKEEPER INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,

M48Z2M1

Abstract: M48Z2M1Y
Contextual Info: w , M48Z2M1 M 48Z 2M 1Y S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 16 Mb 2Mb X 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

M48T58

Abstract: M48T58Y M4T28-BR12SH1 SOH28
Contextual Info: M48T58 M48T58Y w , S G S -T H O M S O N k7 # » RitlDÊlM IlilLIKËinSM QtÊS 6 4 K 8 K x 8 TIMEKEEPER • INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,

1N914

Abstract: M29F002T PDIP32 PLCC32
Contextual Info: w , SGS-THOMSON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical

1N914

Abstract: M29F002T PDIP32 PLCC32
Contextual Info: w , SGS-THOMSON M 29F002T k7 #» RitlDÊlMIlilLIKËinSMQtÊS 2 Mb 256K x 8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical

CENTURY MICROELECTRONICS

Abstract: REAL TIME CLOCKCHIPS 1N5817 M48T37V M48T37Y M4T28-BR12SH1 SOH44 YEAR2000
Contextual Info: w , SGS-THOM SON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 48T37Y M 48T37V 3.3V-5V 256Kb 32K x 8 TIM EKEEPER SRAM PR ELIM IN A R Y DATA • INTEGRATED ULTRA-LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ FREQUENCY TEST OUTPUT for R EALTIM E

Contextual Info: SPECIFICATION CONTROL DRAWING TWO CONDUCTOR CABLE, UNSHIELDED, UNJACKETED, 600 VOLT, FLEXIBLE riTLE 82A0822 Revision 07-30-02 This specification sheet forms a part of the latest issue of Raychem Specification 80. COMPONENTWIRES-82A0812 CABLE CONSTRUCTION DETAILS

BUH3150

Abstract: BUH315D TRANSISTOR L 287 A
Contextual Info: S C S -T H O M S O N RitlQOlOilLiOfiOiQOi BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE #E81734 (N . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.

Contextual Info: w # S G S -T H O M S O N M27V405 V # « RitlD M li[Lli©inS lii!lD©i LOW VOLTAGE 4 Megabit 512K x 8) OTP EPROM NOT FOR NEW DESIGN • PIN COMPATIBLE with the 4 MEGABIT, SINGLE VOLTAGE FLASH MEMORY ■ LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns

M29F100

Abstract: M29F100B M29F100T
Contextual Info: w , SGS-THOMSON M 29F100T M 29F100B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME

TA152

Abstract: M49T59 AN923 M48T59 M48T59Y M4T28-BR12SH1 M48T59Y equivalent Technical Article TA152
Contextual Info: M49T59 M48T59Y w , S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 6 4 K 8 K x 8 TIMEKEEPER • INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ FREQUENCY TEST OUTPUT for REALTIM E CLOCK ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

AN404

Abstract: M24C32 M24C32-R M24C32-W M24C64 M24C64-R M24C64-W
Contextual Info: w , M 24C 64 M 24C 32 S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 64K 8K x 8 AND 32K (4K x 8) l2C BUS EEPROM P R E L IM IN A R Y D A TA COMPATIBLE with l2C EXTENDED ADDRESSING TW O WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER

AN404

Abstract: ST24 ST24E64 ST25 ST25E64
Contextual Info: ST24E64 S T25E 64 w , S G S -T H O M S O N k7 # » RitlDÊlM IlilLIKËinSM QtÊS SERIAL EXTENDED ADDRESSING COMPATIBLE WITH l2C BUS 64K 8K x 8 EEPROM P R E L IM IN A R Y D A TA COMPATIBLE with l2C EXTENDED ADDRESSING TW O WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL

M24C32

Abstract: s08b M24C32-R M24C32-W M24C64 M24C64-R M24C64-W MRR5
Contextual Info: w , SGS-THOMSON M 24C 64 M 24C 32 k7 #» RitlDÊlMIlilLIKËinSMQtÊS 64K/32K SERIAL l2C BUS EEPROM P R E L IM IN A R Y D A TA COMPATIBLE with l2C EXTENDED ADDRESSING TW O WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION

Contextual Info: DWG. NO. DO NOT SC A LE DRAWING SD-51227- 002 EC NO. DRWN: CH'K: APPR: § uln —1 px> EC NO. DRWN: CH'Ks APPR: . “m i l H-lu rl 3F1 3EF1 3E 3B p ritl EC NO. DRWN: CH'Ks APPR: EC NO. DRWN: CH'Ks APPR: R ELEA SED W06/2I EC NO. JC 200 I- 1002 DRWN: H.II CH'Ks T.YAMAGUCHI

Contextual Info: Complete black wideband V H F 1/ 4 wave and LA Black LM coil only or 14 4 -1 7 4 M H z mounting kit Coil and chrome whip for LM mounts, 14 4 -1 7 4 M H z ? iiinnt! (RiTlfMrv UWBQB 150-170 W z M H50BC0 144-174 GAIN Unity G A IK TYPE Wideband 1 / 4 wave TYPE

Contextual Info: w# SGS-THOMSON M27V801 V # « RitlD M li[Lli©inS lii!lD©i LOW VOLTAGE 8 Megabit 1Meg x 8) UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER “CMOS” CONSUMPTION: - Active Current 35mA

Contextual Info: Æ 7 M54/74HC373/573 M54/74HC533/563 S G S -T H O M S O N RitlD g^(Q [lLi irK©RilO©Ì OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT HC373/573 NON INVERTING, HC533/563 INVERTING • HIGH SPEED tPD = 15 ns (TYP.) at VGc = 5V ■ LOW POWER DISSIPATION lcc = 4 pA (MAX.) at Ta = 25°C

M48Z512

Abstract: M48Z512A M48Z512AY
Contextual Info: M 48Z512A M 48Z512AY w , S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 4 Mb 512K x 8 ZER O PO W ER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the

M48Z512

Contextual Info: M 48Z512 M 48Z512Y w , S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 4 Mb 512K x 8 ZER O PO W ER SRAM N O T F O R N E W D E S IG N INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

7MBR30SA060E-01

Abstract: 100C
Contextual Info: the express w ritle n third p a rty , nor used co n s e n t of Fuji Electric C o . L td for the m a n u fa c tu ré '.: purpo ses w it h o u 1. This m a ie c id l and the info rm a tion herein is the p ro p e rty ol Fuji Electric Co Lui T >iey sh;ill be neither reproduced c o p ie d