RIP SOT Search Results

Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5

portable mp3 mp4 player

Abstract: 40T85
Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra Fast Hig gh PSRR N CMOS Voltag ge Regulattor Low Noise „ IN NTRODUC CTION „ FEATU URE Th he LR6200 Series arre a group of positive e voltage re egulators ma anufactured by CMOS on, rejectio with high rip pple noise, low pow

mb 428 ic data

Contextual Info: POliJEREX INC m N B ΠT-25-19 C390 X Powerex, Inc. Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR 450 Amperes Avg 500-1300 Volts D e s c rip tio n

Contextual Info: Two-Way 0° Power Splitter Combiner 1.71-1.99 GHz ESAlpha PD18-73 F eat ur e s • Low Cost ■ Low Profile ■ Available in Small SOT-6 Lead Package ■ Tape & Reel D e s c rip ti o n The PD18-73 is a monolithic two-way in-phase hybrid junction tuned for the 1.71-1.99 GHz band. It offers low

NDT451AN

Abstract: u1130
Contextual Info: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,

Contextual Info: Two-Way 0° Power Splitter Combiner 1.42-1.66 GHz ESAlpha PD15-73 F eat ur e s • Low Cost ■ Low Profile ■ Available in Small SOT-6 Lead Package ■ Tape & Reel D e s c rip ti o n The PD15-73 is a monolithic two-way in-phase hybrid junction tuned for the 1.42-1.66 GHz band. It offers low

mosfet pal 007

Abstract: 47UF TS9007 mps lo1
Contextual Info: T A IW A N TS9007 $ SEMICONDUCTOR pb RoHS 300mA Low Noise CMOS LDO CO M PLIANCE SOT-25 5 4 Pin D efinition: SOT-23 1. G round 1. Input 2. G round 1 23 Pin D efinition: 3. Enable 4. Bypass # 1 2. Output 3. Input 2 5. O utpu t G e n e ral D e s c rip tio n

Contextual Info: Two-Way 0° Power Splitter Combiner 0.81-0.96 GHz ESAlpha PD09-73 F eat ur e s • Low Cost ■ Low Profile ■ Available in Small SOT-6 Lead Package ■ Tape & Reel D e s c rip ti o n The PD09-73 is a monolithic two-way in-phase hybrid junction tuned for the 0.81-0.96 GHz band. It offers low

Contextual Info: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

diode 1BL

Abstract: NDS356P
Contextual Info: March 1996 Na t i o n a l Semiconductor ” NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor F eatu re s • -1.1 A, -20V. RDS 0N1 = 0.3Q @ VGS = -4.5V. G en eral D e sc rip tio n These P-Channe! logic level enhancement mode power field effect transistors are produced using

12149

Abstract: Diode SMD ED 98
Contextual Info: Preliminary Data Sheet 12149 03/98 Series 10ETF.S International lö R Rectifier q u ie t ir FAST SOFT RECOVERY RECTIFIER DIODE VF < 1,33V @ 10A t rr = 80ns VRRM 1000 to 1200V D e s c rip tio n /F e a tu re s T h e 1 0 E T F .S fa st soft recovery QUIETIR rectifier

Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MC54/74HC27 T rip le 3 -In p u t N O R G a te High-Performance Silicon-Gate C M O S J SUFFIX CERAMIC CASE 632-08 The MC54/74HC27 is identical in pinout to the LS27. The device inputs are com­ patible with standard C M O S outputs; with pullup resistors, they are compatible with

Contextual Info: 374 9 7 6 2 T S 7 m U M IC R O E LEC T R O N IC S TWsTtW^El^rlToIlCS T8C 03599^ 7 8 “' ^ | 37M17b2 QQ03S11 8 | F U J IT S U MOS M em o ries B M B 8 3 1 1 2 4-3 5 1M-BIT 131,072x8 CMOS Read Only Memory D e s c rip tio n The Fujitsu MB831124 is a CMOS Si*gate mask-programmable

IC7111

Contextual Info: 2.4V IttyBitty Rail-to-Rail Input/Output Op Amp Advance Information G e n e r a l D e s c rip tio n F e a tu re s T h e M IC 7 1 11 is a micropower operational am plifierfeaturing rail-lo-rail input and output perform ance in M icrel’s IttyBitty™ S O T 2 3 -5 package. T h e M IC 7 1 11 is ideal for systems w here

Contextual Info: Semiconductor, Inc. TC828A SWITCHED CAPACITOR VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC828A is a CMOS “charge-pump” voltage con­ verter in an ultra-small SOT-23A-5 package. It can invert and/or double an input voltage that can range from +1,8V to

SOT-6 1C

Contextual Info: GaAs 1C 75 Q Non-Reflective SPDT Switch 0.5-2 GHz ESAlpha AS163-73 F eat ur e s • 75 Q Impedance SOT-6 0.074 1.90 mm REF. r i p'Na^ n n ■ Positive Control Voltage ■ Non-Reflective 0.126 (3.20 mm) 0.087 (2.20 mm) 0.071 (1.80 mm) ■0.052 (1.30 mm) PIN 1

Contextual Info: GaAs 1C Positive Control Non-Reflective SPDT Switch 0.5-2 GHz ESAlpha AS171-73 F eat ur e s • Positive Control Voltage SOT-6 0.074 1.90 mm REF. r i p'Na^ n n ■ Non-Reflective ■ Low DC Power Consumption 0.126 (3.20 mm) 0.087 (2.20 mm) 0.071 (1.80 mm)

Contextual Info: GaAs 1C SPDT Reflective Switch Positive Control DC-2 GHz EHAlpha AS170-92 F eat ur e s • Low Insertion Loss SC70-6 0.079 2.00 mm — ► ± 0.008 (0.20 mm) ■ Positive Control Voltage n ■ Low DC Power Consumption 0.087 (2.20 mm) ± 0.008 (0.20 mm) ■ Low Cost Mini SOT-6 Plastic Package

Contextual Info: ESAlpha DC/DC Converter AM100-73 F eat ur e s • Converts a Positive Voltage Into a Negative Voltage SOT-6 0 .0 7 4 r .-an 1 .9 0 m m R E F . i 1 PIN 6 - ■ Ideal for Providing Gate Voltage Bias for GaAs Products <- 0 .1 2 6 (3 .2 0 m m ) 0 .0 8 7 (2 .2 0 m m )

SOT-6 1C

Contextual Info: GaAs 1C SPST Switch Single Positive Control 0.5-2.5 GHz ESAlpha AS156-73 F eat ur e s • Single Positive Control Voltage SOT-6 0.074 1.90 mm REF. r i p'Na^ n n ■ +3 V to +5 V Operation ■ Isolation Can be Tuned to Desired Frequency 0.126 (3.20 mm) 0.087 (2.20 mm)

19 FF J1J

Contextual Info: GaAs 1C SPST Switch Single Positive Control 0.5-2.5 GHz ESAlpha AS156-73 F eat ur e s • Single Positive Control Voltage SOT-6 0.074 1.90 mm REF. r i p'Na^ n n ■ +3 V to +5 V Operation ■ Isolation Can be Tuned to Desired Frequency 0.126 (3.20 mm) 0.087 (2.20 mm)

Contextual Info: ESAlpha GaAs IC Transfer Switch DC-2 GHz AS152-73 F eat ur e s • High Linearity +45 dBm IP3 @ 0.9 GHz SOT-6 0.074 (1.90 mm REF.) r .-an ■ Ultra-Miniature SOT-6 Package I 0.126 (3.20 mm) 0.087 (2.20 mm] PIN 6 - ■ Low Insertion Loss (0.4 dB @ 0.9 GHz)

Contextual Info: GaAs 1C SPDT Reflective Switch Positive Control DC-2.5 GHz ESAlpha AS157-73 F eat ur e s • Low Insertion Loss 0.4 dB @ 0.9 GHz SOT-6 0.074 (1.90 mm REF.) ■ Complementary Positive Control Voltages (0/+3 V to 0/+5 V) i 0.126 (3.20 mm) 0.087 (2.20 mm) s—Hi n

Contextual Info: PHEMT GaAs 1C High Linearity Positive Control SPDT Switch DC-2 GHz EBAlpha AS178-73 F eat ur e s • High Linearity 55 dBm IP3 @ 0.9 GHz SOT-6 0.074 (1.90 mm REF.) ■ Low Insertion Loss (0.35 dB @ 0.9 GHz) r i 0.126 (3.20 mm) 0.087 (2.20 mm] PIN 6 - ■ Isolation (21 dB @ 0.9 GHz)