RIP SOT Search Results
RIP SOT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MKZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-23 | Datasheet | ||
| MSZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-346 | Datasheet | ||
| MKZ24V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 24 V, SOT-23 | Datasheet | ||
| MSZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-346 | Datasheet | ||
| MKZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-23 | Datasheet |
RIP SOT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SC28L198
Abstract: circuit diagram of rf transmitter and receiver 100-PIN 84-PIN SC28L198A1A SC28L198A1BE
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sc28l198circuit diagram of rf transmitter and receiver100-pin84-pin+2 | |
SC28L198
Abstract: circuit diagram of rf transmitter and receiver grd 07-15 100-PIN 84-PIN SC28L198A1A SC28L198A1BE SC28C198
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sc28l198circuit diagram of rf transmitter and receivergrd 07-15100-pin+4 | |
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Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5 |
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v66100-m692-x-1fle35tids0235hds | |
MAX735
Abstract: MAX736 MAX737 MAX739 MAX755 MAX759 407K MAX735cpa
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max735max755200mamax735/max755+6 | |
MAX735cpaContextual Info: -5 V/Adjustable, N egative-O utput, Inverting, Current-Mode PWM Regulators D e s c rip tio n _ F e a tu re s ♦ Converts +2.7V to +9V Input to Adjustable Negative Output MAX755 ♦ Converts -f4.0V to +6.2V Input to -5V Output (MAX735) |
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max755max73510fia160khz+2 | |
portable mp3 mp4 player
Abstract: 40T85
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lr6200portable mp3 mp4 player40t85 | |
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Contextual Info: GTO PSZAA Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 GutS-TUffl-Off Thyristor POW-R-BRIK 2000 Amperes/2500 Volts GTO (P5ZAA) Gate-Tlirn-Off Thyristor POW-R-BRIK™ 2000 Amperes/2500 Volts D e s c rip tio n : ,5y |
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amperes/2500mil-a-8625max/10 | |
mb 428 ic dataContextual Info: POliJEREX INC m N B Œ T-25-19 C390 X Powerex, Inc. Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR 450 Amperes Avg 500-1300 Volts D e s c rip tio n |
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t-25-19bp107max/10mb 428 ic data | |
a70 8 pin icContextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode |
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upd42s16405lupd4216405ljipd42s16405l4216406l+6 | |
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Contextual Info: Two-Way 0° Power Splitter Combiner 1.71-1.99 GHz ESAlpha PD18-73 F eat ur e s • Low Cost ■ Low Profile ■ Available in Small SOT-6 Lead Package ■ Tape & Reel D e s c rip ti o n The PD18-73 is a monolithic two-way in-phase hybrid junction tuned for the 1.71-1.99 GHz band. It offers low |
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pd18-733/99a | |
NDT451AN
Abstract: u1130
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ndt451anot-223bsq1130u1130 | |
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Contextual Info: Two-Way 0° Power Splitter Combiner 1.42-1.66 GHz ESAlpha PD15-73 F eat ur e s • Low Cost ■ Low Profile ■ Available in Small SOT-6 Lead Package ■ Tape & Reel D e s c rip ti o n The PD15-73 is a monolithic two-way in-phase hybrid junction tuned for the 1.42-1.66 GHz band. It offers low |
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pd15-733/99a | |
mosfet pal 007
Abstract: 47UF TS9007 mps lo1
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ts9007300maot-25ot-23+5 | |
ALP 102 modulator
Abstract: voltage compare tor lm324 simple LM324 COMPARATOR CIRCUIT sot-23 bja gj hall effect marking a hA packages SC70-5 03LG sot23-5 marking ha a13 marking sot235 lmv 358
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lmv321/358/324lmv321lmv358lmv324+12 | |
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Contextual Info: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS |
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MAX7239
Abstract: I2708 MAX7231 i 2708
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max7231/32/33/34max7231max7232max7233+7 | |
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Contextual Info: RF3305 MICRO-DEVICES BROADBAND HIGH LINEARITY AMPLIFIER T y p ic a l A p p lic a tio n s WLL, W-CDMA Systems • Cellular and PCS Systems Final PA for Low-Power Applications GENERAL PURPOSE AMPLIFIERS • Basestation Applications P ro d u c t D e s c rip tio n |
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rf3305300mhz900mhz-10dbm+1 | |
diode 1BL
Abstract: NDS356P
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nds356pbs01130diode 1bl | |
AD5820
Abstract: TDA7256 15 pin
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opa655xpopa655p12-bit10-bit+8 | |
156 35vContextual Info: RF236Ï~| MICRO •DEVICES 3 V LOW NOISE AM PLIFIER/ 3 V PA DRIVER AMPLIFIER • TDMA/CDMA/FM Cellular PCS LNA General Purpose Amplification • Low Noise Transmit Driver Amplifier Commercial and Consumer Systems P ro d u c t D e s c rip tio n The RF2361 is a low noise amplifier with a very high |
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rf236rf23611880mhz156 35v | |
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Contextual Info: RF2362 1 MICRO-DEVICES PCS CDMA/TDMA 3 V PA DRIVER AM PLIFIER T y p ic a l A p p lic a tio n s • TDMA/CDMA/FM PCS Tx Amplifier General Purpose Amplification • Low Noise Transmit Driver Amplifier Commercial and Consumer Systems P ro d u c t D e s c rip tio n |
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rf2362 | |
12149
Abstract: Diode SMD ED 98
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10etf12149diode smd ed 98 | |
en20vContextual Info: j MICRO-DEVICES RF2363~ DUAL-BAND 3 V LOW NOISE AMPLIFIER T y p ic a l A p p lic a tio n s • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems GENERAL PURPOSE AMPLIFIERS • GSM/DCS Dual-Band Handsets P ro d u c t D e s c rip tio n |
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rf2363gsm/1850mhz900mhz1900mhz+2 | |
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Contextual Info: RF2368 I MICRO DEVICES DCS/PCS 2 .7 V LOW NOISE A M PLIFIER T y p ic a l A p p lic a tio n s General Purpose Amplification • PCS Handsets Commercial and Consumer Systems GENERAL PURPOSE AMPLIFIERS • DCS Handsets P ro d u c t D e s c rip tio n The RF2368 is a DCS/PCS low noise amplifier with |
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rf2368dcs1800/pcs19001850mhz1960mhz | |