CSA408
Abstract: CSH640 CTH640
Contextual Info: TO-220 Maximum Ratings DEVICE VDRM BGK. IT HUS it m VCRH Electrical Characteristics « IGR ISM lOuSmax PG(AV) 20mSmax IDRM O R G K .IK O tm s VT t (Ta=25°C, Uniass Otharwisa Spacifiad) IT VT(TO) rT 1ST VD VGT VD VD IH • RGK-IKOhms II 0 RGK*1K0hms IKOhms
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CSA408
Abstract: CSH640 CTH640
Contextual Info: TO-220 SC R AND TRIACS I ru Maximum Ratings UJ □a UJ Ll I DEVICE VDRM RGK= IT RMS IT(AV) VGRM (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics IGR IGM lOuSmax PG(AV) 20 mS max IDRM 0 RGK=1K0hms VT 0 IT VT(TO) rT 6 IGT VD VGT 0 VD VD IH
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Contextual Info: 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200 300 TF341S 400 500 Type No. Electric Characteristics Mean On-state
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tf541s-atf561s-atf321mtf341m+6tf361mtf521mtf541mtf561mtf821mtf841m
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rgk 20
Abstract: rgk 20/1 rgk 66 rgk 30 rgk 20/2 Scans-048 RGK20 DSAGER00039
Contextual Info: Vergleichstabelle verschiedener Relaistypen und -arten Typ Erregerspannung [V] Leistungsaufnahme [W] maximale Schaltspannung [V] Schutzgaskontaktrelais 11GK 20 UGK 30 RGK 66 4; 6; 12; 18; 24 «0,18* «0,35* 2; 4; 6; 18 . 24 «0,25* «0,35* 12; 48; 60 110 150 ~
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2N2329
Abstract: 2N2327 2N2328
Contextual Info: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings
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CR100-6
Abstract: 125OC MMBT-CR100-6
Contextual Info: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)
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VOLTAGE-60
Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)
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TF541M
Abstract: TF561S-A TF861S TM1661S-L TM1261S-L TM861s tf521s TF541M DATASHEET tm361s tfd312s-o
Contextual Info: 4 Thyristors 4-1. Thyristors 4-2. Triacs 4-3. PNPN Switch 31 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200
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tf341stf541mtf561s-atf861s+7tm1661s-ltm1261s-ltm861stf521stf541m datasheettm361stfd312s-o
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TF561S
Abstract: TF541S
Contextual Info: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave
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Contextual Info: DIGITRON SEMICONDUCTORS BR103 SILICON PLANAR THYRISTOR Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = -40 to +125°C, RGK = 1000 Ω)
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MMBT-CR100-6
Abstract: 125OC
Contextual Info: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)
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XL1225
Abstract: XL1225 equivalent XL1225 transistor XL1225 TO-92
Contextual Info: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Symbol Repetitive Peak Off-State Voltage VDRM (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Value 380 Unit Volts
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XL1225
Abstract: XL1225 equivalent XL1225 TO-92 XL1225 transistor IT08A
Contextual Info: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Repetitive Peak Off-State Voltage (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Symbol VDRM Value 380 Unit Volts
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MCR100
Abstract: MCR100-8 Honey Technology transistor mcr100-6 MCR100-7 MCR100-3 MCR100-4 MCR100-5 MCR100-6
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM
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MCR100-7
Abstract: MCR100-8 MCR100-3 MCR100-4 MCR100-5 MCR100-6 mcr100
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM
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2N2325
Abstract: 2N2324 2N2326 2N2322 2N2323
Contextual Info: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)
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TK-212
Abstract: tk3160 TK1406V TK2140 TK3120 TK1401 TK1402 TK1414 TK2120 tk2160
Contextual Info: Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings >TSM vdw m TY PE S 'o vrw m V rsM 10ms Vq t 'g t Ih RGK = oo V TM ,amb = 25°C <RM@ V DWM v rw m (A) 140 A eff (rms) TK1401 TK1402 TK1404 TK1406 TK1408 TK1410
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XL1225
Abstract: XL1225 transistor XL1225 equivalent XL1225 TO-92 marking code 724 g 1225XX IT08A
Contextual Info: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Symbol Repetitive Peak Off-State Voltage VDRM (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Value 380 Unit Volts
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xl1225xl1225 transistorxl1225 equivalentxl1225 to-92+3marking code 724 g1225xxit08a
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MCR100-8
Abstract: mcr100 MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM
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Contextual Info: POSflRONIC INDUSTRIES BELEVES THE DATA ON TH 6 DM W M 6 TO K RELIABLE, SM C E THE TECHNICAL INFORMATON IS GIVEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H IS OWN D6CREIW N AND RGK. POSITROMC M D U SIR ES ASSUMES NO R E SP O N SIB L E FOR RESULTS OBTAINED OR DAMAGES
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LP 1610
Abstract: CTH6 SCR 25a CSA408 CSH640 CTH640 1k ohms
Contextual Info: This TO-220 Material SCR AND TRIACS Copyrighted ru u LP UJ 111 _0 -C Maximum Ratings DEVICE VDRU IT RMS IT(»V) VGBM Electrical Characteristics ISR RGK= IDRM IGU PG|AV) lOuSm ax 20m Sm ax VT 6 (Ta=25°C, U nless Otherwise Specified) IT VT(T0) rT VGT IGT 0 VD
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Contextual Info: SANKEN ELECTRIC CO L T » 3 I THYRISTORS, 0000548 b E3SAKJ T-zs-»s T H Y R IS T O R S T - 4 * 3 - 2 3 Insulation withhold voltage Maximum ratings Surge ON current Tj=T]m in~Tjm ax RGK=1kn 50Hz half sine wave Continuous power application 50Hz half sine wave
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cb 237
Abstract: 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j
Contextual Info: « pack 931» diode/thyristor 12 Amp m o d u les d io d e/th y risto r « p a c k 931 »12 A m p V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn O V RRM I r p e r leg @ p a r bras VR >GT RGK - 1 k n 125 °C V (A) (m A) (UA) (m A ) 50 100 200
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Contextual Info: p o s t r o m c m d u s t r ie s b e l e v e s t h e d a ta o n t h b DftMVMG TO BE RELIABLE. SM CE THE TECH M M L INFORMATION B GIVEN FREE O F CHARGE, THE USER EMPLOYS SUCH INFORMATION AT H E OWN 06CRED0N AND RGK. POSffROMC M DUSTRES ASSUM ES NO R E SP O N SIB L E FOR RESULTS OBTAINED OR DAMAGES
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