RGK 20 Search Results

Contextual Info: 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200 300 TF341S 400 500 Type No. Electric Characteristics Mean On-state

rgk 20

Abstract: rgk 20/1 rgk 66 rgk 30 rgk 20/2 Scans-048 RGK20 DSAGER00039
Contextual Info: Vergleichstabelle verschiedener Relaistypen und -arten Typ Erregerspannung [V] Leistungsaufnahme [W] maximale Schaltspannung [V] Schutzgaskontaktrelais 11GK 20 UGK 30 RGK 66 4; 6; 12; 18; 24 «0,18* «0,35* 2; 4; 6; 18 . 24 «0,25* «0,35* 12; 48; 60 110 150 ~

TF541M

Abstract: TF561S-A TF861S TM1661S-L TM1261S-L TM861s tf521s TF541M DATASHEET tm361s tfd312s-o
Contextual Info: 4 Thyristors 4-1. Thyristors 4-2. Triacs 4-3. PNPN Switch 31 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200

2N2329

Abstract: 2N2327 2N2328
Contextual Info: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings

CR100-6

Abstract: 125OC MMBT-CR100-6
Contextual Info: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)

VOLTAGE-60

Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)

TF561S

Abstract: TF541S
Contextual Info: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave

Contextual Info: DIGITRON SEMICONDUCTORS BR103 SILICON PLANAR THYRISTOR Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = -40 to +125°C, RGK = 1000 Ω)

MMBT-CR100-6

Abstract: 125OC
Contextual Info: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)

XL1225

Abstract: XL1225 equivalent XL1225 transistor XL1225 TO-92
Contextual Info: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Symbol Repetitive Peak Off-State Voltage VDRM (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Value 380 Unit Volts

XL1225

Abstract: XL1225 equivalent XL1225 TO-92 XL1225 transistor IT08A
Contextual Info: ST XL1225 G Marking: A K STXL 1225 XX A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS Ta=25°C unless otherwise noted. Rating Repetitive Peak Off-State Voltage (TJ=40 to 125℃, RGK=1KΩ) RMS On-State Current Symbol VDRM Value 380 Unit Volts

LP 1610

Abstract: CTH6 SCR 25a CSA408 CSH640 CTH640 1k ohms
Contextual Info: This TO-220 Material SCR AND TRIACS Copyrighted ru u LP UJ 111 _0 -C Maximum Ratings DEVICE VDRU IT RMS IT(»V) VGBM Electrical Characteristics ISR RGK= IDRM IGU PG|AV) lOuSm ax 20m Sm ax VT 6 (Ta=25°C, U nless Otherwise Specified) IT VT(T0) rT VGT IGT 0 VD

2N2325

Abstract: 2N2324 2N2326 2N2322 2N2323
Contextual Info: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)

TK-212

Abstract: tk3160 TK1406V TK2140 TK3120 TK1401 TK1402 TK1414 TK2120 tk2160
Contextual Info: Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings >TSM vdw m TY PE S 'o vrw m V rsM 10ms Vq t 'g t Ih RGK = oo V TM ,amb = 25°C <RM@ V DWM v rw m (A) 140 A eff (rms) TK1401 TK1402 TK1404 TK1406 TK1408 TK1410

Contextual Info: SANKEN ELECTRIC CO L T » 3 I THYRISTORS, 0000548 b E3SAKJ T-zs-»s T H Y R IS T O R S T - 4 * 3 - 2 3 Insulation withhold voltage Maximum ratings Surge ON current Tj=T]m in~Tjm ax RGK=1kn 50Hz half sine wave Continuous power application 50Hz half sine wave

tls 106-6

Abstract: CB-274
Contextual Info: o sensitive gate thyristors th y ris to rs sensibles THOMSON-CSF d v /d t T .m b = 25 °C Types •o Vr r m Ir m @ V r r m ■t s m ■d m @ V d r m V G T 10 m s Tj m a x rGk vdrm A 4 Arms / TLS TLS TLS TLS TLS T connex. 106-05, TLS 106-1 , TLS 106-2 , TLS

Contextual Info: FS01.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V to 800 V K GA This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. FS01.A This part is intended for general purpose

Contextual Info: FS01.N SENSITIVE GATE SCR SOT223 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage A K A G 200 V ÷ 600 V This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose

XL0840

Abstract: XL08
Contextual Info: XL0840 SENSITIVE GATE 0.8A SCRs A MAIN FEATURES Symbol Value Unit IT RMS 0.8 A VDRM 400 V IGT 200 µA G K DESCRIPTION Thanks to its highly sensitive triggering levels, the XL0840 device is suitable for all high volumes applications where the available gate current is limited,

Contextual Info: FS02.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage K G 200 V ÷ 800 V A FS02.A This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose

CR02AM

Abstract: 103 1KV SCR TRIGGER PULSE 3 phase cr02am equivalent CR02AM1 cr02a 3 phase 100A SCR CONNECTION CR02AM-1 104 1KV SCR TRIGGER PULSE circuit
Contextual Info: CR02AM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Lead-Mount, Phase Control SCR 0.3 Amperes/400 Volts OUTLINE DRAWING B B A E E ➂➁➀ D C Features: □ Planar Passivation CIRCUMSCRIBE CIRCLE F - DIA. □ Short Turn-on Time –

X0405MF

Abstract: SCR x0405mf X0402MF X0402NF X0405NF X0402N x0402
Contextual Info: X04 Series 4A SCRS SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 and 800 V IGT 50 to 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as

2N5064

Abstract: 2N5060 2N5062 SILICON CONTROL RECTIFIER 2N5063 "Silicon Controlled Rectifier" 2N5061/2N5062 2N5064 equivalent 2N5061 2N5062
Contextual Info: Central 2N5060 THRU 2N5064 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5060 series types are epoxy molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications.

P01xxN

Abstract: p1y sot223 SCR p01 P0102DA P0102DN P0102MA P0102MN P0111DA P0111DN P0111MA
Contextual Info: P01 Series 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.8 A VDRM/VRRM 400 and 600 V IGT 5 to 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as