RG1A Search Results

BO 243 A

Contextual Info: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

Contextual Info: RG1A THRU RG1M MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage- 50 to 1000 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction in a D0-204AP package

RG1G

Abstract: DO204AP DO-204AP
Contextual Info: RG1A THRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere * FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

RG1G

Abstract: DO204AP DO-204AP
Contextual Info: RG1A thru RG1M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier * d e t n Features e t a P DO204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. Reverse Voltage 50 to 1000V Forward Current 1.0A • High temperature metallurgically bonded construction

rg1g diode

Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

Contextual Info: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 0 Ampere FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

Contextual Info: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

DO-204AP

Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

DO204AP

Abstract: DO-204AP
Contextual Info: RG1A THRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere * FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

DO-204AP

Abstract: rg1g diode RG1A RG1G
Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

Contextual Info: RG1A THRU RG1M MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER V o lta g e - 50 to 1000 Volts C u rre n t - 1.0 Ampere ~~ FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction in a

rg1g diode

Abstract: DO204AP DO-204AP RG1J
Contextual Info: RG1A thru RG1M Glass Passivated Fast Switching Rectifier DO204AP 0.034 0.86 0.028 (0.71) DIA. • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at TA = 55°C with no thermal runaway

BYW56V

Abstract: BYW56 v BYW56 BY228 by228 v DO-204AP VISHAY MARKING vishay rectifiers marking G3 marking G4
Contextual Info: VISHAY Vishay Semiconductors Marking on Rectifiers V BYW56 V BY228 17208 17207 SOD57 SOD64 Figure 1. V Figure 3. V RG1A 17217 DO-204AP G1 Figure 2. Document Number 84085 Rev. 7, 07-Jan-03 RG3A 17218 G3 Figure 4. www.vishay.com 1 VISHAY Vishay Semiconductors

Contextual Info: TPS2456 www.ti.com SLVSA78B – MARCH 2010 – REVISED DECEMBER 2010 Dual 12 V Protection / Blocking Controller Check for Samples: TPS2456 FEATURES DESCRIPTION • • • • • • The TPS2456 is a dual, 12 V, channel protection hotswap and blocking (ORing) controller that

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

rg2m

Contextual Info: RG2A to RG2M VISHAY Vishay Semiconductors Fast Sinterglass Switching Rectifier Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

block diagram OF ZIGBEE module

Contextual Info: TPS2456 www.ti.com SLVSA78B – MARCH 2010 – REVISED DECEMBER 2010 Dual 12 V Protection / Blocking Controller Check for Samples: TPS2456 FEATURES DESCRIPTION • • • • • • The TPS2456 is a dual, 12 V, channel protection hotswap and blocking (ORing) controller that

Contextual Info: Agilent 1GG6-4080 0.155 – 43 Gb/s Differential I/O, High Power, Output Amplifier Data Sheet Features • Frequency range: 50 GHz single–ended , 30 GHz (diff.) • Single–ended or fully differential I/O operation • Low additive jitter: 600 fs, (43 Gb/s 231 – 1 PRBS, RMS typ.)

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced