RFG50N Search Results

RFG50N Datasheets (17)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RFG50N05	Intersil	50A, 50V, 0.022 ?, N-Channel Power MOSFETs	Original	PDF	48.31KB	6
RFG50N05	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
RFG50N05	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	131.05KB	4
RFG50N05	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	78.19KB	1
RFG50N05L	Fairchild Semiconductor	50A, 50V, 0.022 ?, Logic Level, N-Channel Power MOSFETs	Original	PDF	380.41KB	6
RFG50N05L	Intersil	7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge	Original	PDF	39.24KB	6
RFG50N05L	Intersil	50A, 50V, 0.022 ?, Logic Level, N-Channel Power MOSFETs	Original	PDF	52.87KB	6
RFG50N05L	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
RFG50N05L	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	78.19KB	1
RFG50N06	Fairchild Semiconductor	50 A, 60 V, 0.022 ohm, N-Channel Power MOSFET	Original	PDF	378.88KB	8
RFG50N06	Harris Semiconductor	50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs	Original	PDF	79.83KB	6
RFG50N06	Intersil	50A, 60V, 0.022 ?, N-Channel Power MOSFETs	Original	PDF	75.82KB	8
RFG50N06LE	Fairchild Semiconductor	50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFET	Original	PDF	466.99KB	8
RFG50N06LE	Harris Semiconductor	50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs	Original	PDF	273.7KB	12

RFG50N06LE	Intersil	50A, 60V, 0.022 ?, Logic Level N-Channel Power MOSFETs	Original	PDF	419.56KB	8
RFG50N06LE9A	Intersil	50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs	Original	PDF	419.55KB	8
RFG50NO5	Harris Semiconductor	N-Channel Enhancement Mode Power Field-Effect Transistors (MegaFETs)	Scan	PDF	266.36KB	5

RFG50N Price and Stock

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Harris Semiconductor


Harris Semiconductor RFG50N05 RFG50N05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RFG50N05		109		64	1 - 10 - 100 $5.63 1000 $5.04 10000 $4.74	Buy Now
Rochester Electronics	RFG50N05		145		1	1 - 10 - 100 $4.50 1000 $4.03 10000 $3.79	Buy Now
Harris Semiconductor RFG50N05L 50 A, 50 V, 0.027 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RFG50N05L		17			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Harris Semiconductor RFG50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RFG50N06LE		150		1	1 - 10 - 100 $1.15 1000 $0.95 10000 $0.85	Buy Now

RFG50N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fp50n05 Abstract: 50n05 Contextual Info: j h a r f r RFP50N05 RFG50N05 is May 1992 N -C hannel Enhancem ent-M ode Power Field-Effect Transistors (MegaFETs Features Package TO-220AB TOP VIEW • 50A, 50V • r DS(on) = 0 .0 2 2 fi DRAIN (FLANGE) • UIS SOA Rating Curve (Single Pulse) u • SOA is P o w e r-D issip atio n Lim ited	OCR Scan	rfp50n05 rfg50n05 o-220ab o-247 +492cs-43040 bvd88 fp50n05 50n05	PDF
RFG50N05 Abstract: HRX-50 TI0H RFP50N05 Contextual Info: £2 HARRIS 2-50 RFP50N05 RFG50N05 fciz N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs May 1992 P ackag e Features TO-220AB TOP VIEW • 50A, 50V • rDS(on) = 0.022ft uo DRAIN . (FLANGE) • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited	OCR Scan	rfp50n05 rfg50n05 022ft capgep50n0ccf3 +692cs-43040 an-7254 an-7260 ins240b hrx-50 ti0h	PDF
50N06LE Contextual Info: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	OCR Scan	rfg50n06le rfp50n06le rf1s50n06lesm ta49164 +6022i2 50e-4 53e-6 54e-3 21e-6 50n06le	PDF
fp50n06 Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω	Original	rfg50n06le rfp50n06le rf1s50n06le rf1s50n06lesm +7o-247 175oc fp50n06 f50n06le fp50n06l fg50n06l rf1s50n06lesm9a	PDF
RFP50N06 Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	rfg50n06 rfp50n06 rf1s50n06sm 175oc	PDF
F1S50N06 Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0 Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm +12175oc 98e-1 35e-4 83e-6 42e-9 1e-30 f1s50n06 rf1s50n06sm9a tb334 ta49018 50a60v rfp50n0	PDF
Contextual Info: Hormis S RFP50N05, RFG50N05 Semiconductor 7 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 50A,50V These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI integrated circuits, gives	OCR Scan	rfp50n05 rfg50n05 tb334 an7254 +1an7260	PDF
TA09872 Abstract: RFP50N05L9A Contextual Info: interrii RFG50N05L, RFP50N05L D a ta S h e e t 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,	OCR Scan	rfg50n05l rfp50n05l an7254 an7260 +2ta09872 rfp50n05l9a	PDF
TA49018 Abstract: RFP50N06 50A60V f1s50n06 Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	rfg50n06 rfp50n06 rf1s50n06sm ta49018 +4an7254 an7260 50a60v f1s50n06	PDF
Contextual Info: RFG50N05L, RFP50N05L Semiconductor A p ril 1999 D ata S h eet 50A, 50V, 0.027 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI	OCR Scan	rfg50n05l rfp50n05l an7254 an7260	PDF
F1S50N06 Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N Contextual Info: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model	OCR Scan	1s50n06 rfg50n06 rfp50n06 rf1s50n06sm +9o-247 022s1 rf1s50n06 f1s50n06 n-channel mosfet to-247 50a 50a60v tc2516 ta49018 1s50n	PDF
fp50n06 Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process	Original	rfg50n06le rfp50n06le rf1s50n06lesm fp50n06 +6c 4072 ta49164 f50n06le fg50n06l fp50n06l rf1s50n06lesm9a	PDF
fp50n06 Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process	Original	rfg50n06le rfp50n06le rf1s50n06lesm fp50n06 +650n06l 50n06le f50n06le fg50n06l fp50n06l rf1s50n06lesm9a	PDF
fairchild 9322 Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322 Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	rfg50n06 rfp50n06 rf1s50n06sm ta49018 +4fairchild 9322 4v251 f1s50n06 fairchild application note an 9322	PDF

F1S50N06 Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06 Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	rfg50n06 rfp50n06 rf1s50n06sm 175oc +5f1s50n06 rfp50n06 equivalent an7254 an7260 rf1s50n06sm9a	PDF
RFPS0N06 Abstract: TA49018 RFP50N06 Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	rfg50n06 rfp50n06 rf1s50n06sm ta49018 +3an7254 an7260 rfps0n06	PDF
rfp50n06 Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260 Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	rfg50n06 rfp50n06 rf1s50n06sm 175oc +9f1s50n06 fairchild 9322 fairchild application note an 9321 fairchild application note an 9322 rfp50n06 equivalent ta49018 rf1s50n06sm9a an7254 an7260	PDF
TA09872 Abstract: AN7254 RFG50N05L RFP50N05L RFP50N05L9A TB334 RFG50N Contextual Info: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,	Original	rfg50n05l rfp50n05l ta09872 an7254 +3rfp50n05l9a tb334 rfg50n	PDF
P50N05 Abstract: AN7254 IN5240B RFG50N05 Contextual Info: Power MegaFETs RFG50N05 File Number 2197 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 50 A, 50 V fDs(on) = 0.022 fi IN-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated • SOA is power-dissipation lim ited	OCR Scan	rfg50n05 92cs-42658 92cs-43040 an7254 +5an7260 in5240b 2cs-42f2z 92cs-42659 p50n05	PDF
TA49018 Abstract: RF1S50N06 F1S50N06 123E-3 Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm +8ta49018 0-022i2 07e-3 51e-7 05e-9 33e-8 f1s50n06 123e-3	PDF
TRS2-25-1 Abstract: TA49018 Contextual Info: RFG50N06 RFP50N06 fü HARRIS U U S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Package Features JEDEC T0-220AB TOP VIEW • 5 0 A ,60V • r DS(ON) = 0.022Q DRAIN (FLANGE) • Temperature Compensating PSPICE Model	OCR Scan	rfg50n06 rfp50n06 t0-220ab o-247 +698e-1 35e-3 83e-6 1e-30 trs2-25-1 ta49018	PDF
50130A Abstract: RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334 Contextual Info: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,	Original	rfg50n05l rfp50n05l 50130a rfp50n05l9a +2an7254 tb334	PDF
FP50N06L Abstract: fp50n06 F50N06LE FG50N06L F50n06l RFPS0N06 Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM interrii D ata S heet O cto b er 1999 File N u m b e r 4 0 7 2 .3 Features 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs • 5 0 A ,6 0 V These N-Channel enhancem ent mode power M O S F E Ts are manufactured using the latest manufacturing process	OCR Scan	rfg50n06le rfp50n06le rf1s50n06lesm ta49164 +8an7254 an7260 fp50n06l fp50n06 f50n06le fg50n06l f50n06l rfps0n06	PDF
RFP50N06 Abstract: F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM RF1S50N06SM9A RFG50N06 50A60V Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω Temperature Compensating PSPICE Model	Original	rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm +7o-247 175oc f1s50n06 an7254 an7260 rf1s50n06sm9a 50a60v	PDF

RFG50N Search Results

RFG50N Datasheets (17)

RFG50N Price and Stock

Harris Semiconductor RFG50N05

Harris Semiconductor RFG50N05L

Harris Semiconductor RFG50N06LE

RFG50N Datasheets Context Search

fp50n05

RFG50N05

50N06LE

fp50n06

RFP50N06

F1S50N06

TA09872

TA49018

F1S50N06

fp50n06

fp50n06

fairchild 9322

F1S50N06

RFPS0N06

rfp50n06

TA09872

P50N05

TA49018

TRS2-25-1

50130A

FP50N06L

RFP50N06