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    Infineon Technologies AG

    Infineon Technologies AG AUIRF6215

    - Rail/Tube (Alt: AUIRF6215)
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    Avnet Americas AUIRF6215 Tube 2,000 1
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    RS AUIRF6215 Bulk 50
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    Infineon Technologies AG AUIRF6215STRL

    Mosfet, P-Ch, -150V, -9A, 175Deg C, 110W; |Infineon Technologies AUIRF6215STRL
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    Newark () AUIRF6215STRL Tape & Reel 100
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    AUIRF6215STRL Cut Tape 1
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    Infineon Technologies AG IRF6216PBF

    MOSFET, POWER, P-CH, VDSS -150V, RDS(ON) 0.24OHM, ID -2.2A, SO-8,PD 2.5W, VGS +/-20V
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    RS IRF6216PBF Bulk 5
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    Win Source Electronics IRF6216PBF 66,230
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    Infineon Technologies AG IRF6218PBF

    MOSFET, POWER, P-CH, VDSS -150V, RDS(ON) 120 MILLIOHMS, ID -27A, TO-220AB, PD 250W
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    RS IRF6218PBF Bulk 3,000
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    Infineon Technologies AG IRF6217PBF

    MOSFET, POWER, P-CH, VDSS -150V, RDS(ON) 2.4 OHMS, ID -0.7A, SO-8,PD 2.5W, VGS +/-20V
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    RS IRF6217PBF Bulk 1,615
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    RF621 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214 PDF

    irf620

    Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
    Contextual Info: IRF620, RF621, IRF622, IRF623 h a r r is 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    irf620irf621irf622irf623+7ta9600rf621rf622rf623irf620 harrisifr6221rf621 PDF

    1RF620

    Contextual Info: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*


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    irf62or/621r/622r/623r+7irf620irf621irf622irf623irf620rirf621r1rf620 PDF