RF1K4922396 Search Results

528E-3

Contextual Info: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET 4322.1 Features • 2.5A, 30V Title The RF1K49223 Dual P-Channel power MOSFET is F1K4 manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

Contextual Info: RF1K49223 D ata S h e e t A u g u s t 19 99 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET» Power MOSFET • 2.5A, 30V manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

MS-012AA

Abstract: RF1K49223 RF1K4922396
Contextual Info: RF1K49223 S E M I C O N D U C T O R 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET June 1997 Features Description • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

Contextual Info: RF1K49223 HARRIS S E M I C O N D U C T O R 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET Description Features 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­ cess, which uses feature sizes approaching those of LSI

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

MS-012AA

Abstract: RF1K49223 RF1K4922396 TB334 590E-6
Contextual Info: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET File Number 4322.1 Features • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

945e

Abstract: MS-012AA RF1K49223 RF1K4922396 TB334 tc-519 6s2a
Contextual Info: RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI