RF TRANSISTOR 10-15 GHZ Search Results

Contextual Info: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

RF Transistor s-parameter

Abstract: RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2SC2570A RF TRANSISTOR 1.5 GHZ s-parameter RF POWER TRANSISTOR NPN RF Transistor s-parameter vhf low-noise amplifier 10GHZ TRANSISTOR 10GHZ Transistor s-parameter
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION •Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA

Contextual Info: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO

MSC3130T1

Abstract: SMD310
Contextual Info: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO

Contextual Info: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO

MSC3130T1

Abstract: SMD310
Contextual Info: MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max

Contextual Info: MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage VCBO 15 Vdc Collector−Emitter Voltage VCEO 10 Vdc Emitter−Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

transistor SMD p90

Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
Contextual Info: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

transistor w 431

Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
Contextual Info: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features

Contextual Info: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •

Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

Contextual Info: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •