RF POWER AMPLIFIER 400MHZ Search Results

433MHZ amplifier 1w

Abstract: Transistor A14 RF2126PCK RF2126 RF5187 RF Based Wireless Electronic Notice Board pc
Contextual Info: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT

433MHZ amplifier 1w

Abstract: Schematic/RF2126
Contextual Info: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT

Contextual Info: NJM2278 300/400MHz Band 20mW Power Amplifier  GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to

NJM2278

Abstract: MURATA LQW18A NJM2278F1 RF 24N GRM21 LQW18A rf power amplifier 400MHz
Contextual Info: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to

Contextual Info: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to

RA30H3340M

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H3340M Silicon MOS FET Power Amplifier, 330-400MHz 30W MOBILE RADIO PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS SUPPLY 3 V dd :DRAIN BIAS SUPPLY 4 Po :RF O U TPUT

MAX2472

Abstract: MAX2473 MAX2620 MAX2645 MAX2683 MAX2684 MAX2690
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: wireless local loop, WLL, transceiver, 3.5GHz, voltage controlled oscillator, VCO, LNA, power amplifier, PA, SiGe, low noise amplifier, vco buffer amplifiers Nov 14, 2001 APPLICATION NOTE 806 RF ICs for 3.5GHz WLL Transceivers

RF Radio frequency IC, 8pin

Abstract: MAX2620 MAX2623 equivalent MAX2472 MAX2473 MAX2645 MAX2683 MAX2684 MAX2690 RF Transceiver 800mhz
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: wireless local loop, WLL, transceiver, 3.5GHz, voltage controlled oscillator, VCO, LNA, power amplifier, PA, SiGe, low noise amplifier, vco buffer amplifiers Nov 14, 2001 APPLICATION NOTE 806 RF ICs for 3.5GHz WLL Transceivers

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456673 1234566738 345667389 RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module

TSH691

Abstract: TSH691ID
Contextual Info: TSH691  LOW COST 40MHz - 1GHz AMPLIFIER . . . 28dB GAIN @ 3V @ 450MHz +13.5dBm OUTPUT POWER P1dB BIAS PIN FOR OUTPUT POWER & AMPLIFIER DISABLE 50Ω INPUT/OUTPUT MATCHING D SO8 (Plastic Micropackage) DESCRIPTION TSH691 is a low cost RF amplifier consisted of 2

RA07H3340M-101

Abstract: marking GG RA*3340 RA07H3340M
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340 RA07H3340M 07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module

350-400MHZ

Abstract: 21202 M68732SLA
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SLA Silicon MOS FET Power Amplifier, 350-400MHz 7W FM PORTABLE OUTLINE DRAWING Dimensions in mm PIN: D Pin :RF INPUT V gg :GATE BIAS SUPPLY ( D V dd :DRAIN BIAS SUPPLY

Contextual Info: polyfet rf devices F1014 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1014

Contextual Info: polyfet rf devices F1014 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1012

Contextual Info: polyfet rf devices F1012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1402

Contextual Info: polyfet rf devices F1402 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1015

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1208

Contextual Info: polyfet rf devices F1208 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency :9kHz～400MHz ■ Output Power :200W min. @1dB Comp. R&K-A009K401-5353R SPECIFICATIONS ＠＋25℃ Frequency Range Small Signal Gain Gain Flatness Output Power Operation Mode

Contextual Info: polyfet rf devices L88208 General Description PATENTED GOLD METALIZED SILICON GATE RF POWER MOSFET Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM,

AN721

Abstract: MRF134 RF POWER MOSFET AN211A AN215A MRF137 "RF MOSFET"
Contextual Info: MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V M/A-COM Products Released - Rev. 05202009 Product Image Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. N–Channel enhancement mode •

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to

GRM1882C1H5R0CZ01D

Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V