F1015 Search Results

Contextual Info: F10153 • F10553 FIOK VOLTAGE COMPENSATED ECL QUAD D LATCH DESCRIPTION - The F10153/F10553 are high-speed Quad D Latches consisting of four bistable latch circuits with D type inputs and gated Q outputs. The gated outputs allow direct wiring to a bus. When the enable is LOW, outputs will follow the D inputs.

Contextual Info: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA F10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

F10153

Abstract: F10553
Contextual Info: F10153 • F10553 FIOK VOLTAGE COMPENSATED ECL QUAD D LATCH DESCRIPTION - The F10153/F10553 are high-speed Quad D Latches consisting of four bistable latch circuits with D type inputs and gated Q outputs. The gated outputs allow direct wiring to a bus. When the enable is LOW, outputs will follow the D inputs.

Contextual Info: F10153 • F10553 FIOK VOLTAGE COMPENSATED ECL QUAD D LATCH DESCRIPTION - The F10153/F10553 are high-speed Quad D Latches consisting of four bistable latch circuits with D type inputs and gated Q outputs. The gated outputs allow direct wiring to a bus. When the enable is LOW, outputs will follow the D Inputs.

common base amplifier

Abstract: motorola MRF MRF1015 Motorola transistors MRF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F1015M A M R F1015M B The RF Line M icrowave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

F1015

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1015 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Poiyfet,tm process features gold metal for greatly extended

TRF1015

Contextual Info: F1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

WR112 5W Load

Contextual Info: P B tiG E C p l e s s e y DS3536-1.1 F1013-49 & F1147/48 LOW POWER WAVEGUIDE CIRCULATORS * FREQUENCY COVERAGE 7.75 - 40.0GHz * CIRCULATORS AND ISO-CIRCULATORS AV A ILA B LE * 4-PORT VERSIONS IN R120 & R140 * COMPACT AND ROBUST CONSTRUCTION This data sheet describes a standard range of 3-port circulators and iso-circulators in R84, R100,

legrand

Contextual Info: 2|3 5| 4| PRODUCT N* 19.48 SEE TABLE / \ ! '3' 03 ^r cu LO A ! \ v ^ MAXIMUM COPL.ANARITY 0.1 nn MEASURED BY MEANS [IF SMARTSCQPE TYPE EQUIPMENT AT DEFINED POINTS B B MEASUREMENT POINTS □N SOLDER TAILS u / ^ | r X n a t'l. code SEE NOTES i t r ecn no d r date

Legrand

Contextual Info: r 2|3 PRDDUCT N' IQ /IQ S E E TA B LE / \ SE E NOTE 3 !i S* jit* h i? n il !?! ill! / \ MAXIMUM C O PLANARITY 0.1 nn MEASURED BY MEANS OF SMARTSCOPE TY P E EQUIPMENT AT DEFINED PO INTS r 2 ,3 MEASUREMENT POINTS A T 1,1 nn / X AND 0 / Y FROM TH E MIDDLE OF

mkp 275v x2

Abstract: PILKOR PCX2 337 MKP PCX2 337 MKP x2 150n 275 VAC F10333 99002 PILKOR PCX2 337 mkp 150n 275v x2 SH03001-2003 pcX2 275V
Contextual Info: Pilkor components Interference Suppression film capacitors PCX2 337x1 Standard MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5mm QUICK REFERENCE DATA Capacitance range (E6 series) * 0.01㎌ to 3.3㎌ Capacitance tolerance ±10 %, ±20 % Rated (AC) voltage 50 to 60 Hz

Legrand

Contextual Info: r / 2|3 \ PRODUCT NUMBER 55308-XXX TERMINAL LOADING 1 = FULLY LOADED 6 POS HOLD DOWN OPTION PLATING OPTION 1= OUTSIDE 3 - 0.76 An GOLD 2= INSIDE 2 = ONLY POS 2,3/,5 LOADED 3 = ONLY POS 12,5,6 LOADED 5= 1.P7 An GOLE 0.4 <6X *i i t l! i f»J| ]?f rij; liji

Legrand

Contextual Info: r a3 PRODUCT NUMBER i \ 55305- 1 PLATING OPTION 3= 0.76 ah GOLD S* TERMINAL LOADING 1= LULLY LOADED HOLD-DOWN OPTION 1= OUTSIDE 2= INSIDE 5= 1.27 on GOLD 0.4 4X) s* i\ 4 A ii i A lijF p it Si !iji ( \ s 1S A INSIDE VERSION — RTD1R U * r^i ii \ v s h h

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PCX2 337 MKP

Abstract: PILKOR PCX2 337 PILKOR PCX2 337 MKP MKP 337 Pilkor pcx2 337 mkp 275v x2 X2 275V pcx2337 MKP X2 PILKOR 275V X2
Contextual Info: Pilkor components Interference Suppression film capacitors PCX2 337 275V MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5mm QUICK REFERENCE DATA Capacitance range (E6 series) * 0.01㎌ to 3.3㎌ Capacitance tolerance ±10 %, ±20 % Rated (AC) voltage 50 to 60 Hz

C9024

Abstract: E2512 w1302 LB78K0S f5007 F5020 F-2103 PC-9800 RA78K0S E26141
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: r 2 |3 PRODUCT NUMBER / \ 55311- XXX | PLATING OPTION 3= 0.76 AH GOLI 5 - 1.27 AH GOLT ii HDLD-DDWN DPTIDN TERMINAL LOADING 1= OUTSIDE 2= INSIDE 1 = FULLY LOADED 6 POS 2 = ONLY POS 1,2,7,8 LOADED DNLY POS 3,4,5,6 LOADED 0,4 8X s sfu AREA FOR VACCUM PICK & PLACE

f10600

Contextual Info: Standard Low Pass Filters RLC Electronics' Standard Low Pass Filters are available with cut off frequencies ranging from 100MHz to 18 GHz. These filters combine minimum insertion loss and low VSWR in the Pass Band, together with sharp skirt selectivity and high

legrand panel

Abstract: Legrand
Contextual Info: r 2 |3 PRODUCT NUMBER / \ 55311 -X X X ii PLATING OPTION HOLD-DOWN OPTION 3= 0.76 an GOLI 1= OUTSIDE 1 = FULLY LOADED 6 POS 5= 1.27 ón GOLE 2= INSIDE 2 = ONLY POS 1,2,7,8 LOADED TERMINAL LOADING QNLY POS 3,4,5,6 LOADED 0 . 4 8X ;s AREA FOR VACCUM PICK & PLACE

PILKOR PCX2 337 MKP

Abstract: Class B DV- 130-1 PILKOR PCX2 337 275V X2 Class B DV 130-1 PCX2 337 pilkor PCX2 pilkor mkp 275v x2 F14333
Contextual Info: Pilkor components EMI Suppression film capacitors PCX2 337x1 Standard MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5 mm QUICK REFERENCE DATA Capacitance range (E6 series) * 0.01㎌ to 3.3㎌ Capacitance tolerance ±10 %, ±20 % Rated (AC) voltage 50 to 60 Hz

MAX8778

Abstract: ECE5021 EMC4001 MEC5025-NU ec isl6236 P26SD mec5025 ICS951463 25VF016 U107D
Contextual Info: A B C D E Battery Charger ISL88731 Parker Block Diagram CPU Clock Generator ICS 951463 U1400 FW289 4 Intel Mobile CPU Yonah / Merom ULV FSB:533Mhz 4 HOST BUS U7500 JW620 +PBATT INPUTS OUTPUTS +PWR_SRC +VCC_CORE System DC/DC DDRII 533/667MHz RS600ME ISL6236/MAX8778