RF POWER AMPLIFIER 1800 MHZ Search Results

Contextual Info: RF Wireless Products TQ7541 1710 – 1785 MHz High-Efficiency 3-Volt DCS-1800 Power Amplifier The TQ7541 is a high-efficiency power amplifier developed for DCS-1800 handsets operating at the 1710 to 1785 MHz uplink band. The unit provides high-efficiency amplification

Contextual Info: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz

Infineon moisture sensitive package

Abstract: PTMA210152M RO4350 68c21
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

PTMA210152M

Abstract: RO4350 Infineon moisture sensitive package
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

CD723

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

PTMA210152

Abstract: PTMA210152M PCC104bct-nd 210152 PTMA210152M V1 PCC104BCTND RO4350 3224W-202ETR-ND P00ECT-ND PCE3718CT-ND
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

PTMA180152M

Abstract: MO 1877 01 MO-166
Contextual Info: Preliminary PTMA180152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2000 MHz PTMA180152M* Package DSO-20-63 Description The PTMA180152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2000 MHz band. This device is offered in

GRM422Y5V106Z050AL

Abstract: PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

GRM422Y5V106Z050AL

Abstract: PTMA180402M RO4350 INFINEON 20PIN
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

PTMA180402M V1

Abstract: GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices

IC 74573

Abstract: 74573 74573 data sheet datasheet 74573 30304 74573 datasheet M513 MA02206GJ MAAPSS0107 MAAPSS0107SMB
Contextual Info: RoHS Compliant 3.6 V, 0.5 W, RF Power Amplifier IC for DECT 1800 - 2000 MHz Features • • • • • • • • • • • MAAPSS0107 V1 Functional Schematic Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation

J499

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Contextual Info: PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.

04749

Contextual Info: 3.6 V, 0.5 W, RF Power Amplifier IC for DECT, 1800 - 2000 MHz Features MA02206GJ V2 Functional Schematic • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package

Contextual Info: 3.6 V, 0.5 W, RF Power Amplifier IC for DECT, 1800 - 2000 MHz Features MA02206GJ V3 Functional Schematic • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package

P 1504 EDG

Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

CD723

Abstract: PCC104BCTND PCC104bct-nd PTMA210152
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

BGY502

Abstract: bgy284e BGY288 rf power amplifier 850 MHZ
Contextual Info: BGY288 GSM/GPRS quad-band amplifier Ultra-small RF power amplifier module for mobile phones with integrated power control loop Measuring only 64 mm2, the BGY288 is an ultra-small GSM/GPRS power amplifier module with an accurate, integrated power control loop. Designed for 850, 900, 1800

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the