RF NPN POWER TRANSISTOR 100MHZ Search Results

NTE475

Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz
Contextual Info: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE473

Contextual Info: NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages

common emitter amplifier

Abstract: NTE16002
Contextual Info: NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V

2N3553

Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
Contextual Info: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver

2SC1070

Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low

2SC2758

Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC2758,2SC2758R RF AM P. FOR UHF TV TUNER NPN SILICON TRANSISTOR The 2SC2758, 2SC2758R are specifically designed fo r U HF RF am p lifie r PACKAGE DIMENSIONS applications. The 2SC2758 and 2SC2758R feature high power gain, low

BF173

Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Contextual Info: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages

transistor revers characteristic

Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol

RF POWER TRANSISTOR 100MHz

Abstract: NPN Epitaxial Silicon Transistor silicon transistor KSC2786 high Power Amplifier 100mhz Transistor FT TO NPN 4V 5mA
Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product f T=600MHz Typ • High Power Gain GPE=22dB at f=100MHz  ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic

Ksc1674

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic

rf fairchild transistor 100mhz amplifier

Abstract: KSC2786 rf fairchild transistor 100mhz
Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic

Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage

multi emitter transistor

Abstract: RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A NTE16003
Contextual Info: NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.

Contextual Info: ADVANCE INFORMATION MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR POWER SEMICONDUCTOR Features • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications

Contextual Info: FORWARD INTCENAHONAl ELECTRONICS LTD, S9016 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE * High Total power dissipation. Pt=400mW ABSOLUTE MAXIMUM RATINGS a t Tamb=2$°C C haracteristic Symbol R ating

Contextual Info: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. TO-92 • High total power dissipation. PT=400mW ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. • High total power dissipation. PfMOOmW ABSOLUTE MAXIMUM RATINGS (TA-2 5 t) C haracteristic Sym bol Collector-Base Voltage Coilsctor-Hm itter Voltage Emitter-Base Voltage

Contextual Info: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1674 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA TV PIE A M P L IF IE R S TUNER RF AMPLEFIER,MIXER,OSCILLATOR * High Current Gain-Bandwidth Product fT=600MHz Typ * High Power Gain Gpe=22d B at f=100MHz

SS9016

Contextual Info: SS9016 SS9016 AM Converter, FM/RF Amplifier of Low Noise. • High total power dissipation. PT=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings

BF 234 transistor

Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Contextual Info: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz

transistor L42

Abstract: c1674 baw 92 T-3117 0lc04 KSC1674 RF POWER TRANSISTOR 100MHz samsung tv samsung tv tuner BRY10
Contextual Info: ¡SAMSUNG SE MIC OND UC TO R INC D KSC1674 OOObálb £ | T '-jy -fy NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz

KSC1674

Contextual Info: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted