RF MOSFET ERICSSON Search Results

1301P

Abstract: K1206 ldmos
Contextual Info: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output

k1206

Abstract: Ericsson B
Contextual Info: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,

data transistor 1650

Abstract: 1650 LD 10045 pte10045
Contextual Info: ERICSSON ^ PTE 10045* 30 Watts, 1.60-1.65 GHz LDMOS Field Effect Transistor Description The 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 w a tts m inim um o u tp u t power. N itride surface

ericsson 10007

Abstract: s 10007
Contextual Info: ERICSSON í PTF 10007 35 Watts, HF -1.0 GHz LDMOS Field Effect T ra n s is to r Description The PTF 10007 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GFIz. It is rated at 35 watts minimum output power. Nitride surface

10019

Abstract: P4917-ND
Contextual Info: ERICSSON ^ PTE 10019* 70 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10019 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for cellular, GSM, and DAMP applications in the 860 to 960 MHz range. It is rated at 70 watts

transistor number D 2498

Contextual Info: ERICSSON 5 PTE 10122* 50 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts minimum

Contextual Info: ERICSSON ^ PTE 10041* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride

Contextual Info: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum

transistor c1213

Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
Contextual Info: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface

Contextual Info: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum

Contextual Info: ERICSSON ^ PTE 10107* 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10107 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2,0 GHz. It is rated at 5 watts minimum output power. Ion implantation, nitride

Contextual Info: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface

k1206 220 r3

Contextual Info: ERICSSON PTE 10048* 30 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10048 is an internally matched common source N-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 2.1 to 2.2 GHz. It is rated at 30 watts power output.

ericsson 10007

Abstract: c 2575 gs
Contextual Info: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface

IDG200

Contextual Info: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum

ERICSSON 10031

Abstract: PTF 10031 ericsson b
Contextual Info: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation

ic 151 811

Contextual Info: ERICSSON ^ PTE 10053* 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10053 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride

JX - 638

Contextual Info: ERICSSON ^ PTE 10041 * 12 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10041 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts minimum output power. Ion implantation, nitride

Contextual Info: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage

transistor d 1557

Contextual Info: ERICSSON ^ PTF 10021 30 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for linear driver and final applica­ tions in the 1.4 to 1.6 GHz range such as DAB/DAR. it is rated at 30

transistor 21789

Abstract: 0965 TRANSISTOR ATC 1595
Contextual Info: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface

Contextual Info: ERICSSON ^ PTE 10015* 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10015 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1 0 GHz. It is rated at 45 watts minimum output power. Nitride surface

transistor 0882

Contextual Info: ERICSSON ^ PTE 10111* 6 Watts, to 1.5 GHz LDMOS Field Effect Transistor Description The 10111 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1,5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

resistor 177 178 179

Contextual Info: ERICSSON ^ PTF 10100 165 Watts, 860-900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output.