RF MOSFET DRIVER Search Results

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

Mosfet J49

Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •

500w mosfet power amplifier circuit diagram

Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
Contextual Info: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability

PE84246

Abstract: PE84246-EK
Contextual Info: ADVANCE INFORMATION PE84246 Military Operating Temperature Range High Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE84246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

"RF MOSFETs"

Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
Contextual Info: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

Contextual Info: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

PE84230

Abstract: PE84230-EK 8423
Contextual Info: PRELIMINARY SPECIFICATION PE84230 Military Operating Temperature Range SPDT High Power MOSFET RF Switch Product Description The PE84230 SPDT High Power MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply reflective switch integrates onboard CMOS control logic driven by a simple, single-pin

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

MOTOROLA POWER 726 MOS FET TRANSISTOR

Abstract: Amp. mosfet 1000 watt VK20019-4B 108 motorola transistor mosfet 400 mhz MRF160 VK200 24906 MW8005
Contextual Info: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull

MOTOROLA J210

Abstract: F 2452 mosfet MRF166C microstrip line SD1902 DV2820 612 Mosfet MOTOROLA RF MOSFET Driver zener motorola 1N5925A
Contextual Info: MOTOROLA Order this document by MRF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V

smd code 431

Contextual Info: SIEMENS FM-Tuner TUA 431 OX TUA 431OXS Preliminary Data Bipolar IC Features • • • • • • • • • • Double-balanced mixer High RF-input impedance Sym. and unsym. operation AGC-generation for PIN-Diodes and MOSFET’s Strictly symmetrical RF-parts

Tda 1026

Abstract: FAF 45 DIODE SMD TOKO 10.7MHz filter wide FM stereo MPX Decoder upc 1026 SFE10,7 TDA am/fm TOKO 10.7MHz 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM tda audio vs 50v
Contextual Info: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ■ 1ST MIXER FOR 1ST FM IF 10.7MHz WITH PROGRAMMABLE IF TANK ADJUST FOR FM AND AM UPCONVERSION ■ 2 PROGRAMMABLE IF-GAIN STAGES

Tda 1026

Abstract: 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM IRC5 upc 1026 FAF 45 DIODE SMD 3SK126 smd diode B4f TVR21 tvr10 450KHZ
Contextual Info: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ■ 1ST MIXER FOR 1ST FM IF 10.7MHz WITH PROGRAMMABLE IF TANK ADJUST FOR FM AND AM UPCONVERSION ■ 2 PROGRAMMABLE IF-GAIN STAGES

DEIC420

Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI 13.56Mhz class e power amplifier 13.56MHZ mosfet DE-275 EVIC420 1 ampere 15v transformer IXDD415
Contextual Info: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V

Contextual Info: MRF137 RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz. MAXIMUM RATINGS ID 5.0 A VDSS 65 V PDISS 100 W @ TC = 25 °C

VN66AK

Abstract: 98AK VN67 analog VN98AK VN99AK VN 98AK VN35AK VN67AK vn99ak.90v
Contextual Info: 5gnn VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • High current analog switches • High gain-bandwidth product • RF power amplifiers • Inherently temperature stable

L9181

Abstract: l6262 Nippon capacitors L 0946
Contextual Info: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

NE551

Abstract: NE5510 4810 mosfet GSM1800 NE5510179A NE5510179A-T1
Contextual Info: PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A

"RF MOSFET CLASS AB

Abstract: RF MOSFET CLASS AB
Contextual Info: QuikPAC Data QPP-002 30 W, 925-960 MHz Class AB Amplifier General description: Features: The QPP-002 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with

mosfet amplifier class ab rf

Abstract: QPP-001 "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB
Contextual Info: QuikPAC Data QPP-001 30 W, 869-894 MHz Class AB Amplifier General description: Features: The QPP-001 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with