RF MOSFET DRIVER Search Results

Mosfet J49

Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

Mosfet J49

Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •

MRF177

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz

500w mosfet power amplifier circuit diagram

Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
Contextual Info: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

RF MOSFET

Abstract: MRF171A
Contextual Info: •sSsmi-Conductoi ZPtoauati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from

PE4246

Abstract: PE4246-EK
Contextual Info: PRODUCT SPECIFICATION PE4246 SPST High-Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE4246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and

Contextual Info: PRODUCT SPECIFICATION PE4246 SPST High-Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE4246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and

PE84246

Abstract: PE84246-EK
Contextual Info: ADVANCE INFORMATION PE84246 Military Operating Temperature Range High Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE84246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and

PE4235

Abstract: PE4235-EK 1.5 j63
Contextual Info: PRODUCT SPECIFICATION PE4235 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4235 MOSFET RF Switch is designed to cover a broad range of applications from DC through 4.0 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS

RF power amplifier 49 MHz

Contextual Info: MOTOROLA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics

PE4220

Abstract: PE4220-08MSOP-2000C PE4220-08MSOP-50A PE4220-EK
Contextual Info: PRODUCT SPECIFICATION PE4220 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4220 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 2.5 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL

PE4237

Abstract: cmos logic 4000 series PE4237-EK
Contextual Info: PRODUCT SPECIFICATION PE4237 SPDT High Power MOSFET RF Switch Product Description The PE4237 High Power MOSFET RF Switch is designed to cover a broad range of applications from DC through 4.0 GHz. This reflective switch integrates on-board CMOS control logic driven by a single-pin, low voltage CMOS or

"RF MOSFETs"

Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
Contextual Info: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

Contextual Info: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

PE84230

Abstract: PE84230-EK 8423
Contextual Info: PRELIMINARY SPECIFICATION PE84230 Military Operating Temperature Range SPDT High Power MOSFET RF Switch Product Description The PE84230 SPDT High Power MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply reflective switch integrates onboard CMOS control logic driven by a simple, single-pin

te 2443 MOTOROLA transistor

Abstract: 1S2210 MOSFET 830 63 ng MRF171
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

Q 817

Abstract: Triode 805 zener motorola 1N5925A AN211A AN215A AN721 MRF137 J302 fet arco 406
Contextual Info: MOTOROLA Order this document by MRF137/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF137 N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

IN5343

Abstract: Diode IN5343 TRANSISTOR Z4 305 Power Mosfet MOTOROLA zener diode z10 zener motorola MRF166 MRF166W IDG 600 mrf166w application note
Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics

MOTOROLA POWER 726 MOS FET TRANSISTOR

Abstract: Amp. mosfet 1000 watt VK20019-4B 108 motorola transistor mosfet 400 mhz MRF160 VK200 24906 MW8005
Contextual Info: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc

400w class d schematic

Abstract: 27.12Mhz
Contextual Info: Application Note 1813 27.12 MHz, CLASS-E, 400W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Overview The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET hybrid. This Application Note or Reference Design Kit does not