RF HIGH POWER TRANSISTOR Search Results

OSC-2.0SM

Abstract: ASI10639
Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER

TVU100

Abstract: 100-W TRANSISTOR S 838 ASI10651
Contextual Info: TVU100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness.

arco trimmer

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

M27500-16RC1509

Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

mrf1516

Abstract: MRF1512 wide band choke vk200 Unelco Metal Clad Micas AN211A motorola AN211A Transistor MRF151 UNELCO MICA CAPACITORS 1N5347 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W

VHB10-28F

Abstract: transistor npn 1854 "RF Power Transistor" ASI10721 138175
Contextual Info: VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is an NPN RF power transistor designed for 138-175 MHz VHF communications applications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L FLG

ULBM45

Abstract: ASI10685
Contextual Info: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

ULBM10

Abstract: ASI10682 TRANSISTOR TC 137
Contextual Info: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYPE DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in H F band mobile radio applications. FEATURES • High power gain: Gpe > 1 4 d B • @f = 27M H z, V cc = 12V , P0 = 13W

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,

DIODE aay 49

Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

murata SFG455A3 455KHz ceramic filter

Abstract: murata 455KHz ceramic filter TOKO 455KHz ceramic filter murata 455khz filter SA627 filter 455khz sfg455a3 TOKO 455KHz crystal filter 2A6597H capacitor ceramic variable RF
Contextual Info: RF COMMUNICATIONS PRODUCTS SA627 High performance low power FM IF system with high-speed RSSI Product specification Replaces data of November 3, 1992 RF Communications Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification

TVU025

Abstract: TRANSISTOR S 838 ASI10650 TRANSISTOR K 135 J 50
Contextual Info: TVU025 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .450 BAL FLG A The ASI TVU025 is a gold metalized RF power transistor designed for high linearity Calss-AB operation in UHF band IV and V TV transmitters. .060x45° B A FULL R .100x45° 1 1

An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
Contextual Info: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T

SMD Transistor z6

Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

741 datasheet motorola

Abstract: MOTOROLA 934 motorola MOSFET 935 905 motorola MRF182 MRF182S
Contextual Info: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

transistor npn 100w amplifier

Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Contextual Info: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

NCP700BSN18T1G

Abstract: NCP700BSN30T1G transistor tip 3005 marking ADQ NCP700bsn33t1g
Contextual Info: NCP700B 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700B is 200 mA LDO that provides the engineer

Contextual Info: Common Source Push-Pull Pair ARF475FL D G S S G RF POWER MOSFET S S D N - CHANNEL PUSH - PULL PAIR 165V 450W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

Contextual Info: Common Source Push-Pull Pair ARF476FL D G S S G RF POWER MOSFET S S D N - CHANNEL PUSH - PULL PAIR 165V 450W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

sd1458

Abstract: M111 sgs-thomson RF TRANSISTORS
Contextual Info: SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION POUT = 14 W MIN. WITH 14.0 dB GAIN

NCP700

Abstract: NCP700MN180R2G NCP700MN280R2G NCP700MN300R2G
Contextual Info: NCP700 Ultra Low Noise, High PSSR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700 is 150 mA LDO that provides the engineer with a very