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    ARF300 Search Results

    ARF300 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ARF300
    Microsemi RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 125; BVDSS (V): 500; RqJC (°C/Watt): 0.15; Case Style: T-11; COO: C-E Original PDF 114.76KB 4
    ARF300 25R J
    Ohmite Resistors - Chassis Mount Resistors - RES CHAS MNT 25 OHM 5% 200W Original PDF 260.13KB
    ARF300 6R J
    Ohmite Resistors - Chassis Mount Resistors - RES CHAS MNT 6 OHM 5% 300W Original PDF 260.13KB
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    ARF300 Price and Stock

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    Ohmite Mfg Co ARF300 6R J

    Resistor, Wirewound, 6R, 5%, 300W; Resistance:6Ohm; Product Range:Arf Series; Power Rating:300W; Resistance Tolerance:± 5%; Voltage Rating:1.5Kv; Resistor Technology:Wirewound; Temperature Coefficient:± 150Ppm/°C; Product Width:79Mm Rohs Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark ARF300 6R J Bulk 1 1
    • 1 $62.43
    • 10 $47.97
    • 100 $41.65
    • 1000 $41.65
    • 10000 $41.65
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    RS ARF300 6R J Bulk 38 Weeks 10
    • 1 -
    • 10 $80.99
    • 100 $71.27
    • 1000 $71.27
    • 10000 $71.27
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    Ohmite Mfg Co ARF300 25R J

    RESISTOR, WIRE WOUND, METAL CLAD, 25OHMS, 300W, 1500V,+/-5%,250 DEG C, ARF SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ARF300 25R J Bulk 38 Weeks 10
    • 1 -
    • 10 $76.41
    • 100 $67.24
    • 1000 $67.24
    • 10000 $67.24
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    Microchip Technology Inc ARF300

    RF MOSFET (VDMOS) 500 V 300 W 27 MHz T11, Projected EOL: 2046-04-30 - Contact for Pricing
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    Microchip Technology Inc ARF300 24 Weeks
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    Amphenol Corporation 182101-10

    RF Connectors / Coaxial Connectors UHF STRT CRIMP PLUG FOR RG-59, 50 OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 182101-10 Each 100
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    • 100 $4.91
    • 1000 $3.99
    • 10000 $3.80
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    Amphenol Corporation 172316

    RF Connectors / Coaxial Connectors N R/A CLAMP PL RG 58,223
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    TTI 172316 Each 100
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    • 100 $20.90
    • 1000 $14.95
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    ARF300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ARF301

    Abstract: "RF MOSFET" 300W ARF300
    Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


    Original
    arf30145mhzarf300rf mosfet" 300w PDF

    Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original
    arf30045mhzarf301micnotes/1810 PDF

    4948

    Abstract: ARF300 ARF301 50VDSS
    Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original
    arf30045mhzarf3014948+150vdss PDF

    ARF300

    Abstract: ARF301 250nH 390PF 2.5 160V 431nH
    Contextual Info: Application Note 1808 April 2010 ARF300 – ARF301 In N-N and N-P Half Bridge RF Generators with Pulse and Sine Drive George J. Krausse Microsemi Corp. RF Power Products Group 405 SW Columbia St. Bend, OR 97702 USA gkrausse@microsemi.com and Richard Frey, P.E. K4XU


    Original
    arf300arf301250nh390pf 2.5 160v+1431nh PDF

    4948

    Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
    Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original
    arf30045mhzarf301micnotes/1810+44948class e power amplifier 13.56300w class ab amplifiermicrosemi application note PDF

    ARF301

    Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


    Original
    arf30145mhzarf300micnotes/1810 PDF

    Contextual Info: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF


    Original
    arf30045mhzarf301rating-4948+1micnotes/1810 PDF

    Contextual Info: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF


    Original
    arf30145mhzarf300 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7drf140045a, 1200v n-channel npt series igbtaptes80da120c3gapt35dl120hjsemiconductors cross referenceigbt triple modules 100a2000w mosfet power inverter PDF

    Contextual Info: ARF Low Profile Wirewound Metal Clad Resistors Flexible design with high pulse capability, ideally suited to braking and inverter / converter applications. Enhanced power levels can be achieved when heatsink mounted. • High power density • Low profile


    Original
    150ppm/arf150 PDF

    Contextual Info: ARF Low Profile Wirewound Metal Clad Resistors Flexible design with high pulse capability, ideally suited to braking and inverter / converter applications. Enhanced power levels can be achieved when heatsink mounted. • High power density • Low proile • 600V cables as standard


    Original
    150ppm/arf150 PDF

    DRF1400

    Abstract: 1n4148 spice model DRF1300 ic configuration of xnor gates PPG100 ARF467 ARF300 Signal Generator spice model 1n4148 DRF1200 microsemi drf1400
    Contextual Info: Application Note 1807 December 2009 DRF Series SPICE Models George Krausse Phone: 541-382-8028, ext. 1200 gkrausse@microsemi.com Introduction This application note presents SPICE Models for DRF100, DRF1200 and DRF1300 and DRF1400. These models are presented in two forms. The first, most straightforward, form is in applications where node zero 0 , (ground), is


    Original
    drf100drf1200drf1300drf1400+9arf466drf1201arf4671n4148 spice modelic configuration of xnor gatesppg100arf300 signal generatorspice model 1n4148microsemi drf1400 PDF