RF DRIVER Search Results

Contextual Info: CV110-2A Cellular-band High Linearity Downconverter IF IN GND 26 IF THRU GND 27 GND RF IN 28 25 24 23 22 RF OUT 1 GND 2 21 IF OUT IF Amp 20 GND RF Amp N/C 3 19 N/C IF Feedthru Path GND 4 18 GND LO Driver Amp IF THRU 5 17 BIAS GND 6 16 GND RF/IF 10 11 12 13

GRM39COG

Abstract: FR10K TCM4400 TRF1020 TRF3520 SSB Modulator application note K3332 GRMx7r grm39cog capacitor
Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

DS0042-10

Contextual Info: DAICO INDUSTRIES INC IT E 2b0»HE0 D G D O inb Q - ' T ' S I - D D S 0042-10/10 0 SP2T RF NO RF COU RF NO xt , \2 , T T Yt • Fast switching speed • Low transient • Built-in TTL compatible driver 1 !Î- fi' ft m <> OPERATING CHARACTERISTICS

Contextual Info: FEATURES ¿L tC DC - 2000 MHz MODEL NO. DS0850 _ j 3 nSec Transition Time Ultra Small TO-5 Package GaAs SP2T Low Cost SP2T See DS0813 For Version With Integrated TTL Driver LOGIC TABLE CONTA CONTB RF COM TO OV -7V RF 1 -7V j RF 2 OV s s DC CO S j o GUARANTEED PERFORMANCE

LK421

Contextual Info: polyfet rf devices LK421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

L8711P

Contextual Info: polyfet rf devices L8711P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2601 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SK722

Abstract: VDMOS
Contextual Info: polyfet rf devices SK722 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Mil-S-3928

Contextual Info: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu SPDT Switches Series 022 External Termination SPDT / DC-26.5 GHz / SMA RF PERFORMANCE Freq Range (GHz) DC-3

F2246

Contextual Info: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2211

Contextual Info: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2201

Contextual Info: polyfet rf devices F2201 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2021

Contextual Info: polyfet rf devices F2021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2003

Abstract: F20-03 idq04
Contextual Info: polyfet rf devices F2003 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2048

Contextual Info: polyfet rf devices F2048 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2213

Contextual Info: polyfet rf devices F2213 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2212

Contextual Info: polyfet rf devices F2212 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2047

Contextual Info: polyfet rf devices F2047 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2012

Contextual Info: polyfet rf devices F2012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base