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    LR501 Search Results

    LR501 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    LR501
    Polyfet RF Devices Silicon Gate Enhancement Mode Rf Power Ldmos Transistor Original PDF 37.4KB 2
    LR501D0J
    US Sensor/Littelfuse Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 500 OHM 5% 1206 Original PDF 85.3KB
    SF Impression Pixel

    LR501 Price and Stock

    OMRON Industrial Automation

    OMRON Industrial Automation OF46LR501390Q1RNCFN

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    Master Electronics OF46LR501390Q1RNCFN
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    OMRON Industrial Automation OF46LR501045Q1RNOFP

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    Master Electronics OF46LR501045Q1RNOFP
    • 1 $2117.37
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    OMRON Industrial Automation OF46LR501745Q2RNCFP

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    Master Electronics OF46LR501745Q2RNCFP
    • 1 $3170.16
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    OMRON Industrial Automation OF46LR501045Q1RNCFN

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    Master Electronics OF46LR501045Q1RNCFN
    • 1 $2120.58
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    OMRON Industrial Automation OF46LR501045Q1RNCFP

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    Master Electronics OF46LR501045Q1RNCFP
    • 1 $2120.58
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    LR501 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501 PDF

    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501 PDF

    LR501A

    Abstract: LDMOS
    Contextual Info: polyfet rf devices LR501A General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501aldmos PDF

    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501 PDF

    TB212

    Abstract: LR501
    Contextual Info: TB212, LR501 Vds=28VDC, Idq=1A, Gain/Eff vs. Frequency 18 100 16 90 14 80 12 Gain 70 Gain in dB 10 60 8 50 6 Efficiency 40 4 2 30 20 30 50 100 150 200 250 Frequency in MHz 300 350 400 450 470 Efficiency in % Pout fixed at 100W TB212 Pout/Gain vs Pin, 30MHz, LR501, Vds=28VDC, Idq=1A


    Original
    tb212lr50128vdc30mhz+1250mhz PDF

    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original
    lr501 PDF

    LR501

    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501 PDF

    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501 PDF

    TB206

    Abstract: LR501 78L08 16AWG 160RF
    Contextual Info: TB206 LR501, RF out/Gain vs RF in, Vds=28Vdc, Idq=0.8A, Freq=160MHz 20.0 220 200 19.5 180 160 RF out 19.0 140 Gain 120 18.5 100 P1dB at 200W 80 18.0 60 40 17.5 20 17.0 0.5 1 1.5 2 2.5 3 3.5 4 RF in Watts TB206 LR501, RF out/Gain vs RF in, Vds=28Vdc, Idq=0.8A, Freq=230MHz


    Original
    tb206lr50128vdc160mhz+4230mhz78l0816awg160rf PDF

    LR501

    Abstract: RF push pull power amplifier
    Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    lr501rf push pull power amplifier PDF

    U.S. Sensor

    Contextual Info: Surface Mount End-Banded Chip Thermistors 1206 Style U.S. Sensor’s surface mount end-banded thermistor elements are designed for use on hybrid substrates, integrated circuits or printed circuit boards. They have a solder coated metallization which is suitable for various contact techniques including wire bond, epoxy


    Original
    lr501d0jlr102d0jlr252l0jlr502f0j+7lr103g0jlr303k0jlr503l0jlr104r0jlr204r0jlr504v0ju.s. sensor PDF

    HIOKI 3287

    Abstract: P1201A crest audio pro 8200
    Contextual Info: 2014 Electrical Measuring Instruments General Catalog Recorders Data loggers Power Meters LCR Testers Battery Testers Current Probes Clamp Sensors Recorders / Data Loggers / Remote Measurement System / Component Measuring Instruments / Signal Sources / Safety Standards Measuring Instruments


    Original
    0001e52-3ze-15khioki 3287p1201acrest audio pro 8200 PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original
    l8821plb421lp721sm341+8lq821sq701sr401mgcf21ly942mosfet 50 amp 1000 voltgx40025 watt hf mosfet PDF

    up62

    Abstract: FASTON 4.8mm OP62 EN60730-2-9 UP61 bv 1719 relay 4344-144 OP62G 4344-184 thermostat T21
    Contextual Info: S E L C O PRODUCTS COM PANY THERMOSTATS ELECTRONIC CONTROLS ISO 9001/AS 9100 Certified Quality System Our Service Makes The Difference 1/2” Disc Thermostats 1/2” Disc Hermetically Sealed Thermostats 3/4” Disc Thermostats Encapsulated Thermostats Thermal Protectors


    Original
    9001/asup62faston 4.8mmop62+7en60730-2-9up61bv 1719 relay4344-144op62g4344-184thermostat t21 PDF

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original
    200num1sq221lk822lk722+11lx521rf push pull mosfet power amplifier100 watt hf mosfet 12 volt150w amplifier rf vhf 139 144 mhzuhf 150w mosfet150w amplifier rf vhf 139 - 144 mhzldmos 15wldmos l2711 vhflp801lk602lr941 PDF

    LR502F0J

    Abstract: LR102D0J
    Contextual Info: Surface Mount End-Banded Chip Thermistors 1206 Style U.S. Sensor’s surface mount end-banded thermistor elements are designed for use on hybrid substrates, integrated circuits or printed circuit boards. They have a solder coated metallization which is suitable for various contact techniques including


    Original
    lr501d0jlr102d0jlr252l0jlr502f0j+6lr103g0jlr303k0jlr503k0jlr104r0jlr204r0jlr504v0j PDF