REPRESENT COUNTRY OF ORIGIN Search Results
REPRESENT COUNTRY OF ORIGIN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
isahaya
Abstract: MC2839
|
Original |
MC2839 MC2839 JEITASC-59 JEDECTO-236 isahaya | |
2SC5633
Abstract: Marking E50A
|
Original |
2SC5633 2SC5633 SC-62 Marking E50A | |
MC2858
Abstract: SC-75A JEITASC-75A
|
Original |
MC2858 MC2858 SC-75A JEITASC-75A | |
K2226
Abstract: SC-75A
|
Original |
RT1N237 RT1P237 SC-75A K2226 | |
MC2856Contextual Info: 〈SMALL-SIGNAL DIODE〉 MC2856 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON ANODE DESCRIPTION OUTLINE DRAWING Unit:mm MC2856 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching |
Original |
MC2856 MC2856 | |
MC2837
Abstract: isahaya
|
Original |
MC2837 MC2837 isahaya | |
isahaya
Abstract: 2SA1235 2SA1365 2SC3440 to-236
|
Original |
2SA1365 2SA1235 2SC3440. 180MHz JEITASC-59 O-236 isahaya 2SA1365 2SC3440 to-236 | |
Isahaya Electronics
Abstract: ISAHAYA flammable
|
Original |
||
flammable
Abstract: isahaya
|
Original |
||
ISAHAYA
Abstract: flammable Isahaya Electronics
|
Original |
||
flammable
Abstract: ISAHAYA
|
Original |
||
isahayaContextual Info: ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! ・Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, |
Original |
||
ISAHAYA
Abstract: Isahaya Electronics Corporation
|
Original |
||
ISAHAYA
Abstract: Isahaya Electronics Isahaya Electronics Corporation
|
Original |
||
|
|||
2SC6046Contextual Info: 2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE Notice:This is not a final specification.Some parametric limits are subject to change. OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC6046 is a silicon NPN epitaxial type transistor |
Original |
2SC6046 2SC6046 600mA 150mAIB | |
LS0002Contextual Info: HLMP-WL02, HLMP-WG02 High Intensity AlInGaP LED Lamps Data Sheet Description Features This 5 mm LED lamps is specially designed for applications requiring higher levels of intensity than is achieved with a standard lamp. The 5 mm lamp is available with 65 |
Original |
HLMP-WL02, HLMP-WG02 5989-4369EN AV02-1532 LS0002 | |
Contextual Info: HLMP-WL02, HLMP-WG02 High Intensity AlInGaP LED Lamps Data Sheet Description Features This 5 mm LED lamps is specially designed for applications requiring higher levels of intensity than is achieved with a standard lamp. The 5 mm lamp is available with 65 |
Original |
HLMP-WL02, HLMP-WG02 5989-4369EN AV02-1532EN | |
DARLINGTON TRANSISTOR ARRAYContextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high |
Original |
M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY | |
Contextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high |
Original |
M54563FP 500mA M54563FP 500mA) 20P2N-A | |
Contextual Info: <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION PIN CONFIGURATION M54522FP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current |
Original |
M54522FP 400mA M54522FP 400mA) 20P2N-A | |
Contextual Info: <TRANSISTOR ARRAY> M54585FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION M54585FP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current |
Original |
M54585FP 500mA M54585FP 500mA) 20P2N-A | |
dataset
Abstract: represent country of origin
|
Original |
1970s 1980s, dataset represent country of origin | |
Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform |
Original |
M63840KP 500mA M63840KP 500mA) 20P2F-A | |
isahaya
Abstract: MC982 F100mA
|
Original |
MC982 MC982 isahaya F100mA |