RECTIFIER 1A 1400V Search Results

silicon rectifier diode

Abstract: NTE506 1400V Diode
Contextual Info: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: Maximum Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V

Contextual Info: 1 AMP FAST RECOVERY RECTIFIER MFS112 - MFS116 CATHODE BAR Dim. Inches A B C D E F - B - 1 -£ > b Working Peak Reverse Voltage Microsemi Catalog Number MFS112 MFS114 MFS116 .081 .160 .130 .075 .270 .015 .087 .180 .155 .095 .290 .030 Repetitive

TE 2161

Abstract: MFS112 MFS114 MFS116 Rectifier 1A 1200V
Contextual Info: 1 Amp Fast Recovery Rectifier MFS112 - MFS116 -CATHODE BAR É Dim. Inches > Minimum M illim e te r Maximum Minimum Maximum Notes - o - 1 -O h FH .087 .180 .155 .095 .290 .030 2.06 4.06 3.30 1.90 6.86 .381 2.21 4.57 3.94 2.41 7.37 .762 D O -2 1 5 A A h Microsemi

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

LA1200

Abstract: 5B4 RECTIFIER BP107 R700 R780 R70A Powerex R700
Contextual Info: bME D • 7ET4bEl GGObEbM bEfl H PR X R700/R701 Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 G B flB r â l P U F D O S B Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f f Q ç f j f j ç p

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: 4855452 INTERNATIONAL RECTIFIER IO R 73 73C .07169 D Data Sheet No. PD-2.137 in t e r n a t i o n a l r e c t i f i e r D E | 4ASS455 0 0 0 7 1 ^ 5 | R23D & R23DR SERIES 1800 - 1200 VOLTS RANGE 300 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS

MFS112

Abstract: MFS114 MFS116
Contextual Info: CATHODE BAR Dim. Inches 11 Minimum C A IT A B C D E F - B - —O h Microsemi Catalog Number Working Peak Reverse Voltage MFS112 MFS114 MFS116 .081 .160 .130 .075 .270 .015 M illim e te r Maximum Minimum .087 .180 .155 .095 .290 .030

D0205AB

Abstract: D0-205AB
Contextual Info: 4855452 INTERNATIONAL RECTIFIER IO R in t e r n a t i o n a l 73 73C 07174 D T"-*/-2-3 Data Sheet No. PD-2.136 r e c t if ie r D E | 4 f l 5 S 4 S e 0007174 T R23D & R23DR SERIES 1400 - 800 VOLTS RANGE 315 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES

Contextual Info: 4855452 INTERNATIONAL RECTIFIER I« R 73C 07143 D. T z O f * ’ '¿-3 Data Sheet no. k u - z . i 33 INTERNATIONAL RECTIFIER 73 DE | MflSii4ic! UUUV143 T R18C, R18S, R18CR & R18SR SER IES 1800 - 1200 VOLTS RANGE 185 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIO DES

Contextual Info: 4855452 INTERNATIONAL RECTIFIER IQ R 73C Q7194 DJ T - o/ ~ 0 - 3 Data Sheet No. ku-2.142 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 73 D I 4fiSSMS2 D O D ? n 4 R30D & R30DR SERIES 1800 - 1200 VOLTS RANGE 415 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES

r2mf

Contextual Info: 4855452 INTERNATIONAL REC TI FI ER I O R 1IINTERNATIONAL K iT C B K IA T in M A I llH DE | Mfl SSMSH 0D07flfifl 02E 07888 D T- & 3 ~¿13 Data Sheet No. PD-2.1Ü2 SRECTIFIER C ^T IB IC B H | R23DF AND R23DFR SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIME 1.25yt/s

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

JJS-100

Abstract: D0-205AC P-200A
Contextual Info: 4855452 INTERNATIONAL R E C T I F I E R 02E 07864 IO R l INTERNATIONAL RECTIFIER □H D G 3 ^ / ^ata Sr,eet NO. PL>"Z.U98 DE I MfiSSMSH 00D70b4 1 | R18CF, R18SF, R18CFR AND R18SFR SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIM E 1.25//S 100 AMP AVG STUD MOUNTED

Contextual Info: MCC Features • • • • • 1F10 THRU 1F18
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 0.5 Amp Fast Recovery Rectifier 1000 to 1800 Volts High Current Capability Low Leakage Fast Switching for High Efficiency

1A 1600V diode

Abstract: 1F18 1F10 1F12 1F14 1F15 1F16 Rectifier 1A 1200V
Contextual Info: 1F10 THRU 1F18 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • 0.5 Amp Fast Recovery Rectifier 1000 to 1800 Volts High Current Capability Low Leakage Fast Switching for High Efficiency Low Forward Voltage Drop

1200V fast

Contextual Info: MCC Features • • • • • 1F10 THRU 1F18
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 0.5 Amp Fast Recovery Rectifier 1000 to 1800 Volts High Current Capability Low Leakage Fast Switching for High Efficiency

BY268

Abstract: BY269
Contextual Info: BY268.BY269 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage fast rectifier 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Type Symbol Value Unit Peak reverse voltage, non repetitive

1R30DF

Abstract: 500R R300F
Contextual Info: 4855452 IN T E R N A T IO N A L R E C T I F I E R T O R 1 INTERNATIONAL IK IT C C 3 k l A T I ^ k l A • 02E 07918 D 7 Data Sheet No. PD-2.107 E 3 C / " T ie iC B RECTIFIER DE | MASS4S2 0007Tlfi =J | R30DF AND R30DFR SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIME 1.25//S

Rectifier 1A 1400V

Contextual Info: 4855452 ÏINTERNATIONAL RECTIFIER _ in t e r n a t io n a l r e c t if ie r T3Ç 07148 -p-£>/-2.3 IMP. M U - Z . 13 2 DE | 4 Ö S 5 4 5 2 000714Ö ö I D a ta Sh e e t _ IOR _ 73 R18C, R18S, R18CR & R18SR S E R IE S 1400 - 800 VOLTS RANGE 190 AMP AVG STU D MOUNTED

he804

Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
Contextual Info: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs

Contextual Info: MCC TM Micro Commercial Components Features • • • • 1F10 THRU 1F18
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 0.5 Amp Fast Recovery Rectifier 1000 to 1800 Volts Low Leakage Current

Contextual Info: MCC TM Micro Commercial Components Features • • • • 1F10 THRU 1F18
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 0.5 Amp Fast Recovery Rectifier 1000 to 1800 Volts Low Leakage Current

Contextual Info: MCC TM Micro Commercial Components 1F10 THRU 1F18
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Low Leakage Current Fast Switching for High Efficiency Case Material: Molded Plastic. UL Flammability