RECOVERY TIME MOSFET Search Results

mosfet 300V 10A

Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Contextual Info: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

Contextual Info: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

100v 20a fast recovery power diode

Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Contextual Info: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter

Contextual Info: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

Contextual Info: LZPF7N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application

mosfet 600V 20A

Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

LTP120N06

Contextual Info: LTP120N06 N-Channel 60V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant

Contextual Info: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

AN569

Abstract: NTB30N20 NTB30N20T4
Contextual Info: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: NTB13N10 Advance Information Power MOSFET 13 Amps, 100 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 13 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V Fast Recovery Diode

Power MOSFET 50V 20A

Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
Contextual Info: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant

M04N60

Contextual Info: N Channel MOSFET M04N60 4.0A Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode TO-220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Continuous Drain Current

marking n10 fet

Abstract: NTD12N10
Contextual Info: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode

Contextual Info: LTP95N07 N-Channel 75V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter BVDSS=75V ,

35N15

Abstract: W35N15
Contextual Info: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

AN569

Abstract: NTP35N15
Contextual Info: NTP35N15 Preferred Device Advance Information Power MOSFET 37 Amps, 150 Volts N–Channel TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 37 AMPERES 150 VOLTS 50 mΩ @ VGS = 10 V Fast Recovery Diode

Contextual Info: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: NTP35N15 Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • 37 AMPERES 150 VOLTS 50 mW @ VGS = 10 V Fast Recovery Diode Avalanche Energy Specified

M02N60B

Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Contextual Info: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated

NT6600

Abstract: nt 6600 G dpak-3 369D NTD6600N NTD6600NT4 NTD6600NT4G
Contextual Info: NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb−Free Package is Available

Amp. mosfet 1000 watt

Abstract: MOSFEt n channel for 26 volt 52 amp AN569 NTB52N10 NTB52N10T4 800mJ
Contextual Info: NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

35N15

Abstract: AN569 NTB35N15 NTB35N15T4 SMD310 rc motor speed control
Contextual Info: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature