READ Search Results

UZ210

Abstract: P1275
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI

Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

i486

Contextual Info: SN74BCT2141 2-WAY 8K x 18 SYNCHRONOUS CACHE DATA RAM D3613. A UG UST 1990 2-Way 8K x 18 Bit Architecture FN PACKAGE TOP VIEW Synchronous Read and Write Access at 50 MHz Clock Frequency Incorporates Burst Counter for Burst-Read (Read-Hit) Cycles or Burst-Write (Line-Fill)

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

A1051

Contextual Info: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs

27C020-12

Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
Contextual Info: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

TD-172

Abstract: 3B3 diode TOLD9151MB
Contextual Info: TOSHIBA VLD Technical Data TOLD9151MB Units in: mm • Small package high power index guided type M Q W InGaAlP V L D ■ Package flange: 05.6m m ■ Applications include: Read/write optical disk systems *5 .6 Surface ^ Pin Connection 0.03 * 4 .4 M A X 5 i

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

74170

Abstract: OF IC 74170
Contextual Info: TTL MSI TYPES SN54170, SN54LS170. SN74170, SN74LS170 4-BY-4 REGISTER FILES WITH OPEN-COLtECTOR OUTPUTS B U L L E T IN N O , D L -S 7 6 1 1 3 4 9 , M A R C H 1 9 7 4 — R E V IS E D O C T O B E R 1 9 7 6 • Separate Read/Write Addressing Permits Simultaneous Reading and Writing

TC5316200bP

Abstract: TC5316200BP/BF
Contextual Info: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

character generater

Contextual Info: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.

S3036

Contextual Info: 6. Contact Sensor Module 6-1 Outline The contact sensor m odule is an im age reader unit which integrates an im age sensor, lens, light source and control circuit. T he contact sensor m odule has the follow ing fea­ tures. 1 O ptical design is not necessary

CT 2048

Abstract: D8228
Contextual Info: SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L 2048 x 9,4096 x 9,8192 x 9,16384 x9 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES SCAS226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 Reads and Writes Can Be Asynchronous or Coincident Organization: - SN74ACT7203L - 2048 x 9

TIS152

Contextual Info: TLS1521 THIN-FILM 6-CHANNEL READ/WRITE PREAMPLIFIER D3625, DECEM BER 1 990-R E V IS E D MARCH 1991 • Differential Input Capacitance . . . 35 pF Typ • Low Input Noise Voltage . . . 0.5 nV/VRz Typ FN PACKAGE TOP VIEW 9 z • o o <••> > y o 2 1 x

Contextual Info: SN74ACT7881 1024 x 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS227C - FEBRUARY 1993 - REVISED FEBRUARY 1996 • Member of the Texas Instruments Wldebus Family • Independent Asynchronous Inputs and Outputs • Input-Ready, Output-Ready, and Half-Full Flags

27C512-3

Abstract: 27c512-45 TG-14 27C512 27C512-2
Contextual Info: TEXAS "Ô 961725 INSTR TEX A S {ASIC/MENORY} INS TR PRODUCT PREVIEW 77 d e A S IC /M EM O R V T 0 ^ 1 7 5 5 77C 4 0 9 33 G D Ll ü li 3 3 D TMX27C512 524,288-BIT ERASABLE PROGRAM M ABLE READ ONLY M EM O RY N O V E M B E R 1965 J PACKAGE Organization . . . 64K x 8

TLR306

Abstract: TLR308 TLG306 TLR 308 TLG308 TLR307 toshiba TLr307 TLG307 TOSHIBA LED DISPLAY TLG3
Contextual Info: TOSHIBA TOSHIBA LED DISPLAY TLG306, TLG307, TLG308, TLG309 TLR306, TLR307, TLR308, TLR309 • 15mm Character Height Numerical and Polarity Display. • Application : Numerical Readout for Instrument and Consumer Product.

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

d8253

Contextual Info: SN74AS632A 32 BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUIT D 3 3 9 7 , JAN U AR Y 1990 • Detects and Corrects Single-Bit Errors • Detects and Flags Dual-Bit Errors • Built-In Diagnostic Capability • Fast W rite and Read Cycle Processing Times

A18D0

Abstract: TC534000AP
Contextual Info: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the

DR856

Abstract: K/FND COMMON CATHODE DISPLAY
Contextual Info: TOSHIBA TLG346T,TLG347T,TLS346T.TLS347T.TLR346T,TLR347T TOSHIBA LED DISPLAY TLG346T, TLG347T, TLS346T TLS347T, TLR346T, TLR347T • 10mm 0.4” Character Height Numerical Display. • Application : Numerical Readout for Instrument and Consumer Product. •