RE1C Search Results

Contextual Info: RE1C002UN Nch 20V 200mA Small Signal MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 1.2W ID 200mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

RE1C002ZP TL

Abstract: mosfet marking 12W
Contextual Info: RE1C002ZP Datasheet Pch -20V -200mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 1.2W ID -200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C002UN Datasheet Nch 20V 200mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 1.2W ID 200mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

RE1C002ZP

Abstract: RE1C RE1C002ZP TL
Contextual Info: RE1C002ZP RE1C002ZP Datasheet Pch -20V -200mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 1.2W ID -200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

MARKING 68W

Abstract: RE1C002UN
Contextual Info: RE1C002UN RE1C002UN Datasheet Nch 20V 200mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 1.2W ID 200mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C002ZP Pch -20V -200mA Small Signal MOSFET Datasheet lOutline VDSS -20V RDS on (Max.) 1.2W ID -200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001UN Data Sheet Nch 20V 100mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 3.5W ID 100mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 3.5W ID 100mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001UN RE1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 3.5W ID 100mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: RE1C001UN Nch 20V 100mA Small Signal MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 3.5W ID 100mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

RE1C001ZP

Contextual Info: RE1C001ZP RE1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

Contextual Info: tm ä n S w it c h x- E123MUX Device s E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION ^ • • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format)

Contextual Info: Advantages of the PCB Relays Some control system designs require the relay to be mounted directly on the Printed Circuit Board PCB . These parts will need to be small enough to make PCB mounting practical and more easy to manufacture. The Magnecraft PCB-mounted relays

E123 multiplexer

Abstract: CH10L R12CS1 ch9l
Contextual Info: BACK E123MUX Device E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION • Multiplexer/demultiplexer for ITU-T Recommendations: G.742 E2 frame format G.751 (E3 frame format) • Multiplexer/demultiplexer converts: 16 E1s to/from 1 E3 (E13 Skip Mux), or

intel 7882

Abstract: Tepro Technology TE 2395 motorola 431an TXC-06830 431and
Contextual Info: TEPro Device Channelized DS3 Access Solution TXC-06830 DATA SHEET PRODUCT PREVIEW LINE SIDE DS1/E1 Monitor Port 4 DS1/E1/DS3 interface, 145 TEPro™ TXC-06830 is a RISC processor-based device that supports the requirements of next-generation channelized DS3 access

ict flexacom

Abstract: ACS8527 GR-1244-CORE
Contextual Info: ACS8527 MUXPLL Line Card Protection Switch for PDH, SONET or SDH Systems ADVANCED COMMUNICATIONS Description FINAL Features The ACS8527 is a highly integrated, single-chip, MUX with PLL solution for protection switching between two SECs SDH/SONET Equipment Clocks from Master and Slave

MMS205

Abstract: r50e2y1 CLARE PRMA1A05 MMS-205 gordos relay Aromat DPDT Single Coil 5v latching relay 721C2410 DSS41A05B B556 Transistor B556
Contextual Info: SECTION 6 PRINTED CIRCUIT BOARD RELAYS AND REED RELAYS 1 TO 30 AMPERES 117SIP 107DIP 171DIP 172DIP 102VX/HVX 7 49 976 60 276 PHONE: 843 393-5778 FAX: (843) 393-4123 EMAIL: info@magnecraft.com PRINTED CIRCUIT BOARD REED RELAYS 117SIP, 107DIP, 171DIP/172DIP

E123 multiplexer

Abstract: TXC-03361AIPQ c5lsm TXC-03361 E123MUX
Contextual Info: E123MUX Device E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format) The E123MUX is a CMOS VLSI device that provides the E13 functions needed to multiplex and demultiplex 16 independent E1 signals to and from an E3 signal that conforms

BD9486F

Abstract: bd9486
Contextual Info: Datasheet LED Drivers for LCD Backlights 1ch Boost up type White LED Driver for large LCD BD9486F 1.1 General Description Key Specifications     BD9486F is a high efficiency driver for white LEDs and is designed for large LCDs. BD9486F has a boost DCDC

printed circuit board relays

Abstract: b300 pilot duty b300 pilot duty 10a 193 RELAY B300 relay 5a RE1C relay 15A 125 v relay b300 relay,10A
Contextual Info: Printed Circuit Board Relays 49 PCB Enclosed Relay GENERAL SPECIFICATIONS • Small size www.magnecraft.com • Rated up to 10A relays@magnecraft.com • TV3 rating 847-441-2540 • 1/3 HP rating @ 120VAC for inductive switching • Variety of footprint configurations for wide selection

E123 multiplexer

Abstract: HDB3 E2 multiplexers 74 LS 150 C10l 03361
Contextual Info: E123MUX Device E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format) The E123MUX is a CMOS VLSI device that provides the