D3SB60
Abstract: d3sb10 60 D3SB10 rbv406g D3SB100 D3SB20 D3SB40 D3SB80 E231047 RBV401G
Contextual Info: LESHAN RADIO COMPANY ， LTD. D3SB10 RBV401G Thru D3SB100(RBV410G) FEATURES ．Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 ．This series is UL listed under the Recognized Component index,file number E231047 ．Single-in-line package
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RBV-404 bridge rectifier
Abstract: RBV4005 RBV410 RBV-406
Contextual Info: BL GALAXY ELECTRICAL RBV4005 - - - RBV410 VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A SILICON BRIDGE RECTIFIERS KBJ4 FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak
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RBV408
Abstract: RBV-406
Contextual Info: RBV4005-RBV410 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A KBJ4 Features 4.7± 0.2 Ideal for printed circuit board 25± 0.3 φ 3.2± 9.5± 0.2 15± 0.3 plastic technique 0.15 4.6± 0.15 3.7± 0.2 Reliable low cost construction utilizing molded
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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zmm22zmm24zmm27zmm43+11zmm472x062hgk1051ss216gk104smd transistors w06d20sb80smd marking 5asd25sb80lrb706f-40t1g2x062
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EM01Z
Abstract: FMM-22S FMM-32S RBV-402 RBV-4102 RBV-602 SFPM-52 SFPM-62 AM01 AM01Z
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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em01zfmm-22sfmm-32srbv-402+6rbv-4102rbv-602sfpm-52sfpm-62am01am01z
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FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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rbv-60rbv-40fmpg2fmarking rbv - 401+83f series surface mount transistorfmxa-2202srbv-406msjpm-h4fmv-3hu diodediode eu02rectifier rbv-606marking rbv
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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vr-60ssvr-61ssdiode 8603sot23 1z+8fmv-3hurm2crn4zgeneral fbtux-f5b3gu diodediode rbv-406mpart marking
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RM1Z 12
Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50
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rm1z 12rectifier rbv-606rbv-1506am01a+6em01afmm-26sfmm-36srbv-406rbv-406hrbv-406m
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2sa7442sa7452sa7462sa747+162sa7642sa7652sa7682sa7692sa7702sa771fn651ctb-34d2sc5586hvr-1x7str20012sap17n2sd2619rbv-4156bsla40372sk1343
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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vr-60ssvr-61ssb 2306 barrier rectifierdiode ru 3b+8fmq2furbv-406ux-f5bw 2206 schottkyfmv -30jez0150fmu 22 ufmp-3fu
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611
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RBV-1506
Abstract: AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4086H RBV-4106M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50
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SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720
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o03cc0room3202h1-o03cc0-1008031nmsd mosfet drive datasheet 4468 8 pin+9sk 18752ctx12sfgt31318752 sankensla6805mfn651sla6101sk 18751str20012
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FMM-32S
Abstract: AM01 AM01Z EM01Z FMM-22S RBV-402 RBV-4102 RBV-602 SFPM-52 SFPM-62
Contextual Info: Mass g Fig. No. VRM (V) Package Part Number 200V IFSM (A) I F (AV) (A) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Tj (°C) Tstg (°C) IR (H) (µA) IR (µA) VF (V) max IF (A) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass
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diode RBV-406M
Abstract: DIODE rbv 602 Diode rbv-408
Contextual Info: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)
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triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
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the32-246622h1-o03ea0-0510020nmtriac zd 607transistor c5586+8bridge rectifier sanken rb40rb40 bridge rectifierrb60 bridge rectifierzd 607 - triacctpg2fctx12stoshiba transistor c4468sta524a
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RBV-406M
Abstract: AM01Z EM01Z FMM-22S FMM-32S RBV-401 RBV-402 RBV-4102 RBV-602 SFPM-52
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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RBV-4102
Contextual Info: 200V 10A Bridge Diode RBV-4102 •Absolute maximum ratings Ratings Unit VRSM 250 VRM 200 IF AV 10 ■Electrical characteristics Parameter Ratings V VF 1.1max V V IR 10max µA Tj=25°C, VR=VRM, per element A H.IR 100max µA Tj=150°C, VR=VRM, per element Rth( j-c)
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AM01Z
Abstract: RBV402
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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RBV-606
Abstract: FMM-26S 606H
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50
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Mark RBV
Abstract: transistor RBV RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50
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AM01Z
Abstract: EM01Z FMM-22S FMM-32S RBV-402 RBV-406H RBV-4102 RBV-602 SFPM-52 SFPM-62
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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