RBV10 Search Results

D10SB10

Abstract: D10SB100 D10SB20 D10SB40 D10SB60 D10SB80 E231047 50A-10500 D10SB4 5SB60
Contextual Info: LESHAN RADIO COMPANY, LTD. Bridge rectifiers D10SB10 Thru D10SB100 Feature RBV1002S Thru RBV1007S ．Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 ．This series is UL listed under the Recognized Component index,file number E231047

diode 1006D

Abstract: 1002D JEC 400 1006D RBV1000D 1001d
Contextual Info: 5YMSEMI SEMICONDUCTOR RBV1000D - R B V 1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 5 0 - 1000 Volts lo : 10 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

RBV1000

Abstract: RBV1010 1001RBV
Contextual Info: 5YNSEMI SEMICONDUCTOR RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 10 Amperes 3.9 ± 0.2C3 , 30 ± 0.3 4.9 ± 0.2 - P= K-H FE A TU R E S : * * * * * * * * 0 3.2 ± 0.1 High current capability High surge current capability

RBV1000

Abstract: RBV1010
Contextual Info: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability

1004D

Abstract: 1002d 1001d 1006D RBV1000D RBV1010D
Contextual Info: RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS

Contextual Info: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC

1002D

Abstract: 1004D 1006D RBV1000D RBV1010D
Contextual Info: RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability

1004D

Abstract: 1002D 1006D RBV1000D RBV1010D diode 1006D
Contextual Info: RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability

D10SB60

Abstract: D10SB100 D10SB80 IFSM200A D10SB10 D10SB20 D10SB40 E231047
Contextual Info: LESHAN RADIO COMPANY ， LTD. D10SB10 RBV1002S Thru D10SB100(RBV1007S) FEATURES ．Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 ．This series is UL listed under the Recognized Component index,file number E231047 ．Single-in-line package

D10SB60

Abstract: D10SB10 D10SB100 D10SB20 D10SB40 D10SB80 E231047
Contextual Info: LESHAN RADIO COMPANY, LTD. Bridge rectifiers D10SB10 Thru D10SB100 Feature RBV1002S Thru RBV1007S ．Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 ．This series is UL listed under the Recognized Component index,file number E231047

RBV10

Abstract: transistor RBV RBV1000 RBV1010
Contextual Info: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC

Contextual Info: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS

Contextual Info: RBV10005-RBV1010 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 10 A KBJ Features Rating to 1000V PRV 4.7± 0.25 30± 0.3 3.7± 0.2 Surge overload rating to 300 Am peres peak Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product

D10SB10

Abstract: D10SB100 D10SB20 D10SB40 D10SB60 D10SB80 E231047
Contextual Info: LESHAN RADIO COMPANY, LTD. Feature & Dimension ．Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 ．This series is UL listed under the Recognized Component index,file number E231047 ．Single-in-line package ．High current capality with small package

RBV-404B

Abstract: RBV-1004B RBV-406B
Contextual Info: Bridge Diodes Schottky Barrier Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. RBV-404B Tj (°C) IFSM (A) Tstg (°C) 50Hz With Half-cycle Sinewave Heatsink Single Shot 4.0 60 RBV-1004B 40 IR (H) (mA)

HVR-1X 7 diode

Abstract: hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B
Contextual Info: CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in