RBE 215 RELAY Search Results

C1685

Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Contextual Info: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,

Darlington 40A

Abstract: NTE2542 darlington complementary 120v NTE2541 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE2541 NPN & NTE2542 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

NTE2560

Abstract: RBE 215 RELAY SILICON COMPLEMENTARY transistors darlington darlington complementary 120v NTE2559
Contextual Info: NTE2559 NPN & NTE2560 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Contextual Info: NTE2536 NPN & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: D High Current Capacity D Wide ASO Range D Low Saturation Voltage Applications: D Motor Drivers D Relay Drivers D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Contextual Info: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

S7E SMD TRANSISTOR

Contextual Info: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

NTE2314

Contextual Info: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.

Silicon NPN Darlington transistor

Contextual Info: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

NTE2534

Abstract: NTE2535
Contextual Info: NTE2534 NPN & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

547 relay ic

Abstract: NTE2314 "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Contextual Info: NTE2314 Silicon PNP Transistor High Current, High Speed Switch Compl to NTE2304 Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Contextual Info: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.

3 pin phototransistor

Abstract: 4 pin phototransistor phototransistor 3 pin OPTO MOC8204 MOC8204
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION MOC8204 The MOC8204 device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for high voltage applications and

4N33

Abstract: 4N32 4N33 APPLICATION NOTE 4n29 optocoupler 4n33 optocoupler datasheet 4n29 optocoupler Fairchild 4N32 4N29 4N30 4N31
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

optocoupler 4n33

Abstract: 4n29 optocoupler 4N33 APPLICATION NOTE 4N29 APPLICATION NOTE datasheet 4n29 optocoupler 4n33 schematic 4N32 4N29 4n33 4n30
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N33 APPLICATION NOTE

Abstract: 4N32SVM
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N32

Abstract: 4N33 4N32 test circuit 4N33 APPLICATION NOTE
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N29 APPLICATION NOTE

Abstract: optocoupler base resistor low voltage optocoupler ic 6-pin
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

opto-coupler

Abstract: 4n29
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

RBE 215 RELAY

Abstract: bu323z
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

Fairchild 4N32

Abstract: 4n29 optocoupler 4n33s fairchild
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

D1815

Abstract: 2539B GENERAL SEMICONDUCTOR ed 7ca 2SB1215 2SD1815 2044B EN2539
Contextual Info: Ordering num ber: EN2539B 2SB1215/2SD1815 N0.2539B smvo PNP/NPN Epitaxial Planar Silicon Transistors High-Current Sw itching Applications i A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

MOC8100 applications

Abstract: TIL117-M CNY171 CNY172 CNY173 CNY174 CNY17F1 CNY17F2 CNY17F3 CNY17F4
Contextual Info: CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108 Phototransistor Optocouplers Features Applications • CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix eg. CNY17F2M

ZXTP25100DFH

Contextual Info: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to

ZXTN25100DFH

Abstract: ZXTN25100DFHTA ZXTP25100DFH
Contextual Info: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to