RAYTHEON TRANSISTOR Search Results

RC5534NB

Abstract: RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534
Contextual Info: RAYTHEON-. SEMICONDUCTOR S7 p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON CO* Raytheon D E | 7 ST 73 bü^ DD0 41 ô 1 û LINEAR INTEGRATED CIRCUITS ' 57C 0 4 6 8 9 High Performance Low Noise Operational Amplifier Features • Small signal bandwidth — 10MHz

RC3302DB

Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
Contextual Info: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V

RAYTHEON

Abstract: RMPA0951-102 RO4003 PA0951
Contextual Info: Raytheon Raytheon Commercial Electronics RMPA0951-102 3V Cellular CDMA Power Amplifier Module The RMPA0951-102 is a dual mode, small outline power amplifier module for Cellular CDMA personal communication system applications. The Power Amplifier Module is internally-matched to 50 ohms and DC blocked which

gsm signal amplifier circuit diagram

Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
Contextual Info:
 Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

RAYTHEON

Abstract: RMPA2051 RMPA2051-102 RO4003 Rogers RO4003 mmic marking brown
Contextual Info: Raytheon Raytheon Commercial Electronics RMPA2051-102 3V WCDMA/CDMA2000 Power Amplifier Module The RMPA2051-102 is a small outline, low-profile power amplifier for WCDMA/CDMA2000 applications. The Power Amplifier Module PAM is internally matched to 50 ohms and DC blocked which minimizes the use of

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

RAYTHEON

Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

LM339 APPLICATIONS

Contextual Info: Raytheon Electronics LM139/LM139A, LM339 Semiconductor Division Single Supply Quad C om parators Features • Input common mode voltage range includes ground • Wide single supply voltage range— 2 V to 36V • Output compatible with TTL, DTL, ECL, MOS and

GSM9004

Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Contextual Info: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

RAYTHEON

Abstract: RMPA2550-252 54Mbps IC155
Contextual Info: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN

BEL 1240

Contextual Info: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %

Contextual Info: Raytheon Electronics Semiconductor Division L M 1 2 4/L M 3 24 Single-Supply Quad O perational A m plifier Features Description • • • • • • Each of the devices in this series consists of four indepen­ dent high-gain operational amplifiers that are designed for

rc4191

Abstract: Indiana general ferrite core ferroxcube Ee core
Contextual Info: Raytheon Electronics S e m ic o n d u c to r D iv is io n RC4391 Inverting and Step-Down Switching Regulator Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage Regulates supply changes • M icropower — Low quiescent current — 170 |lA

Contextual Info: Prelim inary Inform ation Raytheon Electronics Semiconductor Division R C 5033 A d ju stab le Synchronous DC-DC C onverter Features Applications • • • • • • • • • • • 3.3V power supply for Pentium based CPU motherboards • 3.45V pow er supply for AMD-K5™ CPU

rs-flip-flop

Abstract: rs-flip-flop cmos RC4152NB RV4152DE vfc 4152 RC4151 Frequency-to-Voltage Converter lowpass filter CIRCUIT DIAGRAM RV4152NB RC4152
Contextual Info: 4152 Voltage-to-Frequency Converter DESCRIPTION FEATURES The Raytheon 4 1 5 2 consists o f a com parator, a one-shot, a precise gated current-source o u tp u t, an internal voltage refer­ ence, and an open-co lector o u tp u t . . . all on a single m o n o ­

LLV1005FB10NJ

Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Contextual Info: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with

2N697 equivalent

Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10

RAYTHEON

Abstract: RMPA0951-102 RO4003 CMDA
Contextual Info: RMPA0951-102 3V Cellular CDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA0951-102 is a dual mode, small-outline power amplifier module PAM for Cellular CDMA personal communication system applications. The PA is internally-matched to 50 ohms and DC blocked which minimizes the

RAYTHEON

Abstract: RMPA1902-58 RMPA1902A-58
Contextual Info:
 R aytheon Commercial E lectronics RMPA1902A-58 PCS GaAs MMIC Power Amplifier The RMPA1902-58 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system applications. The MMIC requires offchip matching. The amplifier circuit design is a single ended configuration

CDMA2000-1X

Abstract: RAYTHEON RMPA1956-103
Contextual Info: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.

M38510/10101

Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Contextual Info: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC

Contextual Info: RMPA1956-103 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands. The PA is internally matched to 50

PCB Rogers RO4003

Abstract: RAYTHEON RMPA1951-102 RO4003 23ACPR
Contextual Info: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective

RAYTHEON

Abstract: RMPA1751-102 RO4003
Contextual Info: RMPA1751-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1751-102 is a small-outline, power amplifier module PAM for Korean-band CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management