RAU2 Search Results

Contextual Info: DS92UT16 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers Literature Number: SNOS992D July 19, 2011 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device.

2TC47

Abstract: BGA196 BIP-16 uaa 180 DS92UT16 DS92UT16TUF NUJB0196 TC21 intel AT 89 INSTRUCTION SET UAA 190
Contextual Info: DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes

rau2

Abstract: 1A011
Contextual Info: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

RAU27

Abstract: rau2
Contextual Info: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast

T23N

Abstract: au1017 4100 dram HYS14400 IPC 4104
Contextual Info: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability

Contextual Info: OBSOLETE DS92UT16 www.ti.com SNOS992E – JANUARY 2002 – REVISED APRIL 2013 DS92UT16 UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers Check for Samples: DS92UT16 FEATURES 1 • 23 • 832 Mbps LVDS 16-bit Serializer and Deserializer Interface

DS92UT16

Abstract: DS92UT16TUF NUJB0196 TC21
Contextual Info: DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes

DS92UT16

Abstract: DS92UT16TUF NUJB0196 TC21 BGA196 TC55 Series
Contextual Info: DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes

RAU2-X-109117-N

Abstract: RAU2-X-107117-N miteq LCL-RAU2
Contextual Info: FEATURES • • • • • • • • Low amplifier noise temperature Fully redundant power supplies Remote control via RS485 Automatic/manual control from both local and remote mode Remote status Off-line input/output access Amplifier current fault detection

M-phy Differential peak-to-peak output voltage

Abstract: A3838
Contextual Info: January 2002 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes

HY5118164B

Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
Contextual Info: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

19N80

Contextual Info: -HYUNDAI H Y 5 1 V 1 6 1 0 0 A S e r ie s 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques

WP-13

Abstract: ta22a DE456 1A039
Contextual Info: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

W41J

Abstract: IPC 4104
Contextual Info: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability

Ck37

Contextual Info: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

HYUNDAI i10

Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
Contextual Info: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access