RAS 510 Search Results

Contextual Info: UG12M23601PBG-6IB 8M Bytes 2M x 36 DRAM 72Pin SIMM based on 1M X 16 General Description Features • • • • • • • • • • Single +5 volt power supply Fast- page Mode (FPM) operation Low power dissipation RAS only refresh cycles CAS before RAS refresh cycles

UG9M43602KBG-6

Abstract: 74g1188
Contextual Info: UG9M43602KBG-6IB 16M Bytes 4M x 36 DRAM 72Pin SIMM based on 4M X 4 General Description Features • • • • • • • • • • Single +5 volt power supply Fast- page Mode (FPM) operation Low power dissipation RAS only refresh cycles CAS before RAS refresh cycles

Contextual Info: UG51C6414EJ T G 8M Bytes (1M x 64) DRAM 168Pin DIMM based on 1M x 4 General Description Features • Single 5.0V +/- 10% power supply • Fast Page Mode (FPM) operation • CAS-before-RAS Refresh operation • RAS-only and Hidden Refresh capability • 1024 refresh cycles every 16 ms

Contextual Info: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write

lan rj45 color code diagram

Abstract: NTP 7100 128X64 graphical LCD screen RTL8111 Realtek PCIe GBE Family Controller cn5010 16 pin diagram of lcd display 16x2 CN5020 Realtek RTL8111 SL3516
Contextual Info: Complete Your Networld www.cas-well.com 3G Wireless Wireless Gateway Media Server VoIP, Video/Image Processing Network Management ( RAS, QoS, Load Balancing ) Security ( Firewall/VPN, IDS/IPS, Anti-Virus, TABLE of CONTENTS 2 4 9 About CA Reference Table

shockley diode

Abstract: diode shockley shockley diode application shockley diode datasheet GA07 Sharp Semiconductor Lasers Quantum Effect Devices 121017 GA04
Contextual Info: Effect of Free-Carrier Absorption on Performance of 808 nm High-Power Laser Diodes K A Bulashevich1,2 , V F Mymrin2 , and S Yu Karpov2,3 1 2 3 Ioffe Physico-Technical Institute, RAS, St.Petersburg, 194021 Russia Soft-Impact, Ltd., P.O.Box 83, St.Petersburg, 194156 Russia

Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A - MARCH 1995 - REVISED JUNE 1995 • Military Operating Temperatur« Range - 55°C to 125°C • Enhanced Page-Mode Operation for Faster Access • Performance Ranges: • CAS-Before-RAS CBR and Hidden

5-101 load 328

Abstract: STI324000D2-60V pd647
Contextual Info: STI324000D2-XXV 72-PIN DIMMS 4M X 32 DRAM DIMM Memory Module FEATURES Performance range: ^RAC ^CAC *RC STI324000D2-60V 60ns 20ns 110ns STI324000D2-70V 70ns 20ns 130ns STI324000D2-80V 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability

Contextual Info: UG52W7416GSG 16M Bytes 2M x 72 DRAM 168Pin DIMM With ECC based on 1M x 16 General Description Features Single 3.3 +/- 0.3V power supply Hyper-Page Mode (EDO) capability CAS-before-RAS Refresh capability 1024 refresh cycles every 16 ms 10/10 Addressing (Row / Column)

B456 F 15

Abstract: B456 1S456 IS456 50n25
Contextual Info: 1S456 1S456 Huh Speed Res~se Type OPIC Light Detector • F-ras 1. High speed response b~~ : TYP.230ns 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ¤ouuina~ (Unit : mm) ■ Amti

32MB SIMM

Abstract: ibm dram
Contextual Info: IBM11D4360E IBM11D8360E IBM11E4360E IBM11E8360E 4M/8M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: : -60 I rac i RAS Access Tim e tcAc CAS Access Tim e : Ua A ccess Tim e From Address I rc Cycle Tim e tpc : 60ns : -70

Contextual Info: UG532W7288JSR 32M x 72 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 16M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES Single 3.3V ± 10% power supply Hyper Page Mode (EDO) operation CAS-before-RAS Refresh capability

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 311 7800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC CAS access time

Contextual Info: IBM0164805B IBM0164805P P re lim in a ry 8 M x 8 13/10 ED O DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode -5 0 tRAc • CAS before RAS Refresh

C503B-RAS-CY0B0AA1

Contextual Info: CLD-CT1079.004 PRODUCT FAMILY DATA SHEET Cree 5-mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN C503B-RBS/RBN/ABS/ABN C503B-RCS/RCN/ACS/ACN PRODUCT DESCRIPTION FEATURES APPLICATIONS Round LEDs offer superior light out- • Size mm : 5 • • Color and Typical Dominant

PP-02-47

Contextual Info: SIEMENS 4M X 16-Bit Dynamic RAM 4k & 8k Refresh HYB 3164160T -50/-60 HYB 3165160T -50/-60 Prelim inary Inform ation • 4 194 304 words by 16-bit organization • 0 to 70 'C operating temperature ■ Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: SIEMENS 3.3V 4M X 4-Bit EDO-Dynamic RAM 2k & 4k-Refresh HYB 3116405BJ/BT L -50/-60/-70 HYB 3117405BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance ÍRAC RAS access time

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Abstract: C503B-ACN-CX0Y0251 C503B-RAN-CY0B0AA2
Contextual Info: Cree 5mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN 15 degree C503B-RBS/RBN/ABS/ABN (23 degree) C503B-RCS/RCN/ACS/ACN (30 degree) Data Sheet Round LEDs offer superior light output for excellent readability in sunlight and dependable performance. It provides extremely stable light output over long

Contextual Info: IB M 1 1 D 2 3 2 5 H 2M x 32 DRAM Module Features Thin outline .104” Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & CMOS compatible Extended Data Out (EDO) access cycle Refresh Modes: RAS-Only, CBR, and Hidden

Contextual Info: 5 - 1 5 Bub interface 5.1 Bus Control General The processor provides on-chip all functions to control memory and peripheral devices, including RAS-CAS multiplexing, DRAM refresh and parity generation and checking. The number of bus cycles used for a memory or I/O access Is also defined by the

C503B-ACN-CW0Y0251

Abstract: ACS 3000 A rbs 3000 C503B-ACN-CW0X0341 cree uv LED C503B-RAN-CY0B0AA1 C503B-RCN-CW0Z0AA2 C503B-RAN-CY0B0AA2 C503B-RCN-CW0Z0AA1 RBS 200
Contextual Info: Cree 5mm Red and Amber Round LED C503B-RAS/RAN/AAS/AAN 15 degree C503B-RBS/RBN/ABS/ABN (23 degree) C503B-RCS/RCN/ACS/ACN (30 degree) Data Sheet Round LEDs offer superior light output for excellent readability in sunlight and dependable performance. It provides extremely stable light output over long

Contextual Info: 5 - 1 5 Bub interface 5.1 Bus Control General Tbe processor provides on-chip a ll functions to control memory and peripheral devices, including RAS-CAS m ultiplexing, D RAM refresh and p arity generation and checking. The number of bus cycles used for a memory or I/O access Is also defined by the

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.

Contextual Info: M O SEL VITELIC V53C511816500 1 M X 1 6 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Orac 50 ns 60 ns 70 ns Max. Column Address Access Time, ^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (Vc) 20 ns