RAMBUS SLAVE Search Results

rambus slave

Abstract: rambus channel
Contextual Info: Rambus Channel Description Overview The Rambus Channel is a high-speed, byte-wide chip-to-chip interconnect designed to facilitate a 500 MHz data transfer rate between individual Rambus devices. As the foundation of every Rambus system, the Channel achieves this 2 nanosecond per byte

RDRAM LG

Abstract: HP16517A Lg rdram rambus LG RDRAM design LG rambus design
Contextual Info: LG Semicon RAMBUS DRAM Design Information Chapter j Introduction to Channel Design The Rambus Channel is a high-speed, byte-wide, synchronous chip-to-chip interconnect designed to achieve 500 MB/ second data transfer rates between Rambus components. As the foundation of every Rambus system, the electrical

rambus RAC

Abstract: Rambus ASIC Cell rambus slave RAMBUS ASIC rambus channel Signal Path designer Rambus RDRAM ASIC RAC RAMBUS
Contextual Info: Rambus ASIC Cell RAC Description Rambus System Overview The Rambus ASIC Cell (RAC™) is a standard macro­ cell used in ASIC designs to interface the core logic of a CMOS ASIC to a high speed Rambus Channel capable of transferring data at 2 nanoseconds per byte. The

Contextual Info: CY24272 Rambus XDR Clock Generator with Zero SDA Hold Time Rambus‚ XDR™ Clock Generator with Zero SDA Hold Time Features • Table 1. Device Comparison Meets Rambus Extended Data Rate XDR™ clocking requirements ■ 25 ps typical cycle-to-cycle jitter

RDRAM RAMBUS

Abstract: RDRAM clock generator
Contextual Info: n RTransceiver D escription Ram bus System O verview The Rambus Transceiver RTransceiver™ is a Secondary Channel isolation device used on all Secondary Rambus Modules (RModules™). By

mkph

Abstract: LG concurrent RDRAM Concurrent RDRAM IIPD488170 IPD488170LVN-A40-9 IPD488170LVN-A50-9 905 nec IC-3384 concurrent rdram NEC NEC RDRAM concurrent
Contextual Info: Rambus DRAM PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |liP D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description H The 18-Megabit Rambus DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized asy|M w o r th y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

Contextual Info: CY24271 Rambus XDR Clock Generator Rambus R XDR™ Clock Generator Features • 300–800 MHz high speed clock support Meets Rambus Extended Data Rate (XDR™) clocking requirements ■ Quad (open drain) differential output drivers ■ Supports frequency multipliers: 3, 4, 5, 6, 8, 9/2, 15/2, and 15/4

Contextual Info: CY24271 Rambus XDR Clock Generator Rambus® XDR™ Clock Generator Features • 300–800 MHz high speed clock support Meets Rambus Extended Data Rate XDR™ clocking requirements ■ Quad (open drain) differential output drivers ■ Supports frequency multipliers: 3, 4, 5, 6, 8, 9/2, 15/2, and 15/4

CY24271

Abstract: CY24271ZXC CY24271ZXCT LK1b XDR Rambus
Contextual Info: CY24271 Rambus XDR Clock Generator Rambus R XDR™ Clock Generator Features • 300–800 MHz high speed clock support Meets Rambus Extended Data Rate (XDR™) clocking requirements ■ Quad (open drain) differential output drivers ■ Supports frequency multipliers: 3, 4, 5, 6, 8, 9/2, 15/2, and 15/4

Contextual Info: CY24272 Rambus XDR Clock Generator with Zero SDA Hold Time Rambus XDR™ Clock Generator with Zero SDA Hold Time Features Meets Rambus Extended Data Rate XDR™ clocking requirements Device Comparison • 25 ps typical cycle-to-cycle jitter ❐ –135 dBc/Hz typical phase noise at 20 MHz offset

NEC RDRAM 36

Abstract: ADR 10 NEC PD488170L PD488170L RDRAM cross reference uPD488170L U/25/20/TN26/15/850/NEC RDRAM 36
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)

NEC RDRAM 36

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

cmos cross reference manual

Abstract: Rambus ASIC Cell
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus TM DRAM RDRAM TM is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

1227D-10

Abstract: ics9220 rambus xdr
Contextual Info: ICS9220 Integrated Circuit Systems, Inc. TM TM Programmable Rambus XDR Clock Generator General Description Features The ICS9220 clock generator provides Programmable TM clock signals to support the Rambus XDR memory subsystem and Redwood logic interface. The ICS9220

Rambus RDRAM ASIC

Abstract: RDRAM cross reference NEC RDRAM 36 REF05
Contextual Info: PRELIMINARY UATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

uPD488031

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)

REF05

Contextual Info: PRELIMINARY bATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

gm73v1892ah-16l

Abstract: gm73v1892ah16l GM73V1892AH LG concurrent RDRAM GM73V1892 concurrent rdram LG 29C30 LG rdram concurrent LG GM73
Contextual Info: LG oSemicon e m i w u i l Co O O . . LLtd .I U . GM73 V1892AH16L GM73V1892AH17L 2,097,152 WORDS x79 BIT Rambus DRAM Description The GM 73V1892AH16L /' GM73V1892AH17L Rambus Dynamic Random Access Memory RDRAM

uPD488170L

Abstract: UPD488170 0005 adr cmos cross reference manual uPD48817 PD488170L
Contextual Info: PRELIMINARY DATA SHEET PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus TM DRAM RDRAM TM is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

PD488170L

Abstract: NEC PD488170L 6A50 uPD488170LG NEC RDRAM 36 UPD488170LG6
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

concurrent rdram NEC

Abstract: NEC rdram concurrent 16MB NEC RDRAM concurrent concurrent RDRAM 72 Concurrent RDRAM concurrent rdram LG NEC concurrent rdram NEC Rambus LG concurrent RDRAM
Contextual Info: NEC MOS INTEGRATED CIRCUIT ju ,P D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremeiy-high-speed CMOS DRAM organized as.gM woi [by 4 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signin

745 B36 diode

Abstract: micron sensor spd 357 RM01 MT8VR6416A
Contextual Info: PRELIMINARY‡ 32, 64, 128 MEG x 16/18 RAMBUS RIMM MODULES RAMBUS RIMM MODULE MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/modds.html

Contextual Info: ICS9220 Integrated Circuit Systems, Inc. TM TM Programmable Rambus XDR Clock Generator General Description Features The ICS9220 clock generator provides Programmable TM clock signals to support the Rambus XDR memory subsystem and Redwood logic interface. The ICS9220