RADAR PALLET Search Results
RADAR PALLET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLL1214-35 |
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L-band radar LDMOS driver transistor |
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AWR6443ABGABLQ1 |
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Single-chip 60-GHz to 64-GHz automotive radar sensor integrating MCU and radar accelerator 161-FCCSP -40 to 125 |
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AWR6443ABGABLRQ1 |
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Single-chip 60-GHz to 64-GHz automotive radar sensor integrating MCU and radar accelerator 161-FCCSP -40 to 125 |
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IWR1843AQGABL |
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Single-chip 76-GHz to 81-GHz industrial radar sensor integrating DSP, MCU and radar accelerator 161-FC/CSP -40 to 105 |
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AWR6843ABGABLQ1 |
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Single-chip 60-GHz to 64-GHz automotive radar sensor integrating DSP, MCU and radar accelerator 161-FCCSP -40 to 125 |
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RADAR PALLET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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IBP2729MH300 IBP2729MH300 IBP2729MH300-REV-NC-DS-REV-A | |
IBP2731M200Contextual Info: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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IBP2731M200 IBP2731M200 IBP2731M200-REV-NC-DS-REV-B | |
Contextual Info: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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IBP3135MH200 IBP3135MH200 IBP3135MH200-REV-PR1-DS-REV-NC | |
Contextual Info: Part Number: Integra IBP3134M220 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3134M220 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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IBP3134M220 IBP3134M220 IBP3134M220-REV-NC-DS-REV-NC | |
Contextual Info: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems |
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IBP3135M150 IBP3135M150 IBP3135M150-REV-NC-DS-REV-NC | |
bd 142 transistorContextual Info: Part Number: IBP2934M190 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2934M190 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 2.9-3.4 GHz. |
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IBP2934M190 IBP2934M190 IBP2934M190-REV-NC-DS-REV-NC bd 142 transistor | |
tegra 2
Abstract: 300 watts amplifier s-band tegra radar amplifier s-band s-band 50 Watt power amplifier 300w amplifier 2 Watt S-Band Power Amplifier ibp2729m300 tegra 3 d5548
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IBP2729M300 IB2729M300 IBP2729M300 IBP2729M300-REV-NC-DS-NC tegra 2 300 watts amplifier s-band tegra radar amplifier s-band s-band 50 Watt power amplifier 300w amplifier 2 Watt S-Band Power Amplifier tegra 3 d5548 | |
Contextual Info: Part Number: Integra IBP3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar Technology − Ultra-high fT Part number IBP3134M25 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. Operating under the pulse |
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IBP3134M25 IBP3134M25 IBP3134M25-REV-NC-DS-REV-NC | |
Radar pallet
Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
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BLS6G2933P-200 Radar pallet RO6006 radar amplifier s-band ATC100A ATC100B | |
Contextual Info: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance |
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BLS6G2933P-200 | |
Contextual Info: BLL6H1214P2S-250 LDMOS L-band radar power module Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power module intended for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. |
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BLL6H1214P2S-250 | |
1214-550P
Abstract: Radar pallet L-Band 1200-1400 MHz
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1214-550P 1214-550P Radar pallet L-Band 1200-1400 MHz | |
Radar pallet
Abstract: L-Band 1200-1400 MHz 1214-550P
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1214-550P 1214-550P Radar pallet L-Band 1200-1400 MHz | |
700W
Abstract: L-Band 1200-1400 MHz
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1214-700P1 1214-700P1 700W L-Band 1200-1400 MHz | |
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L-Band 1200-1400 MHz
Abstract: 1214-700P Radar pallet
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1214-700P 1214-700P L-Band 1200-1400 MHz Radar pallet | |
Radar pallet
Abstract: L-Band 1200-1400 MHz RESISTANCE RF 800W 1214-800P
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1214-800P 1214-800P Radar pallet L-Band 1200-1400 MHz RESISTANCE RF 800W | |
Radar pallet
Abstract: MAPPST2933-190M
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MAPPST2933-190M Radar pallet MAPPST2933-190M | |
Contextual Info: MAPP-002729-300M00 Radar Pulsed Power Pallet 300W, 2.7-2.9 GHz M/A-COM Products Released Outline Drawing Features • • • • • • • Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level |
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MAPP-002729-300M00 36VCC, 1x106 MAPP-002729-300M00 | |
MAPPST2933-190MContextual Info: Preliminary Datasheet DS042806 RADAR PULSED POWER PALLET 190 Watts, 2.9 – 3.3 GHz 200 s Pulse, 10% Duty MAPPST2933-190M Preliminary Outline Drawing FEATURES • • • • • Input and output matched to 50Ω RC bias circuit included Dual NPN silicon class C power transistors |
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DS042806 MAPPST2933-190M 190Wpk, 190Wpk) MAPPST2933-190M | |
Radar pallet
Abstract: MAPP-002729-300M00 radar amplifier s-band 2.7 2.9 GHZ
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MAPP-002729-300M00 36VCC, 1x106 MAPP-002729-300M00 Radar pallet radar amplifier s-band 2.7 2.9 GHZ | |
radar amplifier s-band 2.7 2.9 GHZ
Abstract: MAPP-002729-300M00
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MAPP-002729-300M00 300Wpk, DS2007-01-03 36VCC, 1x106 MAPP-002729-300M00 radar amplifier s-band 2.7 2.9 GHZ | |
Contextual Info: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and |
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JESD204A | |
Contextual Info: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macom.com PRESS RELEASE MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size |
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MAPG-002729-350L00, MAMG-002735-085L0L, MAMG-002735-030L0L, | |
Contextual Info: September 30, 2014 MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size 85 Wpk GaN Hybrid Amplifier, MAMG-002735-085L0L, offers integrated, fully matched SMT solution |
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MAPG-002729-350L00, MAMG-002735-085L0L, MAMG-002735-030L0L, com/multimedia/home/20140930005146/en/ |