RAA MARKING CODE Search Results

wf vqe 14 e

Abstract: Wf vqe 14 WF vqe 14 c wf vqe 13 d wf vqe 21 CQY8 wf vqe 14 d
Contextual Info: CQY80 N G Vishay Telefunken T Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

DT1122G

Abstract: dt1122 TCDT1120 DT1122G1
Contextual Info: TCDT1120 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis­ tor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

ELPIDA 512MB NOR FLASH

Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
Contextual Info: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

et1600

Contextual Info: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse­ nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.

MCP 256M nand toshiba

Abstract: Diskonchip QUALCOMM Reference manual TRUEFFS TSOP 48 thermal resistance type1 MARKING G3 MCP 256M nand micron MICRON mcp transistor marking A9M MS06-D9SD8-B3
Contextual Info: DiskOnChip -Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, September 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

PD48

Abstract: uPD481850GF-A12-JBT
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write

MD4832-D512-V3Q18-X-P

Abstract: MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual
Contextual Info: DiskOnChip -Based MCP Including Mobile DiskOnChip G3 and Mobile RAM Data Sheet, February 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

gck12

Contextual Info: WED9LAPC2C16V4BC White Electronic Designs 512K x 32 SSRAM / 512K x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous

PD48

Abstract: PD481850 lm 512
Contextual Info: DATA SHEET DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function

512k x 8 chip block diagram

Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
Contextual Info: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.

WED9LAPC2B16P8BC

Abstract: WED9LAPC2C16V8BC
Contextual Info: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous

dba1

Abstract: diode MARKING CODE A9 UPD481 diode MARKING A9
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.

UPD4811650GF-A10-9BT

Abstract: 0z1 marking
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.

Contextual Info: WED48S8030E 2M x 8 Bits x 4 BANKS SYNCHRONOUS DRAM FEATURES DESCRIPTION „„ Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the use of system clock, I/O

Contextual Info: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of

EDI416S4030A

Contextual Info: White Electronic Designs EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation

WED48S8030E

Abstract: WED48S8030E10SI WED48S8030E8SI
Contextual Info: White Electronic Designs WED48S8030E 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 125, 100MHz „ SDRAM CAS# Latency = 2 The WED48S8030E is 67,108,864 bits of synchronous high

WED48S8030E

Abstract: WED48S8030E10SI WED48S8030E8SI
Contextual Info: WED48S8030E White Electronic Designs 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 125, 100MHz  SDRAM CAS# Latency = 2  Burst Operation The WED48S8030E is 67,108,864 bits of synchronous high

EDI416S4030A

Abstract: 1Mx16bits
Contextual Info: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 100, 83MHz  SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) 

EDI416S4030A

Contextual Info: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with

D7678

Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
Contextual Info: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise

SRA2210SF

Abstract: KSR-2014-000
Contextual Info: SRA2210SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

13001 TRANSISTOR equivalent

Abstract: 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000
Contextual Info: SRA2210S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process