RA7D Search Results

X-TAL reference

Abstract: ra7d
Contextual Info: SSI 32D539 ¿ m m s y s b m s Data Synchronizer & 1,7 RLL ENDEC ' A TDK G rou p /C o m pany Preliminary Data December 1991 DESCRIPTION Fast a c q u is itio n phase locked lo o p w ith zero The circuit is intended to be used as a data/clock recovery circuit for 1, 7 RLL code in hard disk drive

samsung ddr3

Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

A110 E

Abstract: TSW11
Contextual Info: Preliminary 512Mb DDR3 SDRAM K4B510846E 512Mb E-die DDR3 SDRAM Specification Revision 0.5 December 2006 CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

K4B510846E-ZC

Contextual Info: Preliminary Unbuffered DIMM DDR3 SDRAM DDR3 SDRAM Specification January 2007 revision 0.1 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

CRCW12062001FT

Abstract: R8085 3296W001501 B51-351-000-220 d9483 c5156
Contextual Info: A N A LO G D E V IC E S FEATURES 140 MSPS Guaranteed Conversion Rate 100 MSPS Low Cost Version Available 330 MHz Analog Bandwidth 1 V p-p Analog Input Range Internal +2.5 V Reference Differential or Single-Ended Clock Input 3.3 V /5 .0 V Three-S tate CMOS Outputs

Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

Contextual Info: ANALO G D E V IC E S FEATURES 140 MSPS Guaranteed Conversion Rate 100 MSPS Low Cost Version Available 330 MHz Analog Bandwidth 1 V p-p Analog Input Range Internal +2.5 V Reference Differential or Single-Ended Clock Input 3.3 V /5 .0 V Three-S tate CMOS Outputs

K4B1G1646C-ZCF7

Abstract: jedec 46c DDR3-1066 K4B1G0446C-ZCF7 K4B1G0846C-ZCF7 samsung ddr3 K4B1G1646C atxp1 K4B1G0446C
Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46C 1Gb C-die DDR3 SDRAM Specification Revision 1.0 June 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,