RA600 Search Results

LTN150XG-L05

Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
Contextual Info: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

Contextual Info: D 7 8 9 4 S M a x i m u m Part Number Actual Part Marking Continuous Rated Voltaae AC RMS DC Volts Volts R a t i n o s Rated Single Pulse Transient Energy Peak 10/1000ps 8/20ps Joules Amps E E Electrical Varistor Voltage @1mA DC Min Max Volts Volts S Characteristics

B503 F 30

Abstract: ULN2003 AS INVERTER ULN2003 PIN DIAGRAM configuration B605 ULN2003 current buffer 1N4148V B314 uln2003 buffer RA404 how to use uln2003 to drive relays
Contextual Info: EDP-AM-DIO54 Digital IO Module User Manual This document contains information on the DIO54 digital IO module for the RS EDP system. Version v5.0, 10/06/2010 EDP-AM-DIO54 Manual Contents 1. 1.1 1.2 1.3 1.4 1.4.1 1.4.2 1.4.3 1.4.4 1.4.5

75B5M

Contextual Info: WET TANTALUM: All Tantalum Assemblies Type RA Tansitor Type RA capacitors are assemblies using tantalum cased, hermetically sealed capacitors connected in parallel for higher capacitance values. The assemblies are housed in a metal case, which is also hermetically sealed. A standard list

tansitor

Contextual Info: WET TANTALUM: All Tantalum Assemblies Type RA Tansitor Type RA capacitors are assemblies using tantalum cased, hermetically sealed capacitors connected in parallel for higher capacitance values. The assemblies are housed in a metal case, which is also hermetically sealed. A standard list

RA1100

Abstract: ZOV131 V151R varistor 102m
Contextual Info: 34m m Dual — Square Configuration Maida Style Number Recognitions To Safety Agency Standards M inim um Marking Mechanical Dimensions Y +/- 0.040" Y +/- 1.02mm T MAX. ZOV131 RA310 ZOV141RA330 ZO V151RA360 ZOV181RA39Û ZO V211RA430 ZO V231RA46Û ZOV251RA490

Contextual Info: P h ilip s S em iconductors M ^53*131 00317S3 bflO >| NPN 1 GHz video transistors BFQ236; BFQ236A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN • Low output capacitance 1 • High gain bandwidth product 2 base • Good thermal stability

Contextual Info: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. • Low output capacitance • High gain bandwidth