RA SOT323 Search Results

Contextual Info: Section 2: Bipolar Transistors lo w S a tu ra tio n T ra n s is to rs up to I 0 0 V o lts Designers w orking in the fast m oving application sectors of Power Management, Personal Portables and Consumer goods are constantly striving to physically downsize their

gt73

Abstract: LS T73
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT720 ISSUE 1 - SEPTEMBER 1998_ FEATU RES * 500mW POWER DISSIPATION * * * * 1A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 1A (p u lsed )

t718

Abstract: t618
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ISSU E 1 - SEPTEM BER 1998 ZUMT718 - FEATU RES 500mW POWER D ISSIPA TIO N * lc CONT 1A * * * * 3 A Peak Pu lse C u rren t Exce lle n t H FE C h a ra cte ristics U p T o 3 A (p u lsed )

T617

Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZU M T717 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc CONTI.5A * * 3 A P eak P u ls e C u rre n t E x c e lle n t H pE C h a ra c te ris tic s U p T o 3 A (p u ls e d )

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )

ZUMT617

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.5 A * * 5 A P eak P u ls e C u rre n t E x c e lle n t H FE C h a ra c te ris tic s U p T o 5 A (p u ls e d )

Contextual Info: SOT323 NPN SILICON PLANAR ZUM TQ 31A VHF/UHF T R A N SIST O R S ISSU E 1 - DECEMBER 1998_ P A R T M A R K IN G D E T A IL - T11 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM BO L C o lle c to r-B a se V o lta g e VALUE VcBO 30 C o lle c to r-E m itte r V o lta g e

PC557

Abstract: bc5588 bc557 siemens bc548 sot23 BC182 BC547 BC648 BC557 SOT23 BC212
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching C h a ra c te ris tic s T. =25°C M a x im u m R a tin g s VCEO ' c N=NPN Pt fr ^CEX VCBO VCEX mW MHz nA V 200 200 200 ( ' 206" 170 i 70 170; 170 250

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAV99 DIODE H I GH CON DU CT AN CE U LT RA FAST DI ODE ̈ EQU I V ALEN T For 3 Pin Package For 6 Pin Package ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R

marking RK sot323

Abstract: N5212 N5211
Contextual Info: Order this data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esisto r T ra n s is to r NPN Silicon Surface Mount Transistor W ith M onolithic Bias Resistor N etw o rk M U N5211T1 M U N5212T1 M U N5213T1 M U N 5214T1 This new series of digital transistors is designed to replace a single device and

F30h

Contextual Info: SOT323 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTOR ZUMT850B ZUMT850C ISSUE 1 - DECEMBER 1998 P a rtm a rk in g D e ta il: ZU M T850B -T 1 B ZU M T850C -T 2 1 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL C ollecto r-B ase V o lta g e VALUE U N IT VcBO 50

Contextual Info: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e

Contextual Info: SOT323 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS ZUMT860B ZUMT860C ISSUE 1 - DECEMBER 1998 P a rtm a rk in g D e ta il: ZU M T860B T2B ZU M T860C T22 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL C ollecto r-B ase V o lta g e VALUE U N IT VcBO -50 V C o lle c to r-E m itte r V o lta g e

MARKING CODE 42t

Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

Contextual Info: SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 - DECEMBER 1998 Q_ PARTM ARKING DETAIL — T3 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e VcBO 30 V V C o lle c to r-E m itte r V o lta g e

Contextual Info: ZUMD54 ZUMD54C SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 - DECEMBER 1998 -1 1 « A 3 2 3 SINGLE COMMON CATHODE Device Type: ZUMD54 Device Type: ZUMD54C Partmarking Detail: D8 Partm arking Detail: D8C FEATURES: L o w V F &

fmmt417

Abstract: FMMT415 ZTX415 a2531
Contextual Info: Section S: Bipolar Transistors Avalanche Transistors Available in SOT23, SOT323 and E-Line packages the Avalanche transistors offer designers optim um solutions fo r both surface m ount or through hole assembly.

Contextual Info: SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZUMT807-25 ISSUE 1 - DECEMBER 1998_ P A R T M A R K IN G D E T A ILS -T 8 C O M P L E M E N T A R Y TY P E - Z U M T 8 1 7 -2 5 ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE U N IT C o lle c to r-B a s e V o lta g e

Contextual Info: SOT323 NPN SILICON PLANAR ZUMTS17 ZUMTS17H RF TRANSISTORS ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - ZU M TS17 -T 4 Z U M T S 17H -T 4 H ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e VcBO VALUE U N IT 25 V

F2T651

Contextual Info: Section S: Bipolar Transistors lo iij The Zetex Low Saturation Voltage Transistors offer excellent performance solutions in surface mounted packages SOT223, SOT89, SOT23, SOT323 and the compact through hole E-Line package. S a:urationTransistors up to I 0 0 V o lts

Contextual Info: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSU E 1 - DECEMBER 1998_ FEATU RES * A v a la n c h e m ode operation * 50 A Peak a v a la n ch e current * Lo w in d u ctan ce p a cka g in g A P P L IC A T IO N S * La se r LE D d rive rs

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS70SB40 series PINNING • L o w fo rw a rd v o lta g e 1PS70SB. PIN • G u a rd ring p ro te c te d • V e ry s m a ll S M D p a c k a g e • L o w d io d e c a p a c ita n c e .