R3305 TRANSISTOR Search Results

R3305 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

R3305 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
R3305 transistor Contextual Info: N AMER PHILIPS/DISCRETE DbE D bb53T31 0014^43 3~" • A MAINTENANCE TYPE for new design use LTE21015R LKE21015T T - 3 3 -OS’ MICROW AVE LINEAR POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.	OCR Scan	bb53T31 LTE21015R) LKE21015T FO-53. R3305 transistor	PDF
R3305 transistor Abstract: R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FJN3303 Contextual Info: FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted	Original	FJN3303 FJN3303 FJN3303BU FJN3303TA R3305 transistor R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	PDF
LKE21015T Abstract: LTE21015R Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 0014^43 3 ■ II ' MAINTENANCE TYPE for newdesignuse LTE21015R J LKE21015T 3 3 ~ ¿7S ' I MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.	OCR Scan	bb53T31 LKE21015T LTE21015R) LKE21015T LTE21015R	PDF
R3305 transistor Contextual Info: FJN3305R NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJN4305R Application • Switching Application (Bias Resistor Built in)	Original	FJN3305R FJN4305R FJN3305RTA R3305 FJN3305R R3305 transistor	PDF
Contextual Info: FJN3305R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built in bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJN4305R Application • Switching Application (Bias Resistor Built in)	Original	FJN3305R FJN4305R FJN3305RTA R3305	PDF
r3305 Abstract: R3305 transistor Contextual Info: FJN3305R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.	Original	FJN3305R FJN3305RTA R3305 r3305 R3305 transistor	PDF
Contextual Info: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A QQ14D5	PDF
OC1016 Abstract: SFE 1730 LTE21025R LTE21050R Contextual Info: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R	OCR Scan	Lb53T31 LTE21025R FO-41B) OC1016 SFE 1730 LTE21025R LTE21050R	PDF
bel 187 transistor Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn Contextual Info: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.	OCR Scan	LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn	PDF
schematic diagram tv sony 21 trinitron Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV	Original	KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112	PDF
ISL6259 Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01	Original		PDF