QUANTUM Search Results

NX7526BF-AA

Abstract: NX7526BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well

PIN Photodiode 1550nm

Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
Contextual Info: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

nec 501 t

Abstract: NX8563LA NX8563LA-AZ NX8563LAS
Contextual Info: DATA SHEET NEC's DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS NX8563LA Series FEATURES DESCRIPTION • PEAK OUTPUT POWER NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser

GR-468-CORE

Abstract: NX7313UA NX7313UA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP TOSA NX7313UA FOR GIGABIT ETHERNET APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7313UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter optical subassembly (TOSA) with InGaAs monitor PIN-PD in a receptacle type package designed for LC type SFF/SFP transceiver

1550nm laser diode

Abstract: sxxxx InGaAs Photodiode 1550nm
Contextual Info: 1550nm Laser Diode Module C-15-001-T/R/PX-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-0009853

PIN Photodiode 1550nm sensitivity -55

Abstract: PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01
Contextual Info: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 5V) , Bi-directional Diplexer Optical Module C-15/13-D01/03/05- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

NX7527BF-AA

Abstract: NX7527BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION 120 mW MIN NX7527BF-AA FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW at IFP = 1000 mA, NEC's NX7527BF-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate

Contextual Info: Analog 1310 nm MQW-DFB Laser Diode Module C-13-DFBA-PX-SXXXI/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at 0 to +70ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-000983

Contextual Info: SIEMENS FEATURES SFH 484501 5 X 40 STRIPE ARRAY Package Dimensions in mm • GRINSCH-Quantum-Well Structure with Dielectric Coating Asymmetrical • • • • • Monochromatic Radiation Source High Output Power Mounted on a 10 mm Row High Package Density (1 w/cm)

NX7328BF-AA

Abstract: NX7328BF-AA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well

TOSA MQW Laser diode SFP

Abstract: GR-468-CORE NX7315UA NX7315UA-AZ STM-16
Contextual Info: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP TOSA NX7315UA FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.6 mW NEC's NX7315UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode transmitter

C-13-001-XX-SXXXX

Abstract: tr 13001 C-13-001-RX-SXXXX 13001 K/SP 13001 13001 s
Contextual Info: 1310nm Laser Diode Module C-13-001-T/R/PX-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • Built-in InGaAs monitor photodiode • Hermetically sealed active component • Complies with Bellcore TA-NWT-0009853

13-DXX-PX-SXXX

Abstract: InGaas PIN photodiode InGaAs Photodiode 1550nm dfb laser diode 1310nm -1550nm
Contextual Info: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 3.3V) , Bi-directional Diplexer Optical Module C-15/13-D02/04/06- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current

Contextual Info: P/N: C-13-1315T-01-XX 1310nm Laser Diode Transmitter Features l Laser diode with multi-quantum-well structure l Un-cooled operation at -40~+85° C l For Single-mode Application l High Optical Power l High Speed Packaging l 8 Pin Package with ST Port Application

Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are

SCHEMATIC touch dimmer

Abstract: SCHEMATIC simple dimmer zero crossing dimmer touch sensitive lamp switch SCHEMATIC dimmer 240VAC touch dimmer touch dimmer Triac dimmer schematic diagram TRIAC dimmer touch touch dimmer IC
Contextual Info: E116 USER'S GUIDE Overview The E116 evaluation board is designed for rapid evaluation of Quantum’s QT116 QTouch lamp controller IC. The board operates in both two and three wire modes, from either 110 or 240VAC supplies at either 50 or 60Hz. Onboard option jumpers

OL5204N-25

Abstract: OL5201N-25
Contextual Info: E2V0020-37-X1 ¡ electronic components OL5201N-25, OL5204N-25 LASER DIODES OL5201N-25, OL5204N-25 1.55 mm High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL5201N-25 and OL5204N-25 are 1.55 mm, extremely high-power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum-Well MQW structure laser diodes

BER10-10

Contextual Info: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s PINプリアンプレシーバ PINプリアンプレシーバ 2.5Gbit/s ROSA PIN Preamp Receiver Modules

GR-468-CORE

Abstract: NX7312UA NX7312UA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS NX7312UA FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Pf = 0.2 mW NEC's NX7312UA is a 1310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter

Plastic 32-pin 300 mil SOIC

Abstract: STK14C88-345 303F STK14C88-3
Contextual Info: STK14C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • “Hands-off” Automatic STORE with External 68µF Capacitor on Power Down • STORE to EEPROM Initiated by Software or AutoStore™ on Power Down

10 gb laser diode

Abstract: Hitachi DSA0095 HL1511AF diode hitachi
Contextual Info: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

STK14C88

Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
Contextual Info: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems

Si apd photodiode

Abstract: APD bias gain military Proximity Sensor APD, applications, bias supply Photodiode apd high sensitivity Photodiode apd amplifier LIDAR Photodiode Si apd high sensitivity Photodiode apd LIDAR detector
Contextual Info: SD012-44-62-221 Si Avalanche Photodiode TIA Hybrid The SD012-44-62-221 device features a high-speed silicon avalanche photodiode APD hybridized with a high gain transimpedance amplifier (TIA) in a sturdy TO-5 package. The device exhibits extremely high sensitivity thanks to excellent quantum