QUAD N CHANNEL FET Search Results

Contextual Info: Quad Driver for GaAs FET Switches and Attenuators SWD-119 V 5.00 Features SO-16 n High Speed CMOS Technology n Quad Channel n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package Description The SWD-119 is a quad channel driver used to translate

SWD-109

Abstract: SWD-119 SWD-109RTR SWD-109TR SWD-119RTR SWD-119TR SWD-109-PIN Quad N CHannel Fet
Contextual Info: SWD-109/119 Single/Quad Drivers for GaAs FET Switches and Attenuators Features SO-8 SWD-109 n High Speed CMOS Technology n Single Channel (SWD-109) n Quad Channel (SWD-119) n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package

Contextual Info: SWD-109/119 Single/Quad Drivers for GaAs FET Switches and Attenuators Features SO-8 SWD-109 n High Speed CMOS Technology n Single Channel (SWD-109) n Quad Channel (SWD-119) n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package

MPS 0715

Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
Contextual Info: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR

VQ3001/VQ7254

Contextual Info: TQ3001 VQ3001 VQ7254 Surface Mount | N- and P-Channel Quad Power MOSFET Arrays Ordering Information R b v dss/ dS VGS th (ON) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad 40V 3Q

sis 962

Contextual Info: VQ1004 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss/ BV ogs 60V Order Number / Package •D ON n DS(ON) (max) 3.5Q (min) Quad Ceramic DIP* 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side b ra zed ceram ic D IP

Contextual Info: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad

VN0106N9

Abstract: VN0104N2 VN0109n5 VN01A VN0106N5
Contextual Info: ^ Supertex inc . V N 01A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss / b v dgs Order Number / Package ^DS O N '□(ON) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE' VN0104N2 VN0104N9 VN0104N3

Contextual Info: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS3VH126

Abstract: QS3VH126
Contextual Info: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

3vh126

Contextual Info: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: IDTQS3VH126 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

A773* Transistor

Abstract: fl7732c VQ1001P
Contextual Info: VQ1001 ^ Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BV DSS/ ^DS O N b v dgs (max) (min) Quad Ceramic DIP* 30V i.o a 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceramic DIP Advanced DMOS Technology

Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS3VH125

Abstract: QS3VH125
Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS3VH125

Abstract: QS3VH125
Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH125 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

FDMQ8203

Contextual Info: FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in

d2q transistor

Contextual Info: V Q 10 04 LJ S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BV dss / ^DS ON) Order Number / Package I d (ON) B V qcs (max) (min) Quad Ceramic DIP' 60V 3.5Ì2 1.5A VQ1004P Quad Plastic DIP

Contextual Info: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package b v dss/ ^D S O N b v dgs (max) (min) Quad Ceramic DIP* 30V 1.0Q 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceram ic DIP Advanced DMOS Technology High Reliability Devices

VN0106N5

Abstract: VN01A VN0109N5 siemens 3FT VN0104N2 Vn0104N5 VN0106N9 VN0106N2 FAST DMOS FET Switches VN0106N
Contextual Info: VN01A tìì Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Standard Commercial Devices BVDSS/ ^ D S O N l[>(ON) BVqqs (max) (min) Order Number / Package TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE’ VN0104N2 VN0104N9

Contextual Info: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING

IDTQS3VH126

Abstract: QS3VH126
Contextual Info: IDTQS3VH126 3.3V QUAD ACTIVE HIGH SWITCH FOR HOT SWAP APPLICATIONS INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 3.3V QUAD ACTIVE HIGH SWITCH FOR HOT SWAP APPLICATIONS HOTSWITCH IDTQS3VH126 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

Contextual Info: VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package b v dss/ ^DS ON b v dgs (max) (min) Quad Ceramic DIP* 60V 3.5Q 1.5A V Q 10 04P I d (ON) Quad Plastic DIP V Q 10 04J * 14 pin side brazed ceram ic DIP

Contextual Info: FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 m: P-Channel: -80 V, -6 A, 190 m: Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in „ Max rDS on = 110 m: at VGS = 10 V, ID = 3 A

N06A

Contextual Info: T N 06A Ljf Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package l i BVdss/ R dS<ON max) b v dgs V gs(ih) (max) TO-39 TO-92 DICE* TO-220 Quad P-DIP Quad C-DIP* 60V