QFN 12 X 12 Search Results

JESD-30

Abstract: QFN-48 jedec package MO-220 jesd MO-220 qfn 48 C212 b237
Contextual Info: Package Dimensions QFN 48 Chrontel Package Dimensions TOP VIEW BOTTOM VIEW B A 48 37 1 36 B/2 37 F 48 48 A 1 D C C/2 12 13 12 25 25 13 24 24 H E D J G I 48 Pin QFN Package Table of Dimensions No. of Leads 48 7 X 7 mm MilliMIN meters MAX A 7 B 2.25 5.25 C

MAX4704

Abstract: MAX4704EGC MAX4704EUB
Contextual Info: 19-2240; Rev 0; 10/01 Low-Voltage, 60Ω, 4:1 Analog Multiplexer in QFN Features ♦ 3mm x 3mm 12-Pin QFN Package ♦ Guaranteed On-Resistance: 60Ω max (+2.7V supply) 40Ω (max) (+5V supply) ♦ Guaranteed Match Between Channels: 3Ω (max) ♦ Guaranteed Flatness Over Signal Range:

MAX4695

Abstract: MAX4695EGC MAX4695EUB
Contextual Info: 19-2044; Rev 0; 5/01 Low-Voltage, 60Ω Dual SPDT Analog Switch in QFN Features ♦ 3mm x 3mm 12-Pin QFN Package ♦ Guaranteed On-Resistance: 60Ω max (+2.7V supply) 25Ω (typ) (+5V supply) ♦ Guaranteed Match Between Channels: 3Ω (max) ♦ Guaranteed Flatness Over Signal Range:

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications  Low Insertion Loss: 0.30dB at 1980MHz  High Isolation: 37dB at 2GHz  High IP3: >75dBm at 2GHz

AH215-S8

Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900 l475
Contextual Info: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package Applications x Final stage amplifiers for

RFSW1012SQ

Abstract: RF238 RFSW1012PCK-410 RFSW1012 RF-1 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz RFSW1012PCK-411 rf switch spdt
Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

rf switch spdt

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

QFN16

Abstract: QFN-16 X2-16 13E12
Contextual Info: PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR QFN-16 4 mm x 4 mm BODY C1 X2 16 15 14 13 E 12 1 2 C2 11 Keep Out Zone Y2 3 10 4 9 5 6 7 8 Y1 X1 Note QFN-16 (4 x 4) has an exposed center pad that must not come into contact with any metalized structure on the PCB. This area is considered

MO-220

Contextual Info: Package Outline 12-Lead QFN Package Outline K6 4.00x4.00mm body, 1.00mm height (max), 0.80mm pitch D2 D 12 1 Note 1 (Index Area D/2 x E/2) 12 1 Note 1 (Index Area D/2 x E/2) e E E2 b View B Top View Bottom View Note 3 θ A A3 L Seating Plane A1 L1 Note 2

MO-220

Contextual Info: Package Outline 12-Lead QFN Package Outline K7 3.00x3.00mm body, 0.80mm height (max), 0.50mm pitch D2 D 12 1 Note 1 (Index Area D/2 x E/2) 12 1 Note 1 (Index Area D/2 x E/2) e E E2 b View B Top View Bottom View Note 3 θ A A3 L Seating Plane A1 L1 Note 2

MO-220

Abstract: JEDEC Drawing MO-220 qfn JEDEC MO 220 WEED
Contextual Info: Package Outline 12-Lead QFN Package Outline K7 3.00x3.00mm body, 0.80mm height (max), 0.50mm pitch D2 D 12 1 Note 1 (Index Area D/2 x E/2) 12 1 Note 1 (Index Area D/2 x E/2) e E E2 b View B Top View Bottom View Note 3 θ A A3 A1 L Seating Plane L1 Note 2

Contextual Info: RF3394 RF3394General Purpose Amplifier GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 12-Pin, 3 x 3 ̈ DC to >6000MHz Operation GND GND GND Features ̈ Internally Matched Input and Output 12 11 10 ̈ 20dB Small Signal Gain ̈

MO-220

Contextual Info: Package Outline 12-Lead QFN Package Outline K6 4.00x4.00mm body, 1.00mm height (max), 0.80mm pitch D2 D 12 1 Note 1 (Index Area D/2 x E/2) 12 1 Note 1 (Index Area D/2 x E/2) e E E2 b View B Top View Bottom View Note 3 θ A A3 L Seating Plane A1 L1 Note 2

CZ12

Abstract: CZ16 12-pin
Contextual Info: At a glance IP425xCZ8-4/CZ12-6/CZ16-8 Package Ultra Thin Leadless Package UTLP - HXSON12: plastic thermal enhanced extremely thin small outline package; 12 terminals; body 1.35 x 2.5 x 0.5 mm QFN compatible plastic package with 0.4 mm pitch Applications

QFN-12

Abstract: RF5501 LNA in WLAN SiGE wlan LNA WLAN MESFET
Contextual Info: RF5501 Proposed 3.3 V, SWITCH AND LNA FRONT END SOLUTION Package Style: QFN, 12-pin, 2 mm x 2 mm x 0.5 mm Features „ „ „ „ Single Die Front End Solution Single Supply Voltage 3.0 V to 4.5 V Integrated SP3T Switch and LNA with Bypass Typical gain is 12 dB and

SUF-8533SR

Abstract: pHEMT operating junction temperature DS110718
Contextual Info: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier

Contextual Info: RF3396 RF3396General Purpose Amplifier GENERAL PURPOSE AMPLIFIER „ Internally Matched Input and Output GND DC to >6000MHz Operation GND „ 12 11 10 es ig n Features GND RoHS Compliant & Pb-Free Product Package Style: QFN, 12-Pin, 3 x 3 NC 1 „ 22dB Small Signal Gain

SUF-8533

Abstract: gp bjt
Contextual Info: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier

Contextual Info: RF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH Package Style: QFN, 12-pin, 2.0 mm x 2.0 mm x 0.55 mm Features      Broadband Performance Low Frequency to 3.5 GHz Very Low Insertion Loss 0.25 dB Typ at 0.90 GHz 0.45 dB Typ at 1.90 GHz

qfn16

Abstract: QFN16L QFN16-3 16L3 MF-PO-D-0007
Contextual Info: PACKAGE OUTLINE DRAWING QFN16-3 3mm x 3mm MF-PO-D-0007 revision 1.0 TM Monolithic Power Systems TM 2.95 (0.116) 3.05 (0.120) 1.500 (0.059) 1.600 (0.063) exp. pad 0.350 (0.014) 0.450 (0.018) 13 Pin 1 Identification 16 1 12 Pin 1 Identification QFN 16L (3 X 3 mm)

QFN-12

Abstract: FMM5309ZU RF Switch qfn RF1002
Contextual Info: FMM5309ZU Single Pole Three Throw GaAs PHEMT High Power Switch 0.5 - 2.5 GHz FEATURES • • • • • Low Insertion Loss: 0.5 dB at 2GHz Low Voltage Operation 2.8V Low Harmonics 70dBc at +34 dBm Miniature QFN-12 Plastic Package GaAs PHEMT technology 3.0mm x 3.0mm x 0.9mm