QE RB 29 Search Results

BSP61

Abstract: BSP62 BSP50 BSP51 BSP52 BSP60 PNP Transistors
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61 ; BSP62 FEATURES PINNING • High current max. 0.5 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2,4 3 DESCRIPTION base collector emitter APPLICATIONS

Contextual Info: DALLAS SEMICONDUCTOR DS1620R Self-Heating Temperature Sensor FEATURES PIN ASSIGNMENT • Requires no external com ponents DQ • Measures tem peratures from -5 5 °C to +125°C in 0.5°C increments. Fahrenheit equivalent is -6 7 °F to 257°F in 0.9°F increments

RLM01

Abstract: 777C
Contextual Info: <:9/3-3. ?=@=5EFC9 <=;< BAG9C >5E7<=@; C9>5H :LIWXULV ~ @7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE: 0EhgmZ\m\:777C] D^ZkZ[e^ ehZ]\ =777CehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1

Contextual Info: =;:/4-3. @>A>6FGD: =><= CBH:D ?6F8=>A< D:?6I ;MJXYVMW ~ =7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE9 0EhgmZ\m]9<77C^ D^ZkZ[e^ ehZ]A ;<77C ehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power TVansistor The TP3022B is designed for com mon-emitter operation in the 900 MHz m obile radio band. Use of gold m e tallization and silicon diffused ballast resistors results in a m edium power output/driver transistor with state-of-the-art

c559b

Abstract: C560B BC560 cbc560
Contextual Info: BC559, B, C BC560, B, C MAXIMUM RATINGS R ating BC559 BC560 U n it VCEO -3 0 -4 5 V dc C o lle c to r-B a s e V o lta g e V cBO -3 0 -5 0 Vdc E m itte r-B a s e V o lta g e v EBO -5 .0 V dc ic -1 0 0 m Adc Pd 625 5.0 mW C o lle c to r C u rre n t — C o n tin u o u s

mpsh10

Abstract: MPS-H10 MPSH10 s parameters K MPS MPS-H11 MPSH11 GRB 410
Contextual Info: M P S -H IO SILICON M P S - H 11 NPN S ILIC O N V H F / U H F T R A N S IS T O R S N PN S IL IC O N E P IT A X IA L T R A N S IS T O R S . . . designed for use in V H F / U H F applications. comm on base oscillator • High Current-Gain—Bandwidth Product —

MPS6507

Abstract: transistor 911
Contextual Info: MPS6507 SILICON NPN SILICON VH F/U H F AM PLIFIER TRANSISTOR NPN SILICON A N N U LA R V H F/U H F A M PLIFIER TRANSISTOR . . designed for use in V H F /U H F am plifier applications. High Collector Em itter Breakdown Voltage B V c e o “ 20 V d c (Min) @ 1c = 1 -Q m Adc

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

Contextual Info: K m g b rig h t BIN CODE SYSTEMS SELECTION CODE FOR STANDARD LEDS GROUP Light intensity in mcd 10mA min. max. F 0.1 0.2 G 0.2 H SELECTION CODE FOR SUPER BRIGHT LEDS Light intensity in mcd(10mA) GROUP min. max. P 5.0 8.0 0.32 Q 8.0 0.32 0.5 R 1 0.5 0.8 K 0.8

Contextual Info: • Intensity / Wave Length Code Intensity Code for Standard LEDs Code Lu m in ous intensity in m cd 10mA Code min. max. 0.1 0.2 P G 0.2 0.32 H 0.32 0.5 F Colour Code for LEDs and Displays Lum inous intensity in mcd(10mA) Dom. W ave Length (nm) Yel ow Code

Contextual Info: N AUER PHILIPS/DISCRETE bR E bbS3R31 □DE7belb 37fl 3> APX B I-4 0 J BF485 BF487 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-92 envelope and intended fo r use in video output stages in black-and•white and in colour television receivers.

2n1132

Contextual Info: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc

KODAK KAF

Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-1154 November 30, 2009 KODAK KAF-40000 IMAGE SENSOR 7304 H X 5478 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

KAF-22000

Abstract: KAF-22000CE 2N3904 GBC-10 KODAK KAF
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAF-22000CE Image Sensor 4080 H x 5440 (V) Full-Frame CCD Color Image Sensor With Square Pixels for Color Cameras February 4, 2004 Revision 3.0 KAF-22000CE Rev. 3.0 www.kodak.com/go/imagers 585-722-4385

HI2300JCQ

Contextual Info: HI2300 HARRIS S E M I C O N D U C T O R 8-Bit, 18 MSPS, Video A/D Converter with 3.3V Power Supply Operation A ugust 1997 Features Description • Resolution. 8-BK ±V j LSB DL The HI2300 Is an 8-bit, CMOS A/D converter for video with

bc849

Contextual Info: BC846 THRU BC849 Small Signal Transistors NPN FEATURES SOT-23 •122 (3.1) .118 (3.0) 016 (0.4) ♦ NPN Silicon Epitaxial Planar Transistors fo r switching and AF am plifier applications. ♦ Especially suited fo r autom atic insertion in th ick- and thin-film circuits.

d263 schott

Abstract: X1-46 KAF-31600
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-0860 October 10, 2005 KODAK KAF-31600 IMAGE SENSOR 6496 H X 4872 (V) FULL –FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: 1.3 / 1.3 High Power Diplexer PRELIMINARY ODP-33-PA Features • Low cost 1.3/1.3µm FP design • Very low crosstalk typical: 30dB • -40 to 85˚C operation Absolute Maximum Ratings Parameter ESD Rating Operating Temperature Maximum Current Symbol Top

D263T

Abstract: KAF-31600 D-263T 1000X KAF-31600-CX KODAK KAF
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 3.1 MTD/PS-0860 September 1, 2010 KODAK KAF-31600 IMAGE SENSOR 6496 H X 4872 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: r r u u LT1573 m TECHNOLOGY Low D ro p o u t R e gu la to r Driver F€RTUR€S D C S C R IP TIO n • Low Cost Solution for High Current, Low Dropout Regulators ■ Fast Transient Response Needs Much Less Bulk Capacitance ■ Latching Overload Protection Minimizes

Philips FA 564

Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

Contextual Info: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration