QE RB 29 Search Results

Contextual Info: DALLAS SEMICONDUCTOR DS1620R Self-Heating Temperature Sensor FEATURES PIN ASSIGNMENT • Requires no external com ponents DQ • Measures tem peratures from -5 5 °C to +125°C in 0.5°C increments. Fahrenheit equivalent is -6 7 °F to 257°F in 0.9°F increments

Contextual Info: =;:/4-3. @>A>6FGD: =><= CBH:D ?6F8=>A< D:?6I ;MJXYVMW ~ =7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE9 0EhgmZ\m]9<77C^ D^ZkZ[e^ ehZ]A ;<77C ehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1

mpsh10

Abstract: MPS-H10 MPSH10 s parameters K MPS MPS-H11 MPSH11 GRB 410
Contextual Info: M P S -H IO SILICON M P S - H 11 NPN S ILIC O N V H F / U H F T R A N S IS T O R S N PN S IL IC O N E P IT A X IA L T R A N S IS T O R S . . . designed for use in V H F / U H F applications. comm on base oscillator • High Current-Gain—Bandwidth Product —

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

Contextual Info: • Intensity / Wave Length Code Intensity Code for Standard LEDs Code Lu m in ous intensity in m cd 10mA Code min. max. 0.1 0.2 P G 0.2 0.32 H 0.32 0.5 F Colour Code for LEDs and Displays Lum inous intensity in mcd(10mA) Dom. W ave Length (nm) Yel ow Code

Contextual Info: N AUER PHILIPS/DISCRETE bR E bbS3R31 □DE7belb 37fl 3> APX B I-4 0 J BF485 BF487 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-92 envelope and intended fo r use in video output stages in black-and•white and in colour television receivers.

2n1132

Contextual Info: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc

Contextual Info: KAI-08050 IMAGE SENSOR 3296 H X 2472 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 5.1 PS-0011 KAI-08050 Image Sensor TABLE OF CONTENTS Summary Specification . 5

KODAK KAF

Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-1154 November 30, 2009 KODAK KAF-40000 IMAGE SENSOR 7304 H X 5478 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

bc849

Contextual Info: BC846 THRU BC849 Small Signal Transistors NPN FEATURES SOT-23 •122 (3.1) .118 (3.0) 016 (0.4) ♦ NPN Silicon Epitaxial Planar Transistors fo r switching and AF am plifier applications. ♦ Especially suited fo r autom atic insertion in th ick- and thin-film circuits.

Contextual Info: 1.3 / 1.3 High Power Diplexer PRELIMINARY ODP-33-PA Features • Low cost 1.3/1.3µm FP design • Very low crosstalk typical: 30dB • -40 to 85˚C operation Absolute Maximum Ratings Parameter ESD Rating Operating Temperature Maximum Current Symbol Top

Contextual Info: r r u u LT1573 m TECHNOLOGY Low D ro p o u t R e gu la to r Driver F€RTUR€S D C S C R IP TIO n • Low Cost Solution for High Current, Low Dropout Regulators ■ Fast Transient Response Needs Much Less Bulk Capacitance ■ Latching Overload Protection Minimizes

Contextual Info: KAF-40000 IMAGE SENSOR 7304 H X 5478 (V) FULL-FRAME CCD IMAGE SENSOR JUNE 24, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0022 KAF-40000 Image Sensor TABLE OF CONTENTS Summary Specification . 5

SOT23 marking j.1

Abstract: FK 202
Contextual Info: m ro nu PN2907/ A / M M BT2907/ A PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features Epitaxial Planar Die Construction A vailable in both Thru-H ole and Surface M ount Packages Suitable fo r S w itching and A m p lifie r A pplications SOT-23 TO-92 EJ -H fK

MPS6548

Abstract: MPS-6548
Contextual Info: MPS6548 SILICON NPN SILICON VHF/UHF OSCILLATOR TRANSISTOR NPN SILICON ANNULAR VHF/UHF OSCILLATOR TRANSISTOR . . . designed for use in V H F /U H F plications. common-base oscillator ap- High Collector-Emitter Breakdown Voltage — BVcEO = 25 Vdc (Min) @ lc = 1-0 mAdc

MPS5172

Contextual Info: MPS5172 silicon NPN SIL IC O N A N N U L A R NPN SILIC O N A M P L IF IE R T RA N SISTO R T R A N SIST O R . . . designed for general-purpose,low-level amplifier applications. • High D C Current Gain — h p E “ 100 - 500 @ lc = 10 m Adc • Low Collector-Emitter Saturation Voltage —

FR4 epoxy dielectric constant 4.4

Abstract: e/AT-33225-BLK
Contextual Info: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency

Omni-Polar

Contextual Info: TSH248 Micropower Omni-Polar Hall Effect Switch TSOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior hightemperature performance is made possible through a dynamic offset cancellation that utilizes chopperstabilization. This method reduces the offset voltage normally caused by device over-molding, temperature

Contextual Info: KAI-29050 IMAGE SENSOR 6576 H X 4384 (V) INTERLINE CCD IMAGE SENSOR SEPTEMBER 15, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 7.0 PS-0008 KAI-29050 Image Sensor TABLE OF CONTENTS Summary Specification . 5

Contextual Info: KAI-01050 IMAGE SENSOR 1024 H X 1024 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 3.1 PS-0005 KAI-01050 Image Sensor TABLE OF CONTENTS Summary Specification . 5

Contextual Info: 10 0.6 3 .6 _ (A)_ TWA A |0„25 F P C JTA Y EcT INSERTION DEPTH OF FPC 0.5 - I t f ( .7 ) ( P IT C H ) xwwwwww n\\\\\\\\\\\ \ T S A T V tI LENGTH TO CONTACT POINT \ ^ - 1 S A P ( ± B ) _ CONTACT POINT (UPPER SIDE)

Contextual Info: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

Y59 r 120

Contextual Info: N AUER PHILIPS/DISCRETE fe.'lE D bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case, for use in ampli­ fier and switching applications. QUICK REFERENCE DATA