QE RB 29 Search Results

BSP61

Abstract: BSP62 BSP50 BSP51 BSP52 BSP60 PNP Transistors
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61 ; BSP62 FEATURES PINNING • High current max. 0.5 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2,4 3 DESCRIPTION base collector emitter APPLICATIONS

BSM30GP60 INVERTER CIRCUIT

Abstract: BSM30GP60
Contextual Info: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier

Contextual Info: DALLAS SEMICONDUCTOR DS1620R Self-Heating Temperature Sensor FEATURES PIN ASSIGNMENT • Requires no external com ponents DQ • Measures tem peratures from -5 5 °C to +125°C in 0.5°C increments. Fahrenheit equivalent is -6 7 °F to 257°F in 0.9°F increments

RLM01

Abstract: 777C
Contextual Info: <:9/3-3. ?=@=5EFC9 <=;< BAG9C >5E7<=@; C9>5H :LIWXULV ~ @7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE: 0EhgmZ\m\:777C] D^ZkZ[e^ ehZ]\ =777CehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1

c547a

Abstract: C548A C546A C548 HE bc548 BC 548B BC 547 data base BC547 motorola C 547 BC548
Contextual Info: BC546, A, B BC547, A, B, C BC548, A, B, C MAXIMUM RATINGS Rating Sym bol BC BC BC 546 547 548 Unit C o lle c to r- E m itte r V o lta g e VCEO 65 45 30 Vdc C o lle c to r-B a s e V o ita g e VC BO 80 50 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 .0 Vdc C o lle c to r C u rre n t - C o n tin u o u s

Contextual Info: =;:/4-3. @>A>6FGD: =><= CBH:D ?6F8=>A< D:?6I ;MJXYVMW ~ =7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE9 0EhgmZ\m]9<77C^ D^ZkZ[e^ ehZ]A ;<77C ehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1

Contextual Info: DM54ALS645A/DM74ALS645A NATIONAL SENICOND -CLÖGIO IDE D I b s o iia s T -5 S -3 1 □ □ L .t.t.m - F jJP I National /Z/m Semiconductor ÆJm Corporation DM54ALS645A/DM74ALS645A Octal Bus Transceivers General Description Features These octal bus transceivers are designed for asynchro­

BM 1084

Contextual Info: Philips Semiconductors Product specification PNP switching transistor PN2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • Switching and linear amplification. DESCRIPTION

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power TVansistor The TP3022B is designed for com mon-emitter operation in the 900 MHz m obile radio band. Use of gold m e tallization and silicon diffused ballast resistors results in a m edium power output/driver transistor with state-of-the-art

c559b

Abstract: C560B BC560 cbc560
Contextual Info: BC559, B, C BC560, B, C MAXIMUM RATINGS R ating BC559 BC560 U n it VCEO -3 0 -4 5 V dc C o lle c to r-B a s e V o lta g e V cBO -3 0 -5 0 Vdc E m itte r-B a s e V o lta g e v EBO -5 .0 V dc ic -1 0 0 m Adc Pd 625 5.0 mW C o lle c to r C u rre n t — C o n tin u o u s

mpsh10

Abstract: MPS-H10 MPSH10 s parameters K MPS MPS-H11 MPSH11 GRB 410
Contextual Info: M P S -H IO SILICON M P S - H 11 NPN S ILIC O N V H F / U H F T R A N S IS T O R S N PN S IL IC O N E P IT A X IA L T R A N S IS T O R S . . . designed for use in V H F / U H F applications. comm on base oscillator • High Current-Gain—Bandwidth Product —

MPS6507

Abstract: transistor 911
Contextual Info: MPS6507 SILICON NPN SILICON VH F/U H F AM PLIFIER TRANSISTOR NPN SILICON A N N U LA R V H F/U H F A M PLIFIER TRANSISTOR . . designed for use in V H F /U H F am plifier applications. High Collector Em itter Breakdown Voltage B V c e o “ 20 V d c (Min) @ 1c = 1 -Q m Adc

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

Contextual Info: K m g b rig h t BIN CODE SYSTEMS SELECTION CODE FOR STANDARD LEDS GROUP Light intensity in mcd 10mA min. max. F 0.1 0.2 G 0.2 H SELECTION CODE FOR SUPER BRIGHT LEDS Light intensity in mcd(10mA) GROUP min. max. P 5.0 8.0 0.32 Q 8.0 0.32 0.5 R 1 0.5 0.8 K 0.8

Contextual Info: @ CMOS M T8862/3 M IT E L DTMF Decoder FEB. 1985 Features 24 VDD 23 GT 22 St 21 CSESt 20 FL 19 INH Qa 18 17 07 16 06 15 05 14 SEL 13 *EE C/E St 1 2 3 4 5 6 7 8 9 10 11 12 GT 0SC2 0SC1 e c IC C StD <C M C FHC Q lC 02C Q3<= 04C T0EC vssC VDD TOP VIEW -ty - 0SC2

Contextual Info: • Intensity / Wave Length Code Intensity Code for Standard LEDs Code Lu m in ous intensity in m cd 10mA Code min. max. 0.1 0.2 P G 0.2 0.32 H 0.32 0.5 F Colour Code for LEDs and Displays Lum inous intensity in mcd(10mA) Dom. W ave Length (nm) Yel ow Code

BLX97

Abstract: philips Trimmers 60 pf lt 860 IEC134 D0141 s3 vision
Contextual Info: N AUER P HI LI PS/DISCRETE - B 6 D MAINTENANCE TYPE 01860 ObE D D 7" - • bbSBTBl □omD'Jfl 3 7 ? ""*7 ' “ BLX97 U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor prim arily fo r use in linear u.h.f. amplifiers for

Contextual Info: N AUER PHILIPS/DISCRETE bR E bbS3R31 □DE7belb 37fl 3> APX B I-4 0 J BF485 BF487 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-92 envelope and intended fo r use in video output stages in black-and•white and in colour television receivers.

2N3866 MOTOROLA

Abstract: s-parameter 2N3866 motorola 2N3866 2N3866 2n3866a Motorola 2n3866 211 2N3866 equivalent data 2n3866 sm 190 e3055
Contextual Info: MOTOROLA SEM ICO NDUCTOR 2N3866 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 MHz H IG H FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQ UENCY TRANSISTOR NPN SILIC O N . . . designed for a m plifier and oscillator applications in m ilita ry and industrial equipment. Suitable for use as o utp ut, driver or pre-driver

2n1132

Contextual Info: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc

Contextual Info: KAI-08050 IMAGE SENSOR 3296 H X 2472 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 5.1 PS-0011 KAI-08050 Image Sensor TABLE OF CONTENTS Summary Specification . 5

TRANSISTOR C 2577

Abstract: transistor A62
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector

KODAK KAF

Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 2.0 MTD/PS-1154 November 30, 2009 KODAK KAF-40000 IMAGE SENSOR 7304 H X 5478 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4