QD224FL7 Search Results
QD224FL7 Datasheets Context Search
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Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES . End-emitting plastic package • 135° nominal beam angle . 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting |
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SEP8507 SDP8407 SEP8507 QD224fl7 |