QD131 Search Results
QD131 Price and Stock
Siemens 6FX20015QD131AA0 (6FX2001-5QD13-1AA0)DRIVE-CLIQ CLAMP FLANGE 10MM 24 BIT M12 |
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6FX20015QD131AA0 (6FX2001-5QD13-1AA0) | Bulk | 2 | 1 |
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QD131 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK696
Abstract: DL100A Hitachi Scans-001
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OCR Scan |
q013137ta-252sk696dl100a+1 | |
2SK696Contextual Info: 4 ^ 5 0 5 QD13137 TTT • H I T M HITACHI/Í0PT0ELECTR0NICS blE D 2SK696 ~ SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1- Gate 2. Drain F lange ) 3. Source ( Dimensions in mm 5 Low On-Resistance • High Speed Switching • Low Drive Current |
OCR Scan |
q013137ta-25pws102sk696 | |
1186C
Abstract: cxd1135q cxd1130q
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OCR Scan |
cxd1186cq/crcxd1186ccxd1186cq80pln+6 | |
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Contextual Info: 19- 0305 ; Rev 2: 9/95 JVW YXAJSn 5 V I3 .3 V or A djustable, High-Efficiency, Low-Dropout, Step-Down DC-DC Controllers _ G e n e ra l D e s c rip tio n F e a tu re s ♦ More than 90% Efficiency 10mA to 1.5A Loads ♦ More than 12.5W Output Power |
OCR Scan |
1649/m649/maxi300mvdd13144 | |
LZ95G55
Abstract: ccd cmos 84 24128 57415 bcp 846 QFP072-P-1010 LZ2313B5 LZ2313 external VD 13ll
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OCR Scan |
lz95g55ccd cmos 842412857415+6 | |
lt013
Abstract: GG13
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OCR Scan |
ltc1323eia562-compatible16-pin24-pin+4 | |
LS025
Abstract: LS025T l81c
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OCR Scan |
ls025t0-100so-1414-lead+2 | |
MT28F400B3WG-8 tcp 41cContextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0013140 220 »SnfiK KM 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. |
OCR Scan |
41c4000a130ns100ns180ns+6 | |
resistor r22j 11
Abstract: AN647 GRF2i AN6472NFBP SP02 vox switch b3bf
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OCR Scan |
an6472nfbp900mw640mwian6472nfbp+7 | |
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Contextual Info: SAMSUNG ELE CTRONICS INC b4E J> • 7 ^ 4 1 4 2 Q013174 b03 ■ KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory. |
OCR Scan |
q013174km41c4000asl130ns4000asl-+3 | |
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Contextual Info: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M ) |
OCR Scan |
mt8ld264mt16ld464168-pin024-cycle+2 | |
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Contextual Info: UC1907 UC2907 UC3907 IN T E G R A T E D C IR C U IT S y UNITRODE Load Share Controller FEATURES • Fully differential high impedance voltage sensing. • Accurate current amplifier for precise current sharing. • Opto coupler driving capability. • 1.25% trimmed reference |
OCR Scan |
uc1907uc2907uc390788-m7a+1 | |
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Contextual Info: MT4LC1M16H5 1 MEG x 16 BURST EDO DRAM DRAM 1 MEG x 16 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single +3.3V ±5%power supply • All inputs and outputs are LVTTL-compatible with 5V |
OCR Scan |
mt4lc1m16h5024-cycle42-pin | |
AN6474NFBQ
Abstract: D131 QFS064-P-I414 iVOX1
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OCR Scan |
an6474nfbq001317dd131qfs064-p-i414+1 | |
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