Q023B Search Results

2SK2235

Abstract: DDS3400 44t transistor DDS34
Contextual Info: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

2SK2320

Abstract: QK SOT89
Contextual Info: TOSHIBA tì a t17ESD 0 0 2 3 4 2 b T O S H IB A F IE L D EFFECT T R A N S IS T O R 2SK2320 bb 2 S IL IC O N N C H A N N E L M O S T Y P E / r - M O S I I 5 2SK2320 H IG H SPEED , H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , D C -D C C O N V E R T E R A N D M O T O R D R IV E

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

Contextual Info: Integrated Device Technology, Inc. 3.3V 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C3466 ADVANCE INFORMATION FEATURES: DESCRIPTION: • 64-bit wide Flow-thruEDC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 20ns

Contextual Info: P g p GEC PLESSEY S E M I C O N D U C T O R S DS3572-2.3 MA31755 16-BIT FEEDTHROUGH ERROR DETECTION & CORRECTION UNIT EDAC The MA31755 is a 16 bit Error Detection and Correction Unit intended for use in high integrity systems for monitoring and correcting data values retrieved from memory. The EDAC

Contextual Info: TOSHIBA 2SK2319 'ÌG'ITSSG DD234H4 ATT T O S H IB A F IE L D EFFECT T R A N S IS T O R S IL IC O N N C H A N N E L M O S T Y P E tt- M O S I I 5 2SK2319 H IG H SP EED , H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , D C -D C C O N V E R T E R A N D M O T O R D R IV E

Contextual Info: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.

Contextual Info: TO SH IBA cìGcì755G 005333^ 33T T O S H IB A FIELD EFFECT T R A N S IS T O R 2 S K SILIC O N N C H A N N E L M O S T Y P E tt- M O S II -5 1 6 9 2 INDUSTRIAL APPLICATIONS U nit in mm H IG H S P E E D , H IGH C U R R E N T S W IT C H IN G A P P LIC A T IO N S .

Contextual Info: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M

Contextual Info: ¡Ordering number : EN CMOS IC 7 LC895127 I s a ü y o SCSI-lnterface CD-ROM Error Correction IC Preliminary Functions Package Dimensions • CD-ROM ECC function unit: mm • SCSI I/F function • Subcode I/F function 3214-SQFP144 [LC895127] • CAV audio

Contextual Info: OKI semiconductor MSM8 0 C3 1 F/MSM8 0 C5 1 F CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51 F m icrocontroller is a low power, high performance 8-bit single component device implemented in O KI's silicon gate complem entary metaf oxide sem iconductor

DAC7528

Abstract: DAC7528AD DAC7528P DAC7528PB DAC7528U DAC7528UB burr-brown 710
Contextual Info: B U R R - BROW N* DAC7528 CMOS Dual 8-Bit Buffered Multiplying DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • DOUBLE BUFFERED DATA LATCHES The DAC7528 contains two, 8-bit multiplying digitalto-analog converters DACs . Separate on-chip latches hold the input data for each DAC to allow easy inter­

2SK2230

Contextual Info: TO SHIBA 2SK2230 tìD'ì725Q 00233^0 b ñ? T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E tt-M O SIII .5 2SK2230 IN D U S T R IA L A P P L IC A T IO N S U nit in mm HIGH S P E E D , H IGH C U R R EN T S W IT C H IN G A P P L IC A T IO N S

Contextual Info: IDT49C465 IDT49C465A 32-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT Integrated Device Technology, Inc. DESCRIPTION FEATURES 32-bit wide Flow-thruEDC unit, cascadable to 64 bits Single-chip 64-bit Generate Mode Separate system and memory buses On-chip pipeline latch with external control

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible

2SK941

Abstract: transistor 2SK941 za sot89 d3s diode
Contextual Info: T O S H IB A 2SK941 TGTTSSD 0Q2327cì D3S T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E L2-jt - M O S III 2SK941 H IGH S P E E D S W IT C H IN G A P P L IC A T IO N S . R E L A Y D R IV E, M O T O R D R IV E A N D DC-DC C O N V E R T E R A P P L IC A T IO N S .

T75-83

Abstract: L7581 L7583 TR-57 68595 0023L
Contextual Info: m icroelectronics Data Sheet February 1997 group Lucent Technologies Bell Labs Innovations L7583A/B/C/D Line Card Access Switch Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Low impulse noise ■ Make-before-break, break-before-make operation

MRC23

Abstract: URC204 BSP152
Contextual Info: Philips Semiconductors bbS3T31 0023053 IflS IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N A PIER P H I L I P S / D I S C R E T E FEATURES b7E SYMBOL v DS • High-speed switching • No secondary breakdown. N-channel enhancement mode

Contextual Info: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS

BFU310

Abstract: BFU308 BFU309 L7E transistor transistor 309
Contextual Info: ^53131 Philips Semiconductors □□E3bfl4 TT7 APX Preliminary specification N-channel silicon field-effect transistors mi N AHFR FEATURES BFU308/309/310 PHT I T P S / D T S f R F T F L7F D PIN CONFIGURATION • Low noise • Interchangeability of drain and

3s4 MARKING CODE DIODE

Abstract: IRF540NS
Contextual Info: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =

cdm 316

Abstract: CDM6264 CDM6264-3 ca 3161 e IC CDM6264-2 M6264
Contextual Info: HARRIS SEMICOND SECTOR 37E P Random-Access Memories RAM s . H M3G2271 0023b45 1 Bi HAS - T-46-23-12 CDM6264 NC-AI2— AT — A6 — AS-A4-A3 — A2-A1 -AO— 1/01 — 1/02 — 1703-vss— r 2 3 4 5 6 7 8 9 10 II 12 IS 14

2SK2319

Abstract: GD234 44t transistor ud23425
Contextual Info: TOSHIBA 2SK2319 'ÌG'ITSSG DD234H4 ATT T O S H IB A F IE L D EFFECT T R A N S IS T O R S IL IC O N N C H A N N E L M O S T Y P E tt- M O S I I 5 2SK2319 H IG H SP EED , H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , D C -D C C O N V E R T E R A N D M O T O R D R IV E

K1643

Abstract: 2SK1643 transistor 2S D 716 2-10P1B DDS333S FRL 714
Contextual Info: T O S H IB A m ^0^75^0 0D5333M &S& • _ 2SK1643 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL M O S TYPE ,t -M O SII -5 1 6 4 3 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS.