PZTA43 Search Results

93 sot223 marking

Abstract: 93 MARKING
Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: PZTA 42, PZTA43 NPN Type Marking Ordering Code (tape and reel) Pin Coni igural ion 2 1 3 4 Package1)

Contextual Info: bbSB'IBl OOBbOlH ^ST * A P X N AUER PHILIPS/DISCRETE b?E J> yv PZTA42 PZTA43 SILICON EPITAXIAL TRAN SISTO RS NPN transistors in a microminiature SMD envelope SOT-223 . They are primarily intended for use in telephony and professional communication equipment.

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES PZTA42; PZTA43 PINNING • Low current max, 100 mA PIN • High voltage (max. 300 V). 1 DESCRIPTION base 2,4 APPLICATIONS collector emitter 3 • Telephony and professional communication equipment.

PZTA42

Abstract: PZTA43
Contextual Info: UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. 2 1 FEATURES 3 *Collector-Emitter voltage: VCEO=300V UTC PZTA42 VCEO=200V(UTC PZTA43)

P2TA42

Abstract: p2t* smd smd transistors 458
Contextual Info: PZTA42 PZTA43 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON EPITAXIAL TRANSISTORS NPN transistors in a microm iniature SMD package SOT-223 . They are prim arily intended fo r use in telephony and professional com munication equipment.

Contextual Info: PZTA43T1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: PZTA43T3 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. 1 FEATURES 2 3 *Collector-Emitter voltage: VCEO=300V UTC PZTA42 VCEO=200V(UTC PZTA43)

Contextual Info: PZTA42 PZTA43 SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature SMD package SOT-223 . They are prim arily intended for use in telephony and professional communication equipment. QUICK REFERENCE D A T A Collector-base voltage (open emitter)

Contextual Info: PZTA43 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

PZTA42

Abstract: PZTA43
Contextual Info: •i bbsa^ai a o E b a m ^s t « a p x N AMER PHILIPS/DISCRETE PZTA42 PZTA43 b7E D SILICON EPITAXIAL TRANSISTORS NPN transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA42; PZTA43 NPN high-voltage transistors Product specification Supersedes data of October 1993 File under Discrete Semiconductors, SC04 1997 Jun 16 Philips Semiconductors Product specification NPN high-voltage transistors

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: PZTA 92, PZTA 93 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1)

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • ^53*131 a01b341 3 ■ Surface Mount Devices LOW-NOISE TRANSISTORS NF hFE t y p .a t lc dB pA mln/max* at I c ^ C E mA/V RATINGS TYPE P ACK A G E VCEO V Vc b O V •c mA : VCE sat max. at lc % V mA/mA h typ. MHZ PINOUT 5 SEE

PMBT5086

Abstract: PMBT5089 PMBT5087 BC849B BC849C BC850B BC850C BCF32 BCF33 BCF81
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^ 5 3 ^ 3 1 ODlbSMl 3 ■ T - ’3.'7~'Qi Surface Mount Devices LOW-NOISE TRANSISTORS TYPE NF RATINGS PACKAGE VCEO V VcBO V mA •c : *»FE VCE sat t y p .a t lc dB pA min/max. at Iq /Vc e ; mA/V - max. at lc % V mA/mA PINOUT ?

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

p2d smd

Abstract: smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d SOT-23 MARKING T36 sot-89 marking H3 transistors sot-23 "Marking code 26" P2D SOT223 H3 SOT-89
Contextual Info: High Voltage S M D ' Transistors 11 High Voltage SMD Transistors Description Mechanical Data Philips Components produces a variety of chip geometries in order to offer high voltage transistors with a broad range of current handling capabilities. The result is a device which not

TYP 513 309

Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Contextual Info: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250

6CW 62

Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A