PULSE50 Search Results

AN602

Abstract: ca capacitor IRD2 GD Rectifiers 500C BYV255 VT25 diode gp SRD12 St gp 04s
Contextual Info: AN602 APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE INTRODUCTION The behavior of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing between diodes connected in parallel. The current in each

SRD12

Abstract: 500C BYV255
Contextual Info:  APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE B. Rivet I - INTRODUCTION Fig.1 : Electrical and thermal models of a diode The behaviour of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing

220S2

Abstract: 220 ohm resistor GA100 GA101 GA102
Contextual Info: GAI 00 GA 101 GA102 SCRs Nuclear Radiation Resistant, Planar FE A T U R E S D ESCR IP TIO N • Optimized for Radiation Resistance • Fully Characterized for “Worst Case” Design • Post Radiation Design Lim its Specified • Passivated Planar Construction for

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

GA101

Abstract: to30A 220O GA100 GA102
Contextual Info: GAI 00 GA101 GA102 SCRs Nuclear Radiation Resistant, Planar FEATURES DESCRIPTION • Optimized for Radiation Resistance • Fully Characterized for “Worst Case” Design • Post Radiation Design Lim its Specified • Passivated Planar Construction for Maximum Reliability and Parameter

st GK 12

Abstract: BY2202
Contextual Info: SCRs G A IO O Nuclear Radiation Resistant, Planar G A 1 0 2 FEATURES • Optimized for Radiation Resistance • Ful ly Characterized for “Worst Case" Design • Post Radiation Design Limits Specified • Passivated Planar Construction for Maximum Reliability and Parameter

MB12-140

Abstract: dm445 1009C
Contextual Info: FUJI 1GBT S P E C I F I C A T I O N TYPE NAME : ¿MB12-140 1. Absolute maximum ratings Tc=25‘C Items Symbols maximum ratings Unit VcE 1400 V Gate-Eraitter Voltag e V ge V Continuos 1c 12 A Pulse-50/fS I CP 60 A Power Dissipation +1 C ollector Current

1mbh60-100

Abstract: Ir 900v 60a 000M4S3 QQD4451 MIM 205 S2371 MA 75816
Contextual Info: r 1. Absolute maximum ratings Tc=25*C I terns . Symbols Collector-Emitter Voltage Gate-Emitter Voltage Co11ec tor Curren t , Continuos Ratings Units Vces 1000 V Vg e s ±20 V 60 A 180 A Ic Pulse-50^s Ic pulse Max.Power Dissipation Pc 260 Operating Temperature

Contextual Info: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 'JMB12-140 1. Absolute maximum r a t i n g s Tc=25*C Items Symbols maximum r a t i n g s Unit C o l l e c t o r - E m i t t e r Voltage VC E 1400 V Gate-Emi tt er Voltage Vge ± 20 V Continuos 1c 12 A Pulse-50/fS

Contextual Info: GAIOO GA101 GA102 SCRs Nuclear Radiation Resistant, Planar FEA TU R ES DESCRIPTION • Optimized for Radiation Resistance • Fully Characterized for “Worst Case" Design • Post Radiation Design Limits Specified • Passivated Planar Construction for Maximum Reliability and Parameter

IGBT 1MBH60-100

Abstract: 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT
Contextual Info: Ratings and ch aracteristics of Fuji IGBT 1 M B H 6 1. Absolute maximum ratings 0 — 1 O O Tc=25*C I terns Symbols Ratings Units Col lector-Em itter Voltage Vces 1000 V Gate-Emitter Voltage Vces ±20 V 60 A 180 A 260 W + 150 *C Continuos Ic C ollector Current